Defect Engineering in Ultrathin SnSe Nanosheets for High-Performance Optoelectronic Applications
Feng Li,Hualong Chen,Lei Xu,Feng Zhang,Peng Yin,Tingqiang Yang,Tao Shen,Junjie Qi,Yupeng Zhang,Delong Li,Yanqi Ge,Han Zhang
DOI: https://doi.org/10.1021/acsami.1c05254
2021-07-08
Abstract:Ultrathin lamellar SnSe is highly attractive for applications in areas such as photonics, photodetectors, photovoltaic devices, and photocatalysis, owing to its suitable band gap, exceptional light absorption capabilities, and considerable carrier mobility. On the other hand, SnSe nanosheets (NSs) still face challenges of being difficult to prepare and their devices having low photoelectric conversion efficiencies. Herein, ultrathin SnSe NSs with controlled Se defects were synthesized with high yield by a facial Li intercalation-assisted liquid exfoliation method. The loss of Se, a narrowing of the band gap, and an increase in lattice disorders involving vacancies, distortions, and phase transition were observed in SnSe NSs prepared with a long lithiation process. Comparing between the 24 and 72 h lithiation samples, the ones processed for a longer time displayed a faster recombination time due to more defect-induced mid-states. Inspiringly, enhancements of 4–10 times were observed for photodetector device parameters such as photocurrent, photoresponsivity, photoresponse speed, and specific detectivity of the 72 h lithiation SnSe NSs. Additionally, these devices show good stability and a broad detection range, from ultraviolet to the near infrared region. Our results provide a promising avenue for the mass production of SnSe NSs with high photoelectric performance and open up opportunities for applications in photonics, optoelectronics, and photocatalysis.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c05254?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c05254</a>.SEM image and the corresponding EDS spectra of SnSe NSs; AFM images of SnSe NSs; low-magnification TEM image of SnSe NSs; STEM image and the corresponding EDS results of SnSe NSs; HRTEM image and SAED pattern; HAADF–STEM and ABF–STEM images of SnSe NSs; 2D TA color-coded map and the kinetic curve; photoresponse <i>I</i>–<i>t</i> curves of SnSe devices; <i>I</i>–<i>t</i> curves under different light powers; light power intensity dependent on photocurrent and detectivity of the SnSe device; <i>I</i>–<i>t</i> curves under different incident light wavelengths; light wavelength dependent on photocurrent and detectivity of the SnSe device; long-term stability test; photoresponse performance of the 0 h lithiation SnSe NSs; and photoresponse <i>I</i>–<i>t</i> curves measured in the 1 M NaOH electrolyte (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c05254/suppl_file/am1c05254_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,nanoscience & nanotechnology