Abstract:We perform a systematic theoretical analysis of the nature and importance of alloy disorder effects on the electronic and optical properties of GaN$_{y}$As$_{1-x-y}$Bi$_{x}$ alloys and quantum wells (QWs), using large-scale atomistic supercell electronic structure calculations based on the tight-binding method. Using ordered alloy supercell calculations we also derive and parametrise an extended basis 14-band \textbf{k}$\cdot$\textbf{p} Hamiltonian for GaN$_{y}$As$_{1-x-y}$Bi$_{x}$. Comparison of the results of these models highlights the role played by short-range alloy disorder -- associated with substitutional nitrogen (N) and bismuth (Bi) incorporation -- in determining the details of the electronic and optical properties. Systematic analysis of large alloy supercells reveals that the respective impact of N and Bi on the band structure remain largely independent, a robust conclusion we find to be valid even in the presence of significant alloy disorder where N and Bi atoms share common Ga nearest neighbours. Our calculations reveal that N- (Bi-) related alloy disorder strongly influences the conduction (valence) band edge states, leading in QWs to strong carrier localisation, as well as inhomogeneous broadening and modification of the conventional selection rules for optical transitions. Our analysis provides detailed insight into key properties and trends in this unusual material system, and enables quantitative evaluation of the potential of GaN$_{y}$As$_{1-x-y}$Bi$_{x}$ alloys for applications in photonic and photovoltaic devices.

Modeling Bi-induced changes in the electronic structure of GaAs 1-xBix alloys

Configuration dependence of band-gap narrowing and localization in dilute GaAs 1 -x Bi x alloys

First-principles Study of the Effect of BiGa Heteroantisites in GaAs:Bi Alloy

12-band $\textbf{k}\cdot\textbf{p}$ model for dilute bismide alloys of (In)GaAs derived from supercell calculations

First-principles Calculations of Band-Gap Properties of Zinc-Blende B X Ga 1-X N and B X Ga 1-X N Y As 1-Y Alloys

Valence band-anticrossing in GaP$_{1-x}$Bi$_{x}$ dilute bismide alloys: giant bowing of the band gap and spin-orbit splitting energy

Ordering in GaAs co-doped with Bi and N

Band-gap reduction and band alignments of dilute bismide III--V alloys

Bismuth-induced band-tail states in GaAsBi probed by photoluminescence

Electronic properties of Bi-doped GaAs(001) semiconductors.

Impact of disorder on the optoelectronic properties of GaN$_y$As$_{1-x-y}$Bi$_x$ alloys and heterostructures

Incorporation of random alloy GaBi$_{x}$As$_{1-x}$ barriers in InAs quantum dot molecules: alloy strain and orbital effects towards enhanced tunneling

Influence of non-stoichiometry and local atomic environments on carrier transport in GaAs1 − x − yNxBiy alloys

Optical transitions in new semiconductor alloy GaAs/sub 1-x/Bi/sub x/ with temperature-insensitive band gap

The roles of Bi in InAs and InAsBi nanostructure growth

A Model for the Bandgap Energy of the Dilute Nitride Inganas Alloys by Modifying Simplified Coherent Potential Approximation

Electronic properties of metamorphic GaSbBi films on GaAs

Influence of Bi doping on the electronic structure of (Ga,Mn)As epitaxial layers

Theory of band gap bowing of disordered substitutional II-VI and III-V semiconductor alloys

Epitaxial phases of high Bi content GaSbBi alloys

Electronic properties of InBixP1-x alloy in the P-rich range calculated using first-principles calculations