Exploring the impact of elevated pressure on the structural dynamics of TlInS 2 crystal (I): A first-principles investigation with XRD, Raman, and Hirshfeld topology

Z.Y. Khattari,Saleem I. Qashou
DOI: https://doi.org/10.1016/j.mtcomm.2024.110707
IF: 3.8
2024-11-02
Materials Today Communications
Abstract:The structural dynamics of Thallium Indium Disulfide (TlInS 2 ) crystal under elevated pressures were comprehensively investigated using a combination of X-ray diffraction (XRD), Raman spectroscopy via first-principles calculations, and Hirshfeld surface (HS) analysis. This study aims to elucidate pressure-induced modifications in the crystal structure and their associated properties of TlInS 2 crystal. The findings reveal significant structural transformations as pressure increases, with XRD patterns indicating lattice compression and a critical transition from semiconductor to conductor at pressure P=6.25 GPa [42]. The calculations predict a reduction in bond lengths, specifically S1-In1 and S1-Tl2, alongside a corresponding decrease in lattice parameters and unit cell volume. Raman spectroscopy corroborates these changes through shifts in phonon modes. The HS analysis provides further insights into pressure-dependent alterations in intermolecular interactions, revealing changes in voids and surface characteristics. The data gained from TlInS 2 's structural behavior under pressure, contributing to the optimization of its functional properties for pressure-tunable applications in high-performance electronic and optoelectronic devices.
materials science, multidisciplinary
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