1989 JCO orthodontic practice study. 1. Trends.

E. L. Gottlieb,A. Nelson,D. Vogels

Abstract:

What problem does this paper attempt to address?

Halide ion migration in lead-free all-inorganic cesium tin perovskites

Gaoyu Liu,Ye Wu,Yang Liu,Bo Cai,Yuhui Dong,Shengli Zhang,Haibo Zeng

DOI: https://doi.org/10.1063/5.0054210

IF: 4

2021-07-19

Applied Physics Letters

Abstract:Halide perovskites have been one of the most promising research hotspots in the optoelectronic field. Recently, the issue of ion migration has been proved to be of great significance to their long-term stability and performance of optoelectronic devices. However, the stability of perovskite Cs2SnX6 (X = I, Br, Cl) under the light or electric field conditions has not been explored. In this work, we reported halide ion migration in lead-free all‐inorganic perovskite Cs2SnX6. The calculated formation energy to some degree reveals the concentration of the halide vacancy, which provides the favorable conditions for halide ion migration. Importantly, the theoretical long-term ion migration barriers are investigated to be higher than 1.00 eV, indicating they are relatively stable compared to CsPbX3, and the computational result matches the experimental result with the Nernst−Einstein relation that we adopted. The halogen ion migration energy barrier is 0.91 eV under the bias of 5 V, indicating that the perovskite Cs2SnX6 is relatively stable under a certain electric field. Furthermore, the experimental comparison of XRD results demonstrate that perovskite Cs2SnX6 has no obvious ion migration under certain light conditions. Finally, the analysis results show the Sn–X bond strength that explains the cause of such high barriers. These results reveal the migration mechanism of halide ions and provide new impetus for their optoelectronic applications.

physics, applied
Interstitals as non-radiative recombination centers for all-inorganic halide perovskites

Yijun Tong,Xiaofeng Xiang,Scott Dunham

DOI: https://doi.org/10.1016/j.commatsci.2024.113384

IF: 3.572

2024-09-26

Computational Materials Science

Abstract:Inorganic halide perovskites have been considered as higher-stability alternatives to hybrid halide perovskites for optoelectronic applications. However, the formation of defects in these materials can significantly affect carrier density and recombination lifetime. Thus, understanding their properties is of great importance for achieving improved device performance. Through GGA+U calculations with spin–orbital coupling, we calculate the properties of native defects in CsPbI 3 /CsSnI 3 and the defect-assisted non-radiative recombination rates for selected deep levels. Importantly, we discover that the iodine interstitials in CsPbI 3 and tin interstitials in CsSnI 3 have high non-radiative carrier capture rates. Besides, we also notice that complete defect structural relaxations are only achievable when large supercells are used. This work not only provides insights into potential non-radiative recombination pathways due to the formation of corresponding interstitials, but also highlights the importance of utilizing large supercells for defect calculations in perovskites.

materials science, multidisciplinary
Iodide Double Perovskites and the Limits of their Structural Stability

Anya Mulligan,Greggory Kent,Jiale Zhuang,Arava Zohar,Kaitlin R. Albanese,Emily E. Morgan,Guang Wu,Anthony K. Cheetham,Ram Seshadri

DOI: https://doi.org/10.1002/chem.202404009

2024-11-08

Chemistry - A European Journal

Abstract:While halide double perovskites A2M(I)M(III)X6 have attracted significant attention, examples involving iodides are rare. We examine the limits of the structural stability of iodide double perovskites, presenting the synthesis and single‐crystal structures of Cs2NaScI6 and Cs2NaYI6. Bypassing the common expectation that iodides have small band gaps, these compounds display optical gaps of 3.10 eV [M(III) = Sc] and 3.65 eV [M(III) = Y]. Cs2NaScI6 is the only iodide double perovskite to exhibit a cubic crystal structure at room temperature. Density functional theory‐based electronic structure calculations help understand the role of competing Cs3M(III)2I9 (3:2:9) phases and provide possible reasons for why iodide double perovskites based around In(III), Sb(III) and Bi(III) cations have proved elusive. We confirm design rules for halide double perovskite based around concepts of the tolerance factor and the radius ratio of the smaller, trivalent ion, but also point to situations such as what is observed for Cs2NaScI6 where a double perovskite can be trapped in a metastable structure.

chemistry, multidisciplinary
Ion Diffusion Dynamics and Halogen Mixing at the Heterojunction of Halide Perovskites: Atomistic Insights

Gourab Sarkar,Priyanka Deswal,Dibyajyoti Ghosh

DOI: https://doi.org/10.1021/acs.jpcc.3c06329

2024-01-17

The Journal of Physical Chemistry C

Abstract:Hybrid halide perovskites have emerged as a promising class of materials with immense potential for revolutionizing optoelectronic technologies. The exceptionally versatile applications of these materials lie in their tunable band gap and carrier dynamics, achieved through compositional engineering. In mixed hybrid halide perovskites (MHHPs), the homogeneously alloyed anions or their segregated phases, forming precise heterostructures, demonstrate promising photophysics. Nonetheless, an in-depth understanding of the halide interdiffusion perovskite/perovskite heterojunction through interfacial solid-state ion dynamics is mostly missing. Here, we perform first-principles simulations to study the atomistic structure and ion migration processes at the heterojunction between the bromide and iodide phases of lead-based mixed cation perovskites. Due to the anionic size mismatch, the interface remains under structural strain that further depends on the crystal planes of the heterojunction. Moreover, the position of the lattice defect influences the I–Br vacancy formation energetics. The vacancy-assisted ion transports encounter energy barriers that substantially depend on the local structural distortions and strain relaxations along the anion migration pathways. The energetic preference of anion mixing through sequential ion hopping or retainment of a heterojunction strongly relies on the details of the host interfacial plane in this MHHP. Overall, the anion dynamics are directionally anisotropic at these heterojunctions. The study reveals the atomistic solid-state ion diffusion processes in MHHPs and can guide experimental efforts to control anion transport in perovskite/perovskite heterostructures.

chemistry, physical,nanoscience & nanotechnology,materials science, multidisciplinary
[On a case of rhabdomyomyxosarcoma of the bladder].

L. Fedele,L. Miola

Abstract:
Ultrasmall Blueshift of Near-Infrared Fluorescence in Phase-Stable Cs2SnI6 Thin Films

Ripeng Luo,Siwei Zhang,Shichao Zhao,Jingzhou Li,Feiyu Kang,Kuang Yu,Guodan Wei

DOI: https://doi.org/10.1103/physrevapplied.14.014048

IF: 4.6

2020-01-01

Physical Review Applied

Abstract:Cubic Cs2SnI6 perovskite is considered to be an ideal lead-free and air-stable alternative to traditional APbX(3) [A = Cs, K, CH3NH3, CH(NH2)(2)] perovskites for optoelectronic applications, such as solar cells and photodetectors. Herein, both experiments and theoretical calculations are carried out to study the lattice dynamics and temperature dependences of band gaps. Using Raman spectroscopy, we show that the obtained Cs2SnI6 film maintains a long-range crystalline structure of the cubic phase within 77-300 K, which is further confirmed via lattice dynamics calculations based on density functional theory (DFT). An ultrasmall net blueshift of 0.035 eV deduced from its temperature-dependent photoluminescence (PL) spectrum is observed as the temperature increases from 103 to 300 K, making it an ideal material for optoelectronic devices. Notably, this blueshift of the Cs2SnI6 film is significantly smaller than that of the DFT-calculated band-gap shift (similar to 0.085 eV) based on thermal expansion theory. This deviation is attributed to the strong phonon-electron (ph-e) interaction inherently occurring in Cs2SnI6 material, which counterbalances the thermal expansion effects. We further evaluate the magnitude of the ph-e interaction by fitting the full width at half maximum (FWHM) of the PL spectrum. The fitted Huang-Rhys factor (S) of 4.9 is consistent with reduced electronic dimensionality and increased vibrational degree of freedom, indicating stronger ph-e coupling strength in the Cs2SnI6 film compared with regular APbX(3)-type perovskites (S < 3.3). Adopting both thermal expansion and ph-e coupling effects, the ultrasmall band-gap shift is theoretically calculated and is in good agreement with the experimental blueshift of the band gap. In summary, our work illustrates the solid structural stability of Cs2SnI6 in both lattice and electronic structures, paving the way for the next generation of optoelectronic devices.
Unraveling the Critical Roles of Surface Chemical States on Anion Exchange of Halide Perovskites

Fanghao Ye,Mengyao Tian,Xi Lan,Junzi Li,Ming Wang,Siyang Liu,Mingchao Zhu,Zhiqing Zhang,Hang Zhou,Tingchao He,Ping Xu,Guijun Li

DOI: https://doi.org/10.1016/j.cej.2024.149418

IF: 15.1

2024-01-01

Chemical Engineering Journal

Abstract:Anion exchange reactions offer a unique approach to modulate the optical properties of perovskite nanocrystals (NCs) through post-synthesis processes. However, the relationship between the surface ligand dynamic equilibrium and the rational regulation of the anion-exchange process is seldomly studied. In this study, we investigate the kinetics of anion exchange between CsPbBr3 NCs and potassium iodide (KI). We find that the exchange process can be either accelerated or decelerated by using different accompanying ligands during the post-treatment process, and also find the anomaly that an increase in temperature slows down the anion exchange rate. We confirm that accompanying ligands affect anion exchange by disrupting the dynamic equilibrium of native surface ligands or by closing the shuttling channel due to steric hindrance, while the abnormal temperature effect is not dominated by the diffusion process, but by the surface adsorption equilibria. Furthermore, the slow anion exchange process in the case of post-treatment with sodium dodecylbenzene sulfonate (SDSA) would result in a homogeneous halide distribution as well as a large steric hindrance for halide ions, which enable a suppressed ion migration in the device under the stress of electrical field.
[Evaluation of the quality of filling out medical records in a hypertension consultation].

A. Tache,G. Chatellier,J. Ménard

1997-08-01

Abstract:The aim of the study was to evaluate the completion of medical records of a hypertension clinic and to compare standardized computerized records versus standard medical records. The medical records of 163 consecutive hypertensive patients attending at the Broussais hospital hypertension clinic between December 1995, 6th and January 1996, 21st were checked. At the last visit, the patients were attended by 16 physicians working in 4 different teams. The medical data were recorded by physicians in the computerized system called ARTEMIS in 120 patients and in standard structured forms in 43 patients. The patients notes were checked to see if 9 clinical items were recorded at the first visit (V1), at the visit before last (V2) and at the last visit (V3). The overall completion rate was high at V1 (92.2%) and significantly decreased at follow-up visits (82.6% at V2 and 83.2% at V3). The completion rate was significantly higher in the computerized records than in the standard notes: 95.8% vs 82.2% at V1, 91.9% vs 56.3% at V2 and 91.6% vs 59.7% at V3. During follow-up (V2 vs V1), a significant decrease in the completion rate of 6 items was observed in the standard notes (tobacco use, alcohol consumption, physical activity, compliance to treatment, body weight, manual blood pressure measurement). In the computerized records, only physical activity completion rate decreased. In conclusion, the computer may help to increase the quality of the medical records as reflected by the completion rate of items related to hypertension care.
Cation Dynamics in Hybrid Halide Perovskites

Eve M. Mozur,James R. Neilson

DOI: https://doi.org/10.48550/arXiv.2012.05115

2020-12-09

Abstract:Hybrid halide perovskite semiconductors exhibit complex, dynamical disorder while also harboring properties ideal for optoelectronic applications that include photovoltaics. However, these materials are structurally and compositionally distinct from "traditional" compound semiconductors composed of tetrahedrally-coordinated elements with an average valence electron count of silicon. As discussed here, the additional dynamic degrees of freedom of hybrid halide perovskites underlie many of their potentially transformative physical properties. Neutron scattering and spectroscopy studies of the atomic dynamics of these materials have yielded significant insights to the functional properties. Specifically, inelastic neutron scattering has been used to elucidate the phonon band structure, and quasi-elastic neutron scattering (QENS) has revealed the nature of the uncorrelated dynamics pertaining to molecular reorientations. Understanding the dynamics of these complex semiconductors has elucidated the temperature-dependent phase stability and origins of the defect-tolerant electronic transport from the highly polarizable dielectric response. Furthermore, the dynamic degrees of freedom of the hybrid perovskites provides additional opportunities for application engineering and innovation.

Materials Science
Organic Hole Transport Material Ionization Potential Dictates Diffusion Kinetics of Iodine Species in Halide Perovskite Devices

Ross A. Kerner,Sungyeon Heo,Kwangdong Roh,Kyle MacMillan,Bryon W. Larson,Barry P. Rand

DOI: https://doi.org/10.1021/acsenergylett.0c02495

IF: 22

2021-01-14

ACS Energy Letters

Abstract:Iodine-containing volatiles are major degradation products of halide perovskite materials under irradiation, yet iodine diffusion kinetics into and throughout organic hole transport materials (HTMs) and consequent reactions are largely unexplored. Here, we modify the Ca:O2 corrosion test to Ag:I2 to quantify I2 transmission rates through common organic HTMs. We observe I2 permeability to inversely correlate with HTM ionization energy, or the highest occupied molecular orbital (HOMO) energy. Tracking electronic conductance during exposure to I2 confirms shallow HOMO HTMs are strongly oxidized (i.e., doped), leading to substantial I2 uptake and increased transmission rates. Finally, relationships between HOMO level, doping, and transmission rate are maintained when methylammonium lead triiodide (MAPbI3) photolysis products are the only source of iodine. While HTM energetics influence the initial performance of halide perovskite devices by selective charge extraction, our results further suggest they will affect device stability; deeper HOMO energy HTMs will suppress iodine migration and associated degradation mechanisms.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsenergylett.0c02495?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsenergylett.0c02495</a>.Description of experimental methods, tabulated HTM HOMO energies and molecular structures, discussion of diffusion model and computations, additional Ag/HTM and control device current versus time measurements under various conditions, UV–vis–NIR of spiro-MeOTAD exposed to I2, iodide/diiodide/triiodide reaction mechanisms and potentials compared to HTM HOMOs used in this study, and photographs of P3HT reacted with I2 vapor and "dissolved" in chlorobenzene (<a class="ext-link" href="/doi/suppl/10.1021/acsenergylett.0c02495/suppl_file/nz0c02495_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology,energy & fuels,electrochemistry
Intrinsic defect properties in halide double perovskites for optoelectronic applications

Tianshu Li,Xingang Zhao,Dongwen Yang,Mao-Hua Du,Lijun Zhang

DOI: https://doi.org/10.48550/arXiv.1808.05330

2018-08-16

Abstract:Lead-free halide double perovskites with the formula of quaternary A$_2^+$B'B'$^{3+}$X$_6^-$ have recently attracted intense interest as alternatives to lead-halide-perovskite-based optoelectronic materials for their non-toxicity and enhanced chemical and thermodynamic stability. However, the understanding of intrinsic defect properties and their effects on carrier transport and Fermi level tuning is still limited. In this paper, we show that, by exploring the phase diagram of a halide double perovskite, one can control the effects of intrinsic defects on carrier trapping and Fermi level pinning. We reveal the ideal growth conditions to grow p-type Cs$_2$AgInCl$_6$ and Cs$_2$AgBiCl$_6$ as well as semi-insulating Cs$_2$AgBiBr$_6$ with low trap density for targeted photovoltaic or visible-light/radiation detection application.

Materials Science,Computational Physics
Substitution of Lead with Tin Suppresses Ionic Transport in Halide Perovskite Optoelectronics

Krishanu Dey,Dibyajyoti Ghosh,Matthew Pilot,Samuel R Pering,Bart Roose,Priyanka Deswal,Satyaprasad P Senanayak,Petra J Cameron,M Saiful Islam,Samuel D Stranks

2023-05-03

Abstract:Despite the rapid rise in the performance of a variety of perovskite optoelectronic devices with vertical charge transport, the effects of ion migration remain a common and longstanding Achilles heel limiting the long-term operational stability of lead halide perovskite devices. However, there is still limited understanding of the impact of tin (Sn) substitution on the ion dynamics of lead (Pb) halide perovskites. Here, we employ scan-rate-dependent current-voltage measurements on Pb and mixed Pb-Sn perovskite solar cells to show that short circuit current losses at lower scan rates, which can be traced to the presence of mobile ions, are present in both kinds of perovskites. To understand the kinetics of ion migration, we carry out scan-rate-dependent hysteresis analyses and temperature-dependent impedance spectroscopy measurements, which demonstrate suppressed ion migration in Pb-Sn devices compared to their Pb-only analogues. By linking these experimental observations to first-principles calculations on mixed Pb-Sn perovskites, we reveal the key role played by Sn vacancies in increasing the iodide ion migration barrier due to local structural distortions. These results highlight the beneficial effect of Sn substitution in mitigating undesirable ion migration in halide perovskites, with potential implications for future device development.

Materials Science,Applied Physics
Halide Ion Migration in Perovskite Nanocrystals and Nanostructures.

M. Kuno,P. Kamat

DOI: https://doi.org/10.1021/acs.accounts.0c00749

IF: 24.466

2021-01-21

Accounts of Chemical Research

Abstract:ConspectusThe optical and electronic properties of metal halide perovskites provide insight into the operation of solar cells as well as their long-term operational stability. Halide mobility in perovskite films is an important factor influencing solar cell performance. One can visualize halide ion migration through halide exchange between two nanocrystal suspensions or between physically paired films of two different metal halide perovskites. The ability to tune band gap by varying halide ratios (Cl:Br or Br:I) allows the synthesis of mixed halide perovskites with tailored absorption and emission across the entire visible spectrum. Interestingly, mixed halide (e.g., MAPb(Br0.5I0.5)3) films undergo phase segregation to form Br-rich and I-rich sites under steady state illumination. Upon halting illumination, segregated phases mix to restore original mixed halide compositions. Introducing multiple cations (Cs, formamidinium) at the A site or alloying with Cl greatly suppresses halide mobilities. Long-term irradiation of MAPb(Br0.5I0.5)3 films also cause expulsion of iodide leaving behind Br-rich phases. Hole trapping at I-rich sites in MAPb(Br0.5I0.5)3 is considered to be an important step in inducing halide mobility in photoirradiated films. This Account focuses on halide ion migration in nanocrystals and nanostructured films driven by entropy of mixing in dark and phase segregation under light irradiation.

Chemistry,Medicine,Materials Science,Physics
The thermodynamic trends of intrinsic defects in primary halide perovskites: A first-principles study

Haibo Xue,Geert Brocks,Shuxia Tao

DOI: https://doi.org/10.48550/arXiv.2112.15251

2021-12-31

Abstract:Defects in halide perovskites play an essential role in determining the efficiency and stability of the resulting optoelectronic devices. Here, we present a systematic study of intrinsic point defects in six primary metal halide perovskites, MAPbI$_3$, MAPbBr$_3$, MAPbCl$_3$, FAPbI$_3$, CsPbI$_3$ and MASnI$_3$, using density functional theory calculations with the SCAN+rVV10 functional. We analyse the impact of changing anions and cations on the defect formation energies and the charge state transitions levels and identify the physical origins underlying the observed trends. Dominant defects in the lead-iodide compounds are the A$^+$ cation interstitials (A = Cs, MA, FA), charge-compensated by I$^-$ interstitials or lead $({2-})$ vacancies. In the lead-bromide and -chloride compounds, halide vacancies become relatively more prominent, and for MAPbBr$_3$, the Pb$^{2+}$ interstitial also becomes important. The trends can be explained in terms of the changes in electrostatic interactions and chemical bonding upon replacing cations and anions. Defect physics in MASnI$_3$ is strongly dominated by tin $({2-})$ vacancies, promoted by the easy oxidation of the tin perovskite. Intrinsically, all compounds are mildly p-doped, except for MASnI$_3$, which is strongly p-doped. All acceptor levels created by defects in the six perovskites are shallow. Some defects, halide vacancies and Pb or Sn interstitials in particular, create deep donor traps. Although these traps might hamper the electronic behavior of MAPbBr$_3$ and MAPbCl$_3$, in iodine-based perovskites their equilibrium concentrations are too small to affect the materials' properties.

Materials Science
Atomistic insights into the degradation of halide perovskites: a reactive force field molecular dynamics study

Mike Pols,José Manuel Vicent-Luna,Ivo Filot,Adri C.T. van Duin,Shuxia Tao

DOI: https://doi.org/10.1021/acs.jpclett.1c01192

2021-04-04

Abstract:Halide perovskites make efficient solar cells due to their exceptional optoelectronic properties, but suffer from several stability issues. The characterization of the degradation processes is challenging because of the limitations in the spatio-temporal resolution in experiments and the absence of efficient computational methods to study the reactive processes. Here, we present the first effort in developing reactive force fields for large scale molecular dynamics simulations of the phase instability and the defect-induced degradation reactions in inorganic CsPbI$_{3}$. We find that the phase transitions are driven by a combination of the anharmonicity of the perovskite lattice with the thermal entropy. At relatively low temperatures, the Cs cations tend to move away from the preferential positions with good contacts with the surrounding metal halide framework, potentially causing its conversion to a non-perovskite phase. Our simulations of defective structures reveal that, although both iodine vacancies and interstitials are very mobile in the perovskite lattice, the vacancies have a detrimental effect on the stability, initiating the decomposition reactions of perovskites to PbI$_{2}$. Our work puts ReaxFF forward as an effective computational framework to study reactive processes in halide perovskites.

Materials Science
Efficient Modelling of Ion Structure and Dynamics in Inorganic Metal Halide Perovskites

Salvador Rodriguez-Gomez Balestra,Jose Manuel Vicent-Luna,Sofia Calero,Shuxia Tao,Juan A. Anta

DOI: https://doi.org/10.1039/D0TA03200J

2020-03-21

Abstract:Metal halide perovskites (MHPs) are nowadays one of the most studied semiconductors due to their exceptional performance as active layers in solar cells. Although MHPs are excellent solid-state semiconductors, they are also ionic compounds, where ion migration plays a decisive role in their formation, their photovoltaic performance and their long-term stability. Given the above-mentioned complexity, molecular dynamics simulations based on classical force fields are especially suited to study MHP properties, such as lattice dynamics and ion migration. In particular, the possibility to model mixed compositions is important since they are the most relevant to optimize the optical band gap and the stability. With this intention, we employ DFT calculations and a genetic algorithm to develop a fully transferable classical force field valid for the benchmark inorganic perovskite compositional set CsPb(Br_xI_(1-x))_3 (x = 0,1/3,2/3,1). The resulting force field reproduces correctly, with a common set of parameters valid for all compositions, the experimental lattice parameter as a function of bromide/iodide ratio, the ion-ion distances and the XRD spectra of the pure and mixed structures. The simulated thermal conductivities and ion migration activation energies of the pure compounds are also in good agreement with experimental trends. Our molecular dynamics simulations make it possible to predict the compositional dependence of the ionic diffusion coefficient on bromide/iodide ratio and vacancy concentration. For vacancy concentrations of around 9 10^21 cm^-3, we obtained ionic diffusion coefficients at ambient temperature of 10^-11 and 10^-13 cm2/s for CsPbBr3 and CsPbI3, respectively. Interestingly, in comparison with the pure compounds, we predict a significantly lower activation energy for vacancy migration and faster diffusion for the mixed perovskites.

Materials Science
Self-passivation of Halide Interstitial Defects by Organic Cations in Hybrid Lead-Halide Perovskites: Ab Initio Quantum Dynamics

Xinbo Ma,Xuesong Tian,Elizabeth Stippell,Oleg V. Prezhdo,Run Long,Wei-Hai Fang

DOI: https://doi.org/10.1021/jacs.4c12634

IF: 15

2024-10-12

Journal of the American Chemical Society

Abstract:Halide interstitial defects severely hinder the optoelectronic performance of metal halide perovskites, making research on their passivation crucial. We demonstrate, using ab initio nonadiabatic molecular dynamics simulations, that hydrogen vacancies (H(v)) at both N and C atoms of the methylammonium (MA) cation in MAPbI(3) efficiently passivate iodine interstitials (I(i)), providing a self-passivation strategy for dealing with the H(v) and I(i) defects simultaneously. H(v) at the N site...

chemistry, multidisciplinary
Intrinsic defects in photovoltaic perovskite variant Cs2SnI6

Zewen Xiao,Yuanyuan Zhou,Hideo Hosono,Toshio Kamiya

DOI: https://doi.org/10.1039/C5CP03102H

2015-06-25

Abstract:Note: This paper has been published in Physical Chemistry Chemical Physics, which can be viewed at the following URL: <a class="link-external link-http" href="http://doi.org/10.1039/C5CP03102H" rel="external noopener nofollow">this http URL</a> Cs2SnI6, a rarely studied perovskite variant material, is recently gaining a lot of interest in the field of photovoltaics owing to its nontoxity, air-stability and promissing photovoltaic properties. In this work, we report intrinsic defects in Cs2SnI6 using first-principles density functional theory calculations. It is revealed that iodine vacancy and tin interstitial are the dominant defects that are responsible for the intrinsic n-type conduction in Cs2SnI6. Tin vacancy has a very high formation energy (>3.6 eV) due to the strong covalency in the Sn-I bonds and is hardly generated for p-type doping. All the dominant defects in Cs2SnI6 have deep transition levels in the band gap. It is suggested that the formation of the deep defects can be suppressed significantly by employing an I-rich synthesis condition, which is inevitable for photovoltaic and other semiconductor applications.

Computational Physics,Materials Science
Revisiting Sub-Band Gap Emission Mechanism in 2D Halide Perovskites: The Role of Defect States

Igal Levine,Dorothee Menzel,Artem Musiienko,Rowan MacQueen,Natalia Romano,Manuel Vasquez-Montoya,Eva Unger,Carlos Mora Perez,Aaron Forde,Amanda J Neukirch,Lars Korte,Thomas Dittrich

DOI: https://doi.org/10.1021/jacs.4c06621

2024-08-21

Abstract:Understanding the sub-band gap luminescence in Ruddlesden-Popper 2D metal halide hybrid perovskites (2D HaPs) is essential for efficient charge injection and collection in optoelectronic devices. Still, its origins are still under debate with respect to the role of self-trapped excitons or radiative recombination via defect states. In this study, we characterized charge separation, recombination, and transport in single crystals, exfoliated layers, and polycrystalline thin films of butylammonium lead iodide (BA2PbI4), one of the most prominent 2D HaPs. We combined complementary defect- and exciton-sensitive methods such as photoluminescence (PL) spectroscopy, modulated and time-resolved surface photovoltage (SPV) spectroscopy, constant final state photoelectron yield spectroscopy (CFSYS), and constant light-induced magneto transport (CLIMAT), to demonstrate striking differences between charge separation induced by dissociation of excitons and by excitation of mobile charge carriers from defect states. Our results suggest that the broad sub-band gap emission in BA2PbI4 and other 2D HaPs is caused by radiative recombination via defect states (shallow as well as midgap states) rather than self-trapped excitons. Density functional theory (DFT) results show that common defects can readily occur and produce an energetic profile that agrees well with the experimental results. The DFT results suggest that the formation of iodine interstitials is the initial process leading to degradation, responsible for the emergence of midgap states, and that defect engineering will play a key role in enhancing the optoelectronic properties of 2D HaPs in the future.
Electrochemical Doping of Halide Perovskites with Ion Intercalation

Qinglong Jiang,Mingming Chen,Junqiang Li,Mingchao Wang,Xiaoqiao Zeng,Tiglet Besara,Jun Lu,Yan Xin,Xin Shan,Bicai Pan,Changchun Wang,Shangchao Lin,Theo Siegrist,Qiangfeng Xiao,Zhibin Yu

DOI: https://doi.org/10.1021/acsnano.6b08004

IF: 17.1

2017-01-01

ACS Nano

Abstract:Halide perovskites have recently been investigated for various solution-processed optoelectronic devices. The majority of studies have focused on using intrinsic halide perovskites, and the intentional incoporation of dopants has not been well explored. In this work, we discovered that small alkali ions, including lithium and sodium ions, could be electrochemically intercalated into a variety of halide and pseudohalide perovskites. The ion intercalation caused a lattice expansion of the perovskite crystals and resulted in an n-type doping of the perovskites. Such electrochemical doping improved the conductivity and changed the color of the perovskites, leading to an electrochromism with more than 40% reduction of transmittance in the 450-850 nm wavelength range. The doped perovskites exhibited improved electron injection efficiency into the pristine perovskite crystals, resulting in bright light-emitting diodes with a low turn-on voltage.

1989 JCO orthodontic practice study. 1. Trends.

Halide ion migration in lead-free all-inorganic cesium tin perovskites

Interstitals as non-radiative recombination centers for all-inorganic halide perovskites

Iodide Double Perovskites and the Limits of their Structural Stability

Ion Diffusion Dynamics and Halogen Mixing at the Heterojunction of Halide Perovskites: Atomistic Insights

[On a case of rhabdomyomyxosarcoma of the bladder].

Ultrasmall Blueshift of Near-Infrared Fluorescence in Phase-Stable Cs2SnI6 Thin Films

Unraveling the Critical Roles of Surface Chemical States on Anion Exchange of Halide Perovskites

[Evaluation of the quality of filling out medical records in a hypertension consultation].

Cation Dynamics in Hybrid Halide Perovskites

Organic Hole Transport Material Ionization Potential Dictates Diffusion Kinetics of Iodine Species in Halide Perovskite Devices

Intrinsic defect properties in halide double perovskites for optoelectronic applications

Substitution of Lead with Tin Suppresses Ionic Transport in Halide Perovskite Optoelectronics

Halide Ion Migration in Perovskite Nanocrystals and Nanostructures.

The thermodynamic trends of intrinsic defects in primary halide perovskites: A first-principles study

Atomistic insights into the degradation of halide perovskites: a reactive force field molecular dynamics study

Efficient Modelling of Ion Structure and Dynamics in Inorganic Metal Halide Perovskites

Self-passivation of Halide Interstitial Defects by Organic Cations in Hybrid Lead-Halide Perovskites: Ab Initio Quantum Dynamics

Intrinsic defects in photovoltaic perovskite variant Cs2SnI6

Revisiting Sub-Band Gap Emission Mechanism in 2D Halide Perovskites: The Role of Defect States

Electrochemical Doping of Halide Perovskites with Ion Intercalation