Abstract:The rapid development of optical technologies and applications revealed the critical role of point defects affecting device performance. One of the powerful tools to study influence of defects on charge capture and recombination processes is thermoluminescence. The popular models behind thermoluminescence and carrier capture processes are semi-classic though. They offer good qualitative description, but implicitly exclude quantum nature of the accompanying parameters, such as frequency factors and capture cross sections. As a consequence, results obtained for a specific host material cannot be successfully extrapolated to other materials. Thus, the main purpose of our work is to introduce a reliable analytical model that describes non-radiative capture and release of electrons from/to the conduction band (CB). The proposed model is governed by Bose-Einstein statistics (for phonon occupation) and Fermi's golden rule (for resonant charge transfer between the trap and the CB). The constructed model offers a physical interpretation of the capture coefficients and frequency factors, and seamlessly includes the Coulomb neutral/attractive nature of traps. It connects the frequency factor to the overlap of wavefunctions of the delocalized CB and trap states, and suggests a strong dependence on the density of charge distribution, i.e. the ionicity/covalency of the chemical bonds within the host. Separation of the resonance condition from the accumulation/dissipation of phonons on the site leads to the conclusion that the capture cross-section does not necessarily depend on the trap depth. The model is verified by comparison to reported experimental data, showing good agreement. As such, the model generates reliable information about trap states whose exact nature is not completely understood and allows to do materials research in a more systematic way.

Detection of Single Charge Trapping Defects in Semiconductor Particles by Evaluating Photon Antibunching in Delayed Photoluminescence

Direct Probing of Gap States and Their Passivation in Halide Perovskites by High-Sensitivity, Variable Energy Ultraviolet Photoelectron Spectroscopy

Charge Conversion Of Nearly Free And Impurity Bound Magneto-Trions Immersed In 2d Electron Or Hole Gas With Optically Tunable Concentration

Lack of Photon Antibunching Supports Supertrap Model of Photoluminescence Blinking in Perovskite Sub‐Micrometer Crystals

Heterogeneities and Emissive Defects in MAPbI 3 Perovskite Revealed by Spectrally Resolved Luminescence Blinking

Photoluminescence Mapping over Laser Pulse Fluence and Repetition Rate as a Fingerprint of Charge and Defect Dynamics in Perovskites

Presence of Maximal Characteristic Time in Photoluminescence Blinking of MAPbI 3 Perovskite

Differentiation between shallow and deep charge trap states on single poly(3-hexylthiophene) chains through fluorescence photon statistics

Charge Trapping Dynamics in PbS Colloidal Quantum Dot Photovoltaic Devices

Luminescence Patterns on Multimillimeter Single-Crystal MAPbBr 3 Microplatelets via Thermal Ablation Effects

Influence of shallow traps on the kinetics of Optically Stimulated Luminescence of the Li and Ce ions co-doped MgB 4 O 7 compound

Mobile defects as mediated states for charge-carrier trapping in metal halide perovskites quantum dots

Single charge and exciton dynamics probed by molecular-scale-induced electroluminescence

A quantum model of charge capture and release onto/from deep traps

Dynamics of Photoinduced Charge Carriers in Metal-Halide Perovskites

Simultaneous Photoluminescence and Photothermal Investigation of Individual CH 3 NH 3 PbBr 3 Microcrystals

Deciphering the Effect of Traps on Electronic Charge Transport Properties of Methylammonium Lead Tribromide

Kinetic modulation-eliminated precursor liquid inclusions in solution-grown CsPbBr3 bulk crystals for gamma-ray detection

Competition between auger recombination and hot-carrier trapping in PL intensity fluctuations of type II nanocrystals

The Principle of Adaptive Excitation for Photoluminescence Imaging of Silicon: Theory

The Role of Surface Defects in Photoluminescence and Decay Dynamics of High-Quality Perovskite MAPbI3 Single Crystals.