Amino acid interrelationships in avian nutrition. Introduction.

D. Polin

1976-06-01

Abstract:

What problem does this paper attempt to address?

Magnetization reversal in Fe(001) films grown by magnetic field assisted molecular beam epitaxy

B. Blyzniuk,A. Dziwoki,K. Freindl,A. Kozioł-Rachwał,E. Madej,E. Młyńczak,M. Szpytma,D. Wilgocka-Ślezak,J. Korecki,N. Spiridis

DOI: https://doi.org/10.1016/j.jmmm.2023.171151

2023-09-07

Abstract:We studied the influence of a magnetic field (MF) on epitaxial growth and magnetic properties of Fe(001) films deposited on MgO(001). Thanks to modular sample holders and a specialized manipulator in our multi-chamber ultrahigh vacuum system, the films could be deposited and annealed in an in-plane MF of 100 mT. In situ scanning tunnelling microscopy showed that MF had a strong influence on the film morphology, and, in particular, on the structure of surface steps. The magnetic properties were studied ex situ using magneto-optic Kerr effect (MOKE) magnetometry and microscopy. We showed that the moderate in-plane magnetic field applied during growth has the visible impact on the magnetic properties. The observed angular dependence of the MOKE loops and domain structures were discussed based on a magnetization reversal model. In particular we found that magnetization reversal occurs via 90° domains and the reversal differs for the no-field and in-field grown samples, in correlation with the film morphology.

Materials Science
Magnetization States in Epitaxial Thin Films Subjected to Misfit Strains and Demagnetization Field

Junqing Yuan,Jie Wang

DOI: https://doi.org/10.1016/j.physb.2014.09.042

2015-01-01

Abstract:The effect of non-equally biaxial in-plane misfit strains and demagnetization field on the magnetization states of ferromagnetic thin films is analytically investigated by using a nonlinear thermodynamic theory. The “misfit strain–misfit strain” phase diagrams of the magnetization states at room temperature for α-Fe and CoFe2O4 thin films epitaxially grown on tetragonal substrates are developed by minimizing the total free energy. For a cubic ferromagnetic thin film, an out-of-plane magnetization state exists in the region of tensile misfit strains if the magnetostrictive coefficient of λ100 is negative and the demagnetization field is small, whereas the out-of-plane magnetization vanishes in the whole region of misfit strains when the demagnetization field is large.
Applications of Molecular Beam Epitaxy in optoelectronic devices: An overview

Wagma Hidayat,Muhammad Usman

DOI: https://doi.org/10.1088/1402-4896/ad8318

2024-10-04

Physica Scripta

Abstract:Molecular Beam Epitaxy (MBE) is a crystal growth technique used to manufacture ultra-thin semiconducting layers with nearly flawless control over layer their compositions, dimensions, and doping concentrations. Initially, this growth technique has been extensively employed to III-V semiconducting alloys. MBE has found widespread application in the growth of semiconducting compounds (i.e., silicon, germanium, II-VI, IV-VI), dielectrics, epitaxial metallic films, as well as superconducting materials. For a comprehensive overview of MBE, in this work, we will first go over some of the fundamentals of MBE, followed by its brief history, and its significance in the production of various electronic and optoelectronic devices, including light-emitting diodes (LEDs), laser diodes (LDs) photodiodes/photodetectors, and solar cells.

physics, multidisciplinary
Epitaxial Multiferroic Heterostructures And Applications

Mingmin Zhu,Tianxiang Nan,Bin Peng,Yijun Zhang,Ziyao Zhou,Xi Yang,Wei Ren,Nian X. Sun,Ming Liu

DOI: https://doi.org/10.1109/TMAG.2017.2739111

IF: 1.848

2017-01-01

IEEE Transactions on Magnetics

Abstract:The ever increasing demand for ultralow power electronics has propelled the exploration of novel multiferroics for realizing voltage control of magnetism in an energy efficient manner. Epitaxial multiferroic heterostructures, possessing a strong latticecoupled mechanical interface and allowing an electric field (E-field) significantly modulating spin, charge, lattice, and orbital order parameters, have drawn much attention for creating novel magnetoelectric (ME) coupling effects. In this paper, we review the recent progress on control of ME properties in epitaxial multiferroic heterostructures, including their novel physical properties, various strong interfacial ME interactions, and potential applications. Meanwhile, the essential interfacial couplings, allowing cross-tuning of lattice and charge-coupled parameters, have been extensively reviewed. Electric tuning of magnetism in epitaxial multiferroic heterostructures provides a great platform to develop lightweight, compact, and energy-efficient spintronic or electronic devices.
Electric field manipulation of magnetization in an insulating dilute ferromagnet through piezoelectromagnetic coupling

D. Sztenkiel,K. Gas,N. Gonzalez Szwacki,M. Foltyn,C. Sliwa,T. Wojciechowski,J. Z. Domagala,D. Hommel,M. Sawicki,T. Dietl

2024-06-19

Abstract:We report magnetization changes generated by an electric field in ferromagnetic Ga$_{1-x}$Mn$_x$N grown by molecular beam epitaxy. Two classes of phenomena have been revealed. First, over a wide range of magnetic fields, the magnetoelectric signal is odd in the electric field and reversible. Employing a macroscopic spin model and atomistic Landau-Lifshitz-Gilbert theory with Langevin dynamics, we demonstrate that the magnetoelectric response results from the inverse piezoelectric effect that changes the trigonal single-ion magnetocrystalline anisotropy. Second, in the metastable regime of ferromagnetic hystereses, the magnetoelectric effect becomes non-linear and irreversible in response to a time-dependent electric field, which can reorient the magnetization direction. Interestingly, our observations are similar to those reported for another dilute ferromagnetic semiconductor Cr$_x$(Bi$_{1-y}$Sb$_y$)$_{1-x}$Te$_3$, in which magnetization was monitored as a function of the gate electric field. Those results constitute experimental support for theories describing the effects of time-dependent perturbation upon glasses far from thermal equilibrium in terms of an enhanced effective temperature.

Materials Science
Crafting the strain state in epitaxial thin films: A case study of CoFe2O4 films on Pb(Mg,Nb)O3-PbTiO3

Zhiguang Wang,Yaojin Wang,Haosu Luo,Jiefang Li,D. Viehland

DOI: https://doi.org/10.1103/PhysRevB.90.134103

2014-07-27

Abstract:The strain dependence of electric and magnetic properties has been widely investigated, both from a fundamental science perspective and an applications point of view. Electromechanical coupling through field-induced polarization rotation (PRO) and polarization reorientation (PRE) in piezoelectric single crystals can provide an effective strain in film/substrate epitaxial heterostructures. However, the specific pathway of PRO and PRE is a complex thermodynamic process, depending on chemical composition, temperature, electric field and mechanical load. Here, systematic studies of the temperature-dependent field-induced phase transitions in Pb(Mg,Nb)O3-PbTiO3 single crystals with different initial phase and orientation configurations have been performed. Different types of strains, volatile/nonvolatile and biaxial/uniaxial, have been measured by both macroscopic and in-situ X-ray diffraction techniques. In addition, the strain state of epitaxial Mn-doped CoFe2O4 thin films was examined by magnetic anisotropy measurements, where a giant magnetoelectric coupling has been demonstrated.

Materials Science
Development of in situ characterization techniques in molecular beam epitaxy

Chao Shen,Wenkang Zhan,Manyang Li,Zhenyu Sun,Jian Tang,Zhaofeng Wu,Chi Xu,Bo Xu,Chao Zhao,Zhanguo Wang

DOI: https://doi.org/10.1088/1674-4926/45/3/031301

2024-03-13

Journal of Semiconductors

Abstract:Ex situ characterization techniques in molecular beam epitaxy (MBE) have inherent limitations, such as being prone to sample contamination and unstable surfaces during sample transfer from the MBE chamber. In recent years, the need for improved accuracy and reliability in measurement has driven the increasing adoption of in situ characterization techniques. These techniques, such as reflection high-energy electron diffraction, scanning tunneling microscopy, and X-ray photoelectron spectroscopy, allow direct observation of film growth processes in real time without exposing the sample to air, hence offering insights into the growth mechanisms of epitaxial films with controlled properties. By combining multiple in situ characterization techniques with MBE, researchers can better understand film growth processes, realizing novel materials with customized properties and extensive applications. This review aims to overview the benefits and achievements of in situ characterization techniques in MBE and their applications for material science research. In addition, through further analysis of these techniques regarding their challenges and potential solutions, particularly highlighting the assistance of machine learning to correlate in situ characterization with other material information, we hope to provide a guideline for future efforts in the development of novel monitoring and control schemes for MBE growth processes with improved material properties.

physics, condensed matter
Engineering magnetic anisotropy and the surface of epitaxial Fe films using ion beam erosion; unveiling self-assembly and tunability

Anup Kumar Bera,Md. Shahid Jamal,Avinash Ganesh Khanderao,Dileep Kumar

2023-06-20

Abstract:The engineering of surface morphology and structure of the thin film is one of the essential technological assets for regulating the physical properties and functionalities of thin film-based devices. This study investigates the evolution of surface structure and magnetic anisotropy in epitaxially grown ultrathin Fe films on MgO (001) substrates subjected to multiple cycles of ion beam erosion (IBE) after growth. Ultrathin Fe film grows in 3D island mode and exhibits intrinsic fourfold magnetic anisotropy. After a few cycles of IBE, the film displays an induced uniaxial magnetic anisotropy that leads to a split in the hysteresis loop. In addition, clear and conclusive evidence of IBE mediated (2x2) reconstruction of the Fe surface has been observed. We also demonstrate that thermal annealing can reversibly tune the induced UMA and surface reconstruction. The feasibility of the IBE technique by properly selecting ion beam parameters for modification of surface structure has been highlighted apart from conventional methods of tailoring the morphology for tuning of UMA. Thus, the present work paves a way to explore the IBE-induced self-assembling phenomena further.

Materials Science
Electric Field Control of the Magnetization Dynamics of Ferromagnetic/Ferroelectric Multiferroic Heterostructure.

L. Xie,T. Nan,Z. Hu,X. Wang,Y. Gao,X. Chen,M. Liu,N. Sun

DOI: https://doi.org/10.1109/intmag.2015.7156526

2015-01-01

Abstract:Multiferroic heterostrcture composed of ferromagnetic and ferroelectric phase has recently attracted ever-increasing amount of interest due to its strong magnetoelectric coupling at room temperature [1-3]. In particular, the strain-mediated magnetoelectric (ME) coupling arising from the combined piezoelectric and magnetoelastic effect has shown a large modification of the magnetic anisotropy of the ferromagnetic layer by the application of electric field. This enables various applications including low power spintronics, voltage tunable microwave devices, magnetic sensors and etc [4, 5].
Mapping strain modulated electronic structure perturbations in mixed phase bismuth ferrite thin films

p s sankara rama krishnan,j a aguiar,quentin m ramasse,d m kepaptsoglou,w i liang,y h chu,nigel d browning,p r munroe,valanoor nagarajan

DOI: https://doi.org/10.1039/c4tc02064b

IF: 6.4

2015-01-01

Journal of Materials Chemistry C

Abstract:Strain engineering of epitaxial ferroelectrics has emerged as a powerful method to tailor the electromechanical response of these materials, although the effect of strain at the atomic scale and the interplay between lattice displacements and electronic structure changes are not yet fully understood. Here, using a combination of scanning transmission electron microscopy (STEM) and density functional theory (DFT), we systematically probe the role of epitaxial strain in mixed phase bismuth ferrite thin films. Electron energy loss O K and Fe L-2,L-3 edge spectra acquired across the rhombohedral (R)-tetragonal (T) phase boundary reveal progressive, and systematic, changes in electronic structure going from one phase to the other. The comparison of the acquired spectra with theoretical simulations using DFT suggests a breakage in the structural symmetry across the boundary due to the simultaneous presence of increasing epitaxial strain and off-axial symmetry in the T phase. This implies that the imposed epitaxial strain plays a significant role in not only changing the crystal-field geometry, but also the bonding environment surrounding the central iron cation at the interface thus providing new insights and a possible link to understand how the imposed strain could perturb magnetic ordering in the T phase BFO.
Non-destructive mapping of long-range dislocation strain fields in an epitaxial complex metal oxide.

Hugh Simons,Anders Clemen Jakobsen,Sonja Rosenlund Ahl,Henning Friis Poulsen,Wolfgang Pantleon,Ying-Hao Chu,Carsten Detlefs,Nagarajan Valanoor

DOI: https://doi.org/10.1021/acs.nanolett.8b03839

IF: 10.8

2019-01-01

Nano Letters

Abstract:The misfit dislocations formed at heteroepitaxial interfaces create long-ranging strain fields in addition to the epitaxial strain. For systems with strong lattice coupling, such as ferroic oxides, this results in unpredictable and potentially debilitating functionality and device performance. In this work, we use dark-field X-ray microscopy to map the lattice distortions around misfit dislocations in an epitaxial film of bismuth ferrite (BiFeO3), a well-known multiferroic. We demonstrate the ability to precisely quantify weak, long-ranging strain fields and their associated symmetry lowering without modifying the mechanical state of the film. We isolate the screw and edge components of the individual dislocations and show how they result in weak charge heterogeneities via flexoelectric coupling. We show that even systems with small lattice mismatches and additional mechanisms of stress relief (such as mechanical twinning) may still give rise to measurable charge and strain heterogeneities that extend over mesoscopic length scales. This sets more stringent physical limitations on device size, dislocation density, and the achievable degree of lattice mismatch in epitaxial systems.
Magnetoelectric Coupling by Giant Piezoelectric Tensor Design

J. Irwin,S. Lindemann,W. Maeng,J. J. Wang,V. Vaithyanathan,J. M. Hu,L. Q. Chen,D. G. Schlom,C. B. Eom,M. S. Rzchowski

DOI: https://doi.org/10.48550/arXiv.1901.02456

2019-01-08

Applied Physics

Abstract:Strain-coupled magnetoelectric (ME) phenomena in piezoelectric / ferromagnetic thin-film bilayers are a promising paradigm for sensors and information storage devices, where strain is utilized to manipulate the magnetization of the ferromagnetic film. In-plane magnetization rotation with an electric field across the film thickness has been challenging due to the virtual elimination of in-plane piezoelectric strain by substrate clamping, and to the requirement of anisotropic in-plane strain in two-terminal devices. We have overcome both of these limitations by fabricating lithographically patterned devices with a piezoelectric membrane on a soft substrate platform, in which in-plane strain is freely generated, and a patterned edge constraint that transforms the nominally isotropic piezoelectric strain into the required uniaxial strain. We fabricated 500 nm thick, (001) oriented [Pb(Mg$_{1/3}$Nb$_{2/3}$)O$_3$]$_{0.7}$-[PbTiO$_3$]$_{0.3}$ (PMN-PT) unclamped piezoelectric membranes with ferromagnetic Ni overlayers. Guided by analytical and numerical continuum elastic calculations, we designed and fabricated two-terminal devices exhibiting Ni magnetization rotation in response to an electric field across the PMN-PT. Similar membrane heterostructures could be used to apply designed strain patterns to many other materials systems to control properties such as superconductivity, band topology, conductivity, and optical response.
Bending Strain Tailored Magnetic and Electronic Transport Properties of Reactively Sputtered γ΄-Fe4N/Muscovite Epitaxial Heterostructures toward Flexible Spintronics.

Xiaohui Shi,Mei Wu,Zhengxun Lai,Xujing Li,Peng Gao,Wenbo Mi

DOI: https://doi.org/10.1021/acsami.0c08042

IF: 9.5

2020-01-01

ACS Applied Materials & Interfaces

Abstract:The strain modulation on the magnetic and electronic transport properties of the ferromagnetic films is one of the hot topics due to the practical applications in flexible and wearable spintronic devices. However, the large strain-induced saturation magnetization and resistance change is not easy to achieve because most of the ferromagnetic films deposited on flexible substrates are polycrystalline or amorphous. Here, the flexible epitaxial γ΄-Fe4N/mica films are fabricated by facing-target reactive sputtering. At a tensile strain with a radius of curvature (ROC) of 3 mm, the saturation magnetization (Ms) of γ΄-Fe4N/mica film is tailored significantly with a maximal variation of 210%. Meanwhile, the magnetic anisotropy was broadly tunable at different strains, where the out-of-plane Mr/Ms at a tensile strain of ROC=2 mm is 6 times larger than that at unbent state. Besides, the strain-tailored longitudinal resistance Rxx and anomalous Hall resistivity ρxy appear, where the drop of Rxx (ρxy) reaches 5% (22%) at a tensile strain of ROC=3 mm. The shift of nitrogen position in γ΄-Fe4N unit cell at different bending strains plays a key role on the strain-tailored magnetic and electronic transport properties. The flexible epitaxial γ΄-Fe4N films have the potential applications in magneto- and electro-mechanical wearable spintronic devices.
Epitaxially Strained BiMnO3 Films: High-Temperature Robust Multiferroic Materials with Novel Magnetoelectric Coupling

X. Z. Lu,X. G. Gong,H. J. Xiang

DOI: https://doi.org/10.48550/arxiv.1301.3660

2013-01-01

Abstract:Multiferroics with the coexistence of ferroelectric and ferromagnetic orders are ideal candidates for magnetoelectric applications. Unfortunately, only very few ferroelectric-ferromagnetic multiferroics (with low magnetic critical temperature) were discovered. Here we perform first principles calculations to investigate the effects of the epitaxial strain on the properties of BiMnO3 films grown along the pseudocubic [001] direction. Unlike the ground state with the centrosymmetric C2/c space group in bulk, we reveal that the tensile epitaxial strain stabilizes the ferromagnetic and ferroelectric Cc state with a large polarization (P > 80 μC/cm2) and high Curie temperature (Tc is predicted to be between 169 K and 395 K). More importantly, there is a novel intrinsic magnetoelectric coupling in the multiferroic Cc state with the easy magnetization axis controllable by the external electric field.
Controlled Growth of Complex Polar Oxide Films with Atomically Precise Molecular Beam Epitaxy

Fang Yang,Yan Liang,Li-Xia Liu,Qing Zhu,Wei-Hua Wang,Xue-Tao Zhu,Jian-Dong Guo

DOI: https://doi.org/10.1007/s11467-018-0769-z

2018-01-01

Frontiers of Physics

Abstract:At heterointerfaces between complex oxides with polar discontinuity, the instability-induced electric field may drive electron redistribution, causing a dramatic change in the interfacial charge density. This results in the emergence of a rich diversity of exotic physical phenomena in these quasi-two-dimensional systems, which can be further tuned by an external field. To develop novel multifunctional electronic devices, it is essential to control the growth of polar oxide films and heterointerfaces with atomic precision. In this article, we review recent progress in control techniques for oxide film growth by molecular beam epitaxy (MBE). We emphasize the importance of tuning the microscopic surface structures of polar films for developing precise growth control techniques. Taking the polar SrTiO3 (110) and (111) surfaces as examples, we show that, by keeping the surface reconstructed throughout MBE growth, high-quality layer-by-layer homoepitaxy can be realized. Because the stability of different reconstructions is determined by the surface cation concentration, the growth rate from the Sr/Ti evaporation source can be monitored in real time. A precise, automated control method is established by which insulating homoepitaxial SrTiO3 (110) and (111) films can be obtained on doped metallic substrates. The films show atomically well-defined surfaces and high dielectric performance, which allows the surface carrier concentration to be tuned in the range of ~1013/cm2. By applying the knowledge of microstructures from fundamental surface physics to film growth techniques, new opportunities are provided for material science and related research.
Effect of epitaxial strain on the magneto-electric coupling of YMnO3 thin films

A. K. Singh,M. Snure,A. Tiwari,S. Patnaik

DOI: https://doi.org/10.1063/1.3168423

2009-07-09

Abstract:We report synthesis of phase pure multiferroic YMnO3 thin films on sapphire (0001)with conducting ZnGaO buffer contact layer. Films were prepared by using pulsed laser deposition technique and characterized using x-ray diffraction(XRD), Scanning electron microscopy (SEM), Energy dispersive absorption spectroscopy (EDAX) and magnetic field dependent dielectric measurement techniques. Structural characterizations indicated phase purity and epitaxial nature of the films. The dielectric response indicated an anomaly in dielectric constant and tand in the vicinity of 30 K, well below the bulk Neel temperature ~ 70 K. This anomaly in dielectric constant and tand and its magnetic field dependence is explained as an influence of strain due to lattice mismatch between the substrate and YMnO3 film. A substantial enhancement in magnetocapacitance was also observed for magnetic field applied parallel to ab plane of the film. Our results show that it is possible to tune the multiferroic property of YMnO3 via changes in ferroelastic route.

Materials Science
Strain induced anisotropy in liquid phase epitaxy grown nickel ferrite on magnesium gallate substrates

Ying Liu,Peng Zhou,Sudhir Regmi,Rao Bidthanapally,Maksym Popov,Jitao Zhang,Wei Zhang,Michael R. Page,Tianjin Zhang,Arunava Gupta,Gopalan Srinivasan

DOI: https://doi.org/10.1038/s41598-022-10814-8

IF: 4.6

2022-04-29

Scientific Reports

Abstract:Abstract This work focuses on the nature of magnetic anisotropy in 2.5–16 micron thick films of nickel ferrite (NFO) grown by liquid phase epitaxy (LPE). The technique, ideal for rapid growth of epitaxial oxide films, was utilized for films on (100) and (110) substrates of magnesium gallate (MGO). The motivation was to investigate the dependence of the growth induced anisotropy field on film thickness since submicron films of NFO were reported to show a very high anisotropy. The films grown at 850–875 C and subsequently annealed at 1000 C were found to be epitaxial, with the out-of-plane lattice constant showing unanticipated decrease with increasing film thickness and the estimated in-plane lattice constant increasing with the film thickness. The uniaxial anisotropy field H σ , estimated from X-ray diffraction data, ranged from 2.8–7.7 kOe with the films on (100) MGO having a higher H σ value than for the films on (110) MGO. Ferromagnetic resonance (FMR) measurements for in-plane and out-of-plane static magnetic field were utilized to determine both the magnetocrystalline the anisotropy field H 4 and the uniaxial anisotropy field H a . Values of H 4 range from −0.24 to −0.86 kOe. The uniaxial anisotropy field H a was an order of magnitude smaller than H σ and it decreased with increasing film thickness for NFO films on (100) MGO, but H a increased with film thickness for films on (110) MGO substrates. These observations indicate that the origin of the induced anisotropy could be attributed to several factors including (i) strain due to mismatch in the film-substrate lattice constants, (ii) possible variations in the bond lengths and bond angles in NFO during the growth process, and (iii) the strain arising from mismatch in the thermal expansion coefficients of the film and the substrate due to the high growth and annealing temperatures involved in the LPE technique. The LPE films of NFO on MGO substrates studied in this work are of interest for use in high frequency devices.

multidisciplinary sciences
Strain-induced specific orbital control in a Heusler alloy-based interfacial multiferroics

Jun Okabayashi,Takamasa Usami,Amran Mahfudh Yatmeidhy,Yuichi Murakami,Yu Shiratsuchi,Ryoichi Nakatani,Yoshihiro Gohda,Kohei Hamaya

DOI: https://doi.org/10.1038/s41427-023-00524-6

IF: 10.761

2024-01-10

NPG Asia Materials

Abstract:For the development of spintronic devices, the control of magnetization by a low electric field is necessary. The microscopic origin of manipulating spins relies on the control of orbital magnetic moments ( m orb ) by strain; this is essential for the high performance magnetoelectric (ME) effect. Herein, electric-field induced X-ray magnetic circular dichroism (XMCD) is used to determine the changes in m orb by piezoelectric strain and clarify the relationship between the strain and m orb in an interfacial multiferroics system with a significant ME effect; the system consists of the Heusler alloy Co 2 FeSi on a ferroelectric Pb(Mg 1 / 3 Nb 2 / 3 )O 3 -PbTiO 3 substrate. Element-specific investigations of the orbital states by operando XMCD and the local environment via extended X-ray absorption fine structure (EXAFS) analysis show that the modulation of only the Fe sites in Co 2 FeSi primarily contributes to the giant ME effect. The density functional theory calculations corroborate this finding, and the growth of the high index (422) plane in Co 2 FeSi results in a giant ME effect. These findings elucidate the element-specific orbital control using reversible strain, called the 'orbital elastic effect,' and can provide guidelines for material designs with a giant ME effect.

materials science, multidisciplinary
Magnetic anisotropy modulation of magnetite in Fe3O4/BaTiO3(100) epitaxial structures

C. A. F. Vaz,J. Hoffman,A.-B. Posadas,C. H. Ahn

DOI: https://doi.org/10.1063/1.3069280

2008-12-20

Abstract:Temperature dependent magnetometry and transport measurements on epitaxial Fe3O4 films grown on BaTiO3(100) single crystals by molecular beam epitaxy show a series of discontinuities, that are due to changes in the magnetic anisotropy induced by strain in the different crystal phases of BaTiO3. The magnetite film is under tensile strain at room temperature, which is ascribed to the lattice expansion of BaTiO3 at the cubic to tetragonal transition, indicating that the magnetite film is relaxed at the growth temperature. From the magnetization versus temperature curves, the variation in the magnetic anisotropy is determined and compared with the magnetoelastic anisotropies. These results demonstrate the possibility of using the piezoelectric response of BaTiO3 to modulate the magnetic anisotropy of magnetite films.

Materials Science
Investigating Anisotropic Magnetoresistance in Epitaxially Strained CoFe Thin Films on a Flexible Mica

Guang-Yang Su,Min-Chang You,Kai-Wei Chuang,Ming-Hsuan Wu,Cheng-Hsun Hsieh,Chun-Yen Lin,Chao-Yao Yang,Aswin kumar Anbalagan,Chih-Hao Lee

DOI: https://doi.org/10.3390/nano13243154

IF: 5.3

2023-12-16

Nanomaterials

Abstract:This study investigates the crystal structure, epitaxial relation, and magnetic properties in CoFe thin films deposited on a flexible mica substrate. The epitaxial growth of CoFe thin films was successfully achieved by DC magnetron sputtering, forming three CoFe(002) domains exhibiting four-fold symmetry on the mica substrate. A notable achievement of this work was the attainment of the highest anisotropic magnetoresistance (AMR) value reported to date on a flexible substrate. Additionally, it was observed that the magnetic characteristics of the CoFe films on the flexible mica substrate display reversibility upon strain release. More importantly, the AMR effect of epitaxial CoFe films on flexible mica shows lesser dependence on the crystalline orientation and remains the same under different bending states. These findings demonstrate the potential of utilizing CoFe films on flexible substrates to develop wearable magnetoresistance sensors with diverse applications.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry

Amino acid interrelationships in avian nutrition. Introduction.

Magnetization reversal in Fe(001) films grown by magnetic field assisted molecular beam epitaxy

Magnetization States in Epitaxial Thin Films Subjected to Misfit Strains and Demagnetization Field

Applications of Molecular Beam Epitaxy in optoelectronic devices: An overview

Epitaxial Multiferroic Heterostructures And Applications

Electric field manipulation of magnetization in an insulating dilute ferromagnet through piezoelectromagnetic coupling

Crafting the strain state in epitaxial thin films: A case study of CoFe2O4 films on Pb(Mg,Nb)O3-PbTiO3

Development of in situ characterization techniques in molecular beam epitaxy

Engineering magnetic anisotropy and the surface of epitaxial Fe films using ion beam erosion; unveiling self-assembly and tunability

Electric Field Control of the Magnetization Dynamics of Ferromagnetic/Ferroelectric Multiferroic Heterostructure.

Mapping strain modulated electronic structure perturbations in mixed phase bismuth ferrite thin films

Non-destructive mapping of long-range dislocation strain fields in an epitaxial complex metal oxide.

Magnetoelectric Coupling by Giant Piezoelectric Tensor Design

Bending Strain Tailored Magnetic and Electronic Transport Properties of Reactively Sputtered γ΄-Fe4N/Muscovite Epitaxial Heterostructures toward Flexible Spintronics.

Epitaxially Strained BiMnO3 Films: High-Temperature Robust Multiferroic Materials with Novel Magnetoelectric Coupling

Controlled Growth of Complex Polar Oxide Films with Atomically Precise Molecular Beam Epitaxy

Effect of epitaxial strain on the magneto-electric coupling of YMnO3 thin films

Strain induced anisotropy in liquid phase epitaxy grown nickel ferrite on magnesium gallate substrates

Strain-induced specific orbital control in a Heusler alloy-based interfacial multiferroics

Magnetic anisotropy modulation of magnetite in Fe3O4/BaTiO3(100) epitaxial structures

Investigating Anisotropic Magnetoresistance in Epitaxially Strained CoFe Thin Films on a Flexible Mica