Implementing a Two‐in‐One Defect Passivation Strategy Utilizing CsX for High‐Performance Printable Carbon‐Based Perovskite Solar Cells
Jingshan He,Jingwen He,Dun Ma,Wu Shao,Jie Sheng,Huidong Zhang,Liming Zhang,Can Zou,Tian Ding,Ronghao Cen,Shuang Yang,Qi Chen,Yongzhen Wu,Wenjun Wu,Wei‐Hong Zhu
DOI: https://doi.org/10.1002/adfm.202405986
IF: 19
2024-06-11
Advanced Functional Materials
Abstract:Enhancing the performance of printable mesoscopic perovskite solar cells (p‐MPSCs) hinges on effective defect rectification. In this innovative study, a synergistic 'two‐in‐one' defect passivation method involving enriching the TiO2 electron transport layer with a series of cesium halide salts, especially CsF is presented. This integration plays a pivotal role in addressing two critical types of defects: F─ effectively mends oxygen vacancies within the TiO2, mitigating interface stress, while Cs+ targets and repairs methylamine vacancies within the perovskite structure. Consequently, a remarkable increase in power conversion efficiency is obtained, soaring from 16.18% to 18.24%, thereby significantly elevating the efficacy of p‐MPSCs. In the rapidly advancing realm of perovskite solar cells, the rectification of defects has surfaced as a crucial scientific challenge. The control over defect states, especially in printable mesoscopic perovskite solar cells (p‐MPSCs), is hindered by the complexities of screen‐printing technology. Here a novel "two‐in‐one" defect passivation strategy is presented, through doping TiO2 paste with cesium halide salts (CsX, where X = F, Cl, Br, I) to integrate all‐inorganic Cs halides, particularly CsF, into the electron transport layer in p‐MPSCs. Owing to the robust interaction between F− ions and TiO2 compared to Cs+ ions, and the inability of F− to infiltrate the perovskite lattice, F− and Cs+ play distinct roles starting from the buried interface of the p‐MPSCs. Specifically, F− can rectify the oxygen vacancies on the TiO2 surface, thus alleviating the residual stress at the perovskite's buried interface. Simultaneously, Cs+ diffuses to the top perovskite and mends the methylamine vacancies. As a result, the PCE of the optimal device, based on F‐doped TiO2, witnesses a significant improvement from 16.18% (control) to 18.24%. The two‐in‐one strategy utilizing CsX from the buried interface can well realize the all‐inorganic defect rectification, thereby offering a promising prospect for the enhancement of p‐MPSC performance.
materials science, multidisciplinary,nanoscience & nanotechnology,physics, applied,chemistry, physical, condensed matter