Abstract:Strain engineering offers unique control to manipulate the electronic band structure of two-dimensional materials (2DMs) resulting in an effective and continuous tuning of the physical properties. Ad-hoc straining 2D materials has demonstrated novel devices including efficient photodetectors at telecommunication frequencies, enhanced-mobility transistors, and on-chip single photon source, for example. However, in order to gain insights into the underlying mechanism required to enhance the performance of the next-generation devices with strain(op)tronics, it is imperative to understand the nano- and microscopic properties as a function of a strong non-homogeneous strain. Here, we study the strain-induced variation of local conductivity of a few-layer transition-metal-dichalcogenide using a conductive atomic force microscopy. We report a novel strain characterization technique by capturing the electrical conductivity variations induced by local strain originating from surface topography at the nanoscale, which allows overcoming limitations of existing optical spectroscopy techniques. We show that the conductivity variations parallel the strain deviations across the geometry predicted by molecular dynamics simulation. These results substantiate a variation of the effective mass and surface charge density by .026 me/% and .03e/% of uniaxial strain, respectively. Furthermore, we show and quantify how a gradual reduction of the conduction band minima as a function of tensile strain explains the observed reduced effective Schottky barrier height. Such spatially-textured electronic behavior via surface topography induced strain variations in atomistic-layered materials at the nanoscale opens up new opportunities to control fundamental material properties and offers a myriad of design and functional device possibilities for electronics, nanophotonics, flextronics, or smart cloths.

Understanding the Impact of Contact-Induced Strain on the Electrical Performance of Monolayer WS2 Transistors

Understanding the Impact of Contact-Induced Strain on the Electrical Performance of Monolayer WS 2 Transistors

CMOS-compatible Strain Engineering for High-Performance Monolayer Semiconductor Transistors

Contact Optimisation Strategy for Wafer-Scale Field-Effect Transistors Based on Two-Dimensional Semiconductors

Strain Induced Modulation of Local Transport of 2D Materials at the Nanoscale

Distinct contact scaling effects in MoS2 Transistors revealed with asymmetrical contact measurements

Tailoring the Electronic, Mechanical, and Carrier Transport Properties of 1t‐sns2 Monolayer Via Strain Engineering: A First-Principles Study

Tailoring the electronic, mechanical, and carrier transport properties of 1T‐SnS 2 monolayer via strain engineering: A first-principles study

Biaxial Strain Transfer in Monolayer MoS2 and WSe2 Transistor Structures

Biaxial Tensile Strain Enhances Electron Mobility of Monolayer Transition Metal Dichalcogenides

Influences of Contact Metals on the Performances of MoS2 Devices under Strains

Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts

Improving Electric Contacts to Two-Dimensional Semiconductors

The Effect of the Pre-Strain Process on the Strain Engineering of Two-Dimensional Materials and Their van der Waals Heterostructures

Designing Efficient Metal Contacts to Two-Dimensional Semiconductors MoSi$_2$N$_4$ and WSi$_2$N$_4$ Monolayers

One-dimensional semimetal contacts to two-dimensional semiconductors

Strain Controls Charge Carrier Lifetimes in Monolayer WSe2: Ab Initio Time Domain Analysis

Strain-engineering the Anisotropic Electrical Conductance in ReS2 Monolayer

Strain-engineered growth of two-dimensional materials

Mechanical tensile behavior-induced multi-level electronic transport of ultra-thin SiC NWs

Scaled contact length with low contact resistance in monolayer 2D channel transistors.