Amorphous oxide semiconductor for monolithic 3D DRAM: an enabler or passer-by?

Shujuan Mao,Guilei Wang,Chao Zhao

DOI: https://doi.org/10.1093/nsr/nwad290

2023-11-21

Abstract:Whether amorphous oxide semiconductor (AOS) is an enabler or pass-by for monolithic 3D DRAM is discussed, with current challenges and future directions proposed in this perspective.

What problem does this paper attempt to address?

Oxide and 2D TMD Semiconductors for 3D DRAM Cell Transistors

Jae Seok Hur,Sungsoo Lee,Jiwon Moon,Hang-Gyo Jung,Jongwook Jeon,Seong Hun Yoon,Jin-Hong Park,Jae Kyeong Jeong

DOI: https://doi.org/10.1039/d4nh00057a

2024-03-27

Nanoscale Horizons

Abstract:As the scaling of conventional dynamic random-access memory (DRAM) has reached its limits, 3D DRAM has been proposed as a next-generation DRAM cell architecture. However, incorporating silicon into 3D DRAM technology faces various challenges in securing cost-effective high cell transistor performance. Therefore, many research efforts are actively exploring the application of next-generation semiconductor materials, such as transition oxide semiconductors (OSs) and metal dichalcogenides (TMDs), to address the challenges and realize 3D DRAM. This review provides an overview of the currently proposed structures for 3D DRAM, compares the characteristics of OSs and TMDs, and discusses the feasibility of employing the OSs and TMDs as the channel material for 3D DRAM. Furthermore, we review recent progress in implementing 3D DRAM using the OSs, discussing their potential to overcome challenges occurred in silicon-based approaches.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

Chen Sun,Chao Li,Subhranu Samanta,Kaizhen Han,Zijie Zheng,Jishen Zhang,Qiwen Kong,Haiwen Xu,Zuopu Zhou,Yue Chen,Cheng Zhuo,Kai Ni,Xunzhao Yin,Xiao Gong

DOI: https://doi.org/10.1002/aelm.202200643

IF: 6.2

2022-01-01

Advanced Electronic Materials

Abstract:3D NAND enables continuous NAND density and cost scaling beyond conventional 2D NAND. However, its poly-Si channel suffers from low mobility, large device variations, and instability caused by grain boundaries. Here, we overcome these drawbacks by introducing an amorphous indium-gallium-zinc-oxide (a-IGZO) channel, which has the advantages of ultra-low OFF current, back-end-of-line compatibility, higher mobility and better uniformity than poly-Si, and free of grain boundaries due to the amorphous nature. Ultra-scaled floating-gate (FG) transistors with a channel length of 60 nm are reported, achieving the highest ON current of 127 uA/um among all reported a-IGZO-based flash devices for high-density, low-power, and high-performance 3D NAND applications. Furthermore, a non-volatile and area-efficient ternary content-addressable memory (TCAM) with only two a-IGZO FG transistors is experimentally demonstrated. Array-level simulations using experimentally calibrated models show that this design achieves at least 240x array-size scalability and 2.7-fold reduction in search energy than 16T-CMOS, 2T2R, and 2FeFET TCAMs.
1-Mbit 3-D DRAM Using a Monolithically Stacked Structure of a Si CMOS and Heterogeneous IGZO FETs

Takeya Hirose,Yuki Okamoto,Yusuke Komura,Toshiki Mizuguchi,Toshihiko Saito,Minato Ito,Kiyotaka Kimura,Hiroki Inoue,Tatsuya Onuki,Yoshinori Ando,Hiromi Sawai,Tsutomu Murakawa,Hitoshi Kunitake,Hajime Kimura,Takanori Matsuzaki,Makoto Ikeda,Shunpei Yamazaki

DOI: https://doi.org/10.1109/jeds.2024.3372053

2024-03-27

IEEE Journal of the Electron Devices Society

Abstract:We present a three-dimensional (3D) DRAM prototype, which is formed using oxide semiconductor FETs (OSFETs) monolithically stacked on a Si CMOS. The OSFETs are composed of a one-layer planar FET and two-layer vertical FETs (VFETs). The 1T1C memory cells in the VFET layers and a primary sense amplifier in the planar FET layer, which are formed using heterogeneous OSFETs, provide various circuit functions in the DRAM. The operation of the 3D DRAM in a 1-Mbit memory array is demonstrated for the first time. The results show that the proposed DRAM operates with read and write times of 60 ns and 50 ns, respectively. The leakage current of the memory cell is extremely low (comparable to an A/cell at 85°C), indicating that over 99% of the data are retained in the memory array after one hour at 85°C without refresh.

engineering, electrical & electronic
A Monolithic-3D SRAM Design with Enhanced Robustness and In-Memory Computation Support

Srivatsa Srinivasa,Akshay Krishna Ramanathan,Xueqing Li,Wei-Hao Chen,Fu-Kuo Hsueh,Chih-Chao Yang,Chang-Hong Shen,Jia-Min Shieh,Sumeet Gupta,Meng-Fan Marvin Chang,Swaroop Ghosh,Jack Sampson,Vijaykrishnan Narayanan

DOI: https://doi.org/10.1145/3218603.3218645

2018-01-01

Abstract:We present a novel 3D-SRAM cell using a Monolithic 3D integration (M3D-IC) technology for realizing both robustness and In-memory Boolean logic compute support. The proposed two-layer design makes use of additional transistors over the SRAM layer to enable assist techniques as well as provide logic functions (such as AND/NAND, OR/NOR, XNOR/XOR) without degrading cell density. Through analysis, we provide insights into the benefits provided by three memory assist and two logic modes and evaluate the energy efficiency of our proposed design. Assist techniques improve SRAM read stability by 2.2x and increase the write margin by 17.6%, while staying within the SRAM footprint. By virtue of increased robustness, the cell enables seamless operation at lower supply voltages and thereby ensures energy efficiency. Energy Delay Product (EDP) reduces by 1.6x over standard 6T SRAM with a faster data access. Transistor placement and their biasing technique in layer-2 enables In-memory bitwise Boolean computation. When computing bulk In-memory operations, 6.5x energy savings is achieved as compared to computing outside the memory system.
High Performance Si-MoS2 Heterogeneous Embedded DRAM

Kai Xiao,Jing Wan,Hui Xie,Yuxuan Zhu,Tian,Wei Zhang,Yingxin Chen,Jinshu Zhang,Lihui Zhou,Sheng Dai,Zihan Xu,Wenzhong Bao,Peng Zhou

DOI: https://doi.org/10.1038/s41467-024-54218-w

IF: 16.6

2024-01-01

Nature Communications

Abstract:Embedded Dynamic RAM (eDRAM) has become a key solution for large-capacity cache in high-performance processors. A heterogeneous two transistor capacitorless eDRAM (2T-eDRAM) that combines silicon and molybdenum disulfide (MoS2) is reported to address the short retention issue in conventional gain cell (GC) eDRAMs meanwhile eliminate the pillar capacitor in one transistor and one capacitor (1T1C) eDRAMs. The MoS2 write transistor with low OFF current (IOFF) enables long data retention, while the Si read transistor offers high drive current and logic compatibility. This combination enhances data retention by 1000 times and sense margin by 100 times respectively compared to full Si and MoS2 counterparts. A three-dimensional (3D) design stacking MoS2 on Si is demonstrated with back-end-of-line (BEOL) process to double integration density. With 6000 s data retention, 35 μA/μm sense margin, 5 ns access speeds, 3D integration and CMOS logic compatibility, this Si-MoS2 eDRAM marks a significant advancement in memory technology.
A novel 3D DRAM memory cube architecture for space applications

Anthony Agnesina,Amanvir Sidana,James Yamaguchi,Christian Krutzik,John Carson,Jean Yang-Scharlotta,Sung Kyu Lim

DOI: https://doi.org/10.1145/3195970.3195978

2018-06-24

Abstract:The first mainstream products in 3D IC design are memory devices where multiple memory tiers are horizontally integrated to offer manifold improvements compared with their 2D counterparts. Unfortunately, none of these existing 3D memory cubes are ready for harsh space environments. This paper presents a new memory cube architecture for space, based on vertical integration of Commercial-Off-The-Shelf (COTS), 3D stacked, DRAM memory devices with a custom Radiation-Hardened-By-Design (RHBD) controller offering high memory capacity, robust reliability and low latency. Validation and evaluation of the ASIC controller will be conducted prior to tape-out on a custom FPGA-based emulator platform integrating the 3D-stack.
System-Technology Co-Optimization for 3D Monolithic Memory-Centric Computing

Qi Dang,Yijun Li,Jianshi Tang,He Qian,Bin Gao

DOI: https://doi.org/10.1109/cstic55103.2022.9856854

2022-01-01

Abstract:In post-Moore era, further enhancement of computing efficiency in conventional computing system has become progressively slower due to the memory-wall bottleneck. Monolithic 3D (M3D) integration technology provides ultra-high inter-layer bandwidth, and thus becomes a promising solution for the memory-wall issue. This work will first discuss the principles of M3D memory-centric computing based on back-end-of-line (BEOL) process integration of Resistive Random Access Memory (RRAM) and nano-devices. Next, the recent progresses on system-technology co-optimization (STCO) for the M3D system, including the fabrication process of RRAM devices, computation-in-memory (CIM) circuit and computing system, are reviewed. Furthermore, a cross-layer simulator for M3D STCO is developed. Also, benchmark and design guidelines for the future M3D systems are provided based on the simulator outputs.
All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration

Maheswari Sivan,Yida Li,Hasita Veluri,Yunshan Zhao,Baoshan Tang,Xinghua Wang,Evgeny Zamburg,Jin Feng Leong,Jessie Xuhua Niu,Umesh Chand,Aaron Voon-Yew Thean

DOI: https://doi.org/10.1038/s41467-019-13176-4

2019-11-15

Abstract:3D monolithic integration of logic and memory has been the most sought after solution to surpass the Von Neumann bottleneck, for which a low-temperature processed material system becomes inevitable. Two-dimensional materials, with their excellent electrical properties and low thermal budget are potential candidates. Here, we demonstrate a low-temperature hybrid co-integration of one-transistor-one-resistor memory cell, comprising a surface functionalized 2D WSe2 p-FET, with a solution-processed WSe2 Resistive Random Access Memory. The employed plasma oxidation technique results in a low Schottky barrier height of 25 meV with a mobility of 230 cm2 V-1 s-1, leading to a 100x performance enhanced WSe2 p-FET, while the defective WSe2 Resistive Random Access Memory exhibits a switching energy of 2.6 pJ per bit. Furthermore, guided by our device-circuit modelling, we propose vertically stacked channel FETs for high-density sub-0.01 μm2 memory cells, offering a new beyond-Si solution to enable 3-D embedded memories for future computing systems.
(Invited) BEOL-Compatible Oxide Semiconductor Logic and Memory Devices

Xiao Gong

DOI: https://doi.org/10.1149/ma2023-02301524mtgabs

2023-12-22

ECS Meeting Abstracts

Abstract:3D monolithic integration of logic and memory devices has emerged as one of the key enablers for next-generation electronic devices to address the ever-increasing demand for higher integration density, better performance and energy efficiency. BEOL-compatible oxide semiconductors show great potential to revolutionize the field thanks to their unique properties [1]. We present our recent advancement related to BEOL-compatible oxide semiconductors for logic and memory applications. The digital-etch-enabled nanowire transistors and α -IGZO-based eDRAM will first be discussed, followed by the ferroelectric (FE) memories with high performance and novel structures utilizing α -IGZO or ALD-deposited ZnO as the channel. Ultra-scaled amorphous IGZO ( α -IGZO) nanowire field-effect transistors (NW-FETs) hold great potential for applications demanding high performance and integration density. To realize the fabrication of high-quality and aggressively-scaled nanowire structures, a novel digital etching method for amorphous α -IGZO materials has been proposed and demonstrated [2]. Confirmed by the SEM images of an α -IGZO nanowire before and after digital etching, a notable nanowire width W NW reduction can be observed. We have the thinnest α -IGZO nanowire achieved by the digital etching with a W NW of approximately 20 nm. By further developing the transistor upon the nanowire, the α -IGZO NW-FET attains a good subthreshold swing (SS) of 80 mV/decade and a high peak extrinsic transconductance ( G m, ext ) of 612 μS/μm at V DS of 2 V (456 μS/μm at V DS = 1 V). Compared to the previous studies, our IGZO NW-FET achieves one of the highest peak G m values among all IGZO-based FETs. Besides the BEOL compatibility and high on-current, ultra-low subthreshold leakage makes α -IGZO FETs extremely promising for eDRAM. We further investigated the potential of α -IGZO eDRAM by developing the charge-domain compute-in-memory (CiM) [3]. Experiments have demonstrated small SS, large on-state current, and long-time charge retention with our dedicated 4T1C memory cell. With differential cell structure, an even higher tolerance for charge loss can be attained. With experiment-calibrated benchmarking in the VGG-8 network for CIFAR-10 image classification tasks, 2092 TOPS/W power efficiency for the CiM core can be expected, outperforming the prior TFT and CMOS-based CiM approaches, exhibiting significant advantages for ultra-low-power applications. The integration of doped-HfO 2 FE material and oxide semiconductor, both BEOL-compatible with large-scale and cost-effective deposition, presents a promising avenue for advancing data storage in the future. We have developed the high-performance α -IGZO Fe-FET with a metal-ferroelectric-metal-oxide-semiconductor (MFMIS) structure as well as the Fe TCAM [4]. The α -IGZO Fe-FET achieves a large memory window of ~3 V with high reliability, while the Fe TCAM reduces the transistor number from 16 to 2 compared to the traditional SRAM-based one. Besides α -IGZO, we believe that ALD-based oxide semiconductors featuring high controllability of film thickness and conformal coverage of the 3D structures can create new opportunities for novel device structure and integration. The fin-gate ZnO Fe-FET stands for a great example while not only outstanding device performance but also suppressed device-to-device variation due to the unique structure have been demonstrated, holding tremendous promise for high-density 3D integration [5]. Acknowledgments: This work is supported by Singapore Ministry of Education (Tier 2: MOE2018-T2-2-154, Tier 1: R-263-000-D65-114). References : [1] S. Dutta et al. , IEDM, p. 36.4., 2020. [2] K. Han et al. , VLSI , 2021, p. T10-1. [3] J. Liu et al. , IEDM , 2021, p. 46.2. [4] C. Sun et al. , VLSI , 2021, p. T7-4. [5] Q. Kong et al. , IEDM , 2022, p. 12.3.
Bringing 3D COTS DRAM Memory Cubes to Space

Anthony Agnesina,James Yamaguchi,Christian Krutzik,John Carson,Jean Yang-Scharlotta,Sung Kyu Lim

DOI: https://doi.org/10.1109/aero.2019.8742015

2019-03-01

Abstract:This paper details the architectural choices and implementation challenges faced in the building and validation of a space-qualified 3D DRAM memory system, in an effort to offer high memory capacity, increased bandwidth, fault tolerance and improved size-weight-and-power characteristics needed for harsh space mission environments. Our novel horizontal 3D stacking technology called “Loaf-Of-Bread” (LOB) is used to integrate multiple Commercial-Off-The-Shelf (COTS) DRAM memory dies into a cube structure (3D-M3). A custom Radiation-Hardened-By-Design (RHBD) controller sitting underneath the cube supplements the 3D-M3 in addressing COTS radiation weaknesses by including advanced SEU and SEFI mitigation features such as error detection and correction, scrubbing, device data rebuilding and die management. We developed a custom DDR physical layer (PHY) for 14 independent dies to connect the 3D-M3 to its controller. Validation and functional evaluation of the ASIC controller will be conducted prior to tape-out on a custom FPGA-based emulator platform integrating the 3D-stack. The selected test methodology ensures high-quality RTL as well as allows to subject the cube structure to radiation testing. The proposed design concept allows for flexibility in the choice of the DRAM die in case of technology roadmap changes or unsatisfactory radiation results.
Encapsulation Layer Design and Scalability in Encapsulated Vertical 3D RRAM.

Muxi Yu,Yichen Fang,Zongwei Wang,Gong Chen,Yue Pan,Xue Yang,Minghui Yin,Yuchao Yang,Ming Li,Yimao Cai,Ru Huang

DOI: https://doi.org/10.1088/0957-4484/27/20/205202

IF: 3.5

2016-01-01

Nanotechnology

Abstract:Here we propose a novel encapsulated vertical 3D RRAM structure with each resistive switching cell encapsulated by dielectric layers, contributing to both the reliability improvement of individual cells and thermal disturbance reduction of adjacent cells due to the effective suppression of unwanted oxygen vacancy diffusion. In contrast to the traditional vertical 3D RRAM, encapsulated bar-electrodes are adopted in the proposed structure substituting the previous plane-electrodes, thus encapsulated resistive switching cells can be naturally formed by simply oxidizing the tip of the metal bar-electrodes. In this work, TaO x -based 3D RRAM devices with SiO2 and Si3N4 as encapsulation layers are demonstrated, both showing significant advantages over traditional unencapsulated vertical 3D RRAM. Furthermore, it was found thermal conductivity and oxygen blocking ability are two key parameters of the encapsulation layer design influencing the scalability of vertical 3D RRAM. Experimental and simulation data show that oxygen blocking ability is more critical for encapsulation layers in the relatively large scale, while thermal conductivity becomes dominant as the stacking layers scale to the sub-10 nm regime. Finally, based on the notable impacts of the encapsulation layer on 3D RRAM scaling, an encapsulation material with both excellent oxygen blocking ability and high thermal conductivity such as AlN is suggested to be highly desirable to maximize the advantages of the proposed encapsulated structure. The findings in this work could pave the way for reliable ultrahigh-density storage applications in the big data era.
A Semi-Floating Gate Memory Based on SOI Substrate by TCAD Simulation

Han Li,Chen Wang,Lin Chen,Hao Zhu,Qingqing Sun

DOI: https://doi.org/10.3390/electronics8101198

IF: 2.9

2019-01-01

Electronics

Abstract:Over the past decade, the dimensional scaling of semiconductor electronic devices has been facing fundamental and physical challenges, and there is currently an urgent need to increase the ability of dynamic random-access memory (DRAM). A semi-floating gate (SFG) transistor has been proposed as a capacitor-less memory with faster speed and higher density as compared with the conventional one-transistor one-capacitor (1T1C) DRAM technology. The integration of SFG-based memory on the silicon-on-insulator (SOI) substrate has been demonstrated in this work by using the Sentaurus Technology Computer-Aided Design (TCAD) simulation. An enhancement in retention characteristics, anti-disturbance ability, and fast writing capability, have been illustrated. The device exhibits a low operation voltage, a large threshold voltage window of ~3 V, and an ultra-fast writing of 4 ns. In addition, the SOI-based memory has shown a much-improved anti-irradiation capability compared to the devices based on bulk silicon, which makes it much more attractive in broader applications.
High Performance 2T0C DRAM Cells Based on Atomic-Layer-deposited InAlZnO FETs

Wen Xiong,Binbin Luo,Wei Meng,Bao Zhu,Xiaohan Wu,Shi-Jin Ding

DOI: https://doi.org/10.1007/s11432-024-4112-x

2024-01-01

Science China Information Sciences

Abstract:>Recently, the oxide semiconductor-based 2T0C dynamic random-access memory(DRAM) has shown great potential in monolithic three-dimensional(M3D)-integrated memory,owing to some unique advantages of oxide semiconductors,such as high electron mobility, wide band gap, and compatibility with back-end-of-line(BEOL) processes [1, 2].
Counteractive Coupling IGZO/CNT Hybrid 2T0C DRAM Accelerating RRAM-based Computing-In-Memory Via Monolithic 3D Integration for Edge AI

Mingcheng Shi,Yanbo Su,Jianshi Tang,Yijun Li,Yiwei Du,Ran An,Jiaming Li,Yuankun Li,Jian Yao,Ruofei Hu,Yuan He,Yue Xi,Qingwen Li,Song Qiu,Qingtian Zhang,Liyang Pan,Bin Gao,He Qian,Huaqiang Wu

DOI: https://doi.org/10.1109/iedm45741.2023.10413876

2023-01-01

Abstract:In this work, we demonstrate a novel backend-of-the-line (BEOL) compatible IGZO/CNT hybrid-polarity 2T0C DRAM cell, which is further integrated on our analog RRAM-based monolithic 3D (M3D) integration platform for edge artificial intelligence (AI) applications. Incorporating n-type ultra-low-leakage InGaZnO x (IGZO) for write transistor and p-type high-current carbon nanotubes (CNTs) for read transistor, this design achieves a decent retention and desirably large read currents with a VLSI-compatible low data voltage (V data ). In addition, the unique IGZO-NFET/CNT-PFET hybrid-polarity 2T0C design enhances the effective sensing window and, more importantly, addresses the charge injection issue through counteractive coupling. This BEOL hybrid 2T0C cell achieves a long retention of 170s, a write speed of sub-20 ns and a read current of 29.7 μA/μm at V DS =1V with |V data | = 0.5V. The performance evaluation enables its utilization as a buffer layer on top of the computing-in-memory (CIM) layer with HfO 2 -based analog RRAM, empowering a prototype monolithic 3D chip (namely M3D-BRIC) for high-resolution (Hi-Res) videos processing. A YOLOv3 network is further implemented for the objects detection task, and the benchmarks show that the M3D-BRIC architecture of CIM/2T0C-DRAM could achieve a 48.25× higher processing capability than its 2D counterpart.
Progress, Challenges, and Opportunities in Oxide Semiconductor Devices: A Key Building Block for Applications Ranging from Display Backplanes to 3D Integrated Semiconductor Chips

Taikyu Kim,Cheol Hee Choi,Jae Seok Hur,Daewon Ha,Bong Jin Kuh,Yongsung Kim,Min Hee Cho,Sangwook Kim,Jae Kyeong Jeong

DOI: https://doi.org/10.1002/adma.202204663

IF: 29.4

2022-07-26

Advanced Materials

Abstract:As Si has faced physical limits on further scaling down, novel semiconducting materials such as 2D transition metal dichalcogenides and oxide semiconductors (OS) have gained tremendous attention to continue the ever‐demanding downscaling represented by Moore's law. Amongst, OS is considered to be the most promising alternative material because it has intriguing features such as modest mobility, extremely low off‐current, great uniformity, and low temperature processibility with conventional complementary metal oxide semiconductor‐compatible methods. In practice, OS has successfully replaced hydrogenated amorphous Si in high‐end liquid crystal display devices and has now become a standard backplane electronic for organic light‐emitting diode displays despite the short time since their invention in 2004. For OS to be implemented in next generation electronics such as back‐end‐of‐line transistor applications in monolithic three‐dimensional integration beyond the display applications, however, there is still much room to be studied such as high mobility, imune short‐channel effects, and low electrical contact properties etc. This study reviews the brief history of OS and recent progress in device applications from a material science and device physics point of view. Simultaneously, remaining challenges and opportunities in OS for use in next generation electronics are discussed. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture.

Shimeng Yu,Hong-Yu Chen,Bin Gao,Jinfeng Kang,H-S Philip Wong

DOI: https://doi.org/10.1021/nn305510u

IF: 17.1

2013-01-01

ACS Nano

Abstract:The three-dimensional (3D) cross-point array architecture is attractive for future ultra-high-density nonvolatile memory application. A bit-cost-effective technology path toward the 3D integration that requires only one critical lithography step or mask for reducing the bit-cost is demonstrated in this work. A double-layer HfOx-based vertical resistive switching random access memory (RRAM) is fabricated and characterized. The HfOx thin film is deposited at the sidewall of the predefined trench by atomic layer deposition, forming a vertical memory structure. Electrode/oxide interface engineering with a TiON interfacial layer results in nonlinear I-V suitable for the selectorless array. The fabricated HfOx vertical RRAM shows excellent performances such as reset current (<50 μA), switching speed (<100 ns), switching endurance (>10(8) cycles), read disturbance immunity (>10(9) cycles), and data retention time (>10(5) s @ 125 °C).
How Arsenic Makes Amorphous GeSe a Robust Chalcogenide Glass for Advanced Memory Integration

Rongchuan Gu,Meng Xu,Chong Qiao,Cai-Zhuang Wang,Kai-Ming Ho,Songyou Wang,Ming Xu,Xiangshui Miao

DOI: https://doi.org/10.1016/j.scriptamat.2022.114834

IF: 6.302

2022-01-01

Scripta Materialia

Abstract:The 3D integration technology in semiconductor fabrication requires a key component, the ovonic threshold switching (OTS) selector, to suppress the current leakage. The As doped amorphous (a-) GeSe glass is a commercialized OTS material in 3D phase-change memory, but the understanding of such a doping mechanism is still inadequate. Here we systematically explore the effect of As doping on the structural, bonding, and dynamics properties of a-GeAsSe using ab initio molecular dynamics simulations. The results reveal that As atoms form strong bonds with both Ge and Se atoms. The distorted octahedral structures and the 5-fold rings linked by atoms are increased. All of these structural features lead to a more disordered configuration. Moreover, As atoms have notably slowed down the atomic mobility, rendering a-GeAsSe a high stability. Our studies offer insightful understanding of As-doping in OTS materials, paving the way for the design and application of advanced selector devices.
Resistive switching of silicon-rich-oxide featuring high compatibility with CMOS technology for 3D stackable and embedded applications

Ru Huang,Lijie Zhang,Dejin Gao,Yue Pan,Shiqiang Qin,Poren Tang,Yimao Cai,Yangyuan Wang

DOI: https://doi.org/10.1007/s00339-011-6310-7

2011-01-01

Applied Physics A: Materials Science and Processing

Abstract:This paper discusses the resistive switching devices based on highly compatible silicon-rich-oxide, including silicon monoxide (SiO) and SiO x N y material, which can be fabricated by low temperature process, and thus fully compatible with the back-end CMOS technology. The demonstrated SiO based RRAM suitable for 3D stackable applications shows repeatable unipolar resistive switching behavior with excellent on/off resistance ratio and good retention performance, but a little bit high switching voltage. The presented silicon-rich silicon-oxynitride RRAM device can effectively reduce the switching voltages (∼1 V) and shows good retention capability under 180°C baking as well as fast speed, giving great potentials for 3D stackable and embedded applications. The switching mechanisms in the studied devices are discussed. The method of switching voltage reduction through nitrogen doping, as a kind of defect engineering, can provide some guidelines for RRAM design.
3-D Resistive Memory Arrays: from Intrinsic Switching Behaviors to Optimization Guidelines

Haitong Li,Bin Gao,Hong-Yu (Henry) Chen,Zhe Chen,Peng Huang,Rui Liu,Liang Zhao,Zizhen (Jane) Jiang,Lifeng Liu,Xiaoyan Liu,Shimeng Yu,Jinfeng Kang,Yoshi Nishi,H. -S. Philip Wong

DOI: https://doi.org/10.1109/ted.2015.2468602

IF: 3.1

2015-01-01

IEEE Transactions on Electron Devices

Abstract:3-D resistive switching random access memory (RRAM) is a promising candidate for high-density nonvolatile memory applications, as well as for monolithic 3-D integration interleaved with logic layers. In this paper, we develop a methodology for assessing and optimizing large-scale 3-D RRAM arrays. A systematic study on the intrinsic switching behaviors and optimization of 3-D RRAM arrays is performed, combining device measurements and 3-D array simulations. The dependence of programming voltage on array size, cell location and pulse parameters, statistical properties of operating 3-D RRAM arrays, and subthreshold disturbance on RRAM cells is experimentally investigated. Optimization guidelines for the performance and reliability of 3-D RRAM arrays from device level to architecture level are presented: 1) an optimized 1/n architecture for 100-kb 3-D RRAM arrays can improve write margin by 69.6% and reduce energy consumption by 75.6% compared with a conventional full-size array design; 2) a strategy of prioritizing storage location for reliable operation is presented; and 3) an optimal hopping barrier of oxygen ions is found to improve array immunity to disturbance.

Amorphous oxide semiconductor for monolithic 3D DRAM: an enabler or passer-by?

Oxide and 2D TMD Semiconductors for 3D DRAM Cell Transistors

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

1-Mbit 3-D DRAM Using a Monolithically Stacked Structure of a Si CMOS and Heterogeneous IGZO FETs

A Monolithic-3D SRAM Design with Enhanced Robustness and In-Memory Computation Support

High Performance Si-MoS2 Heterogeneous Embedded DRAM

A novel 3D DRAM memory cube architecture for space applications

System-Technology Co-Optimization for 3D Monolithic Memory-Centric Computing

All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration

(Invited) BEOL-Compatible Oxide Semiconductor Logic and Memory Devices

Bringing 3D COTS DRAM Memory Cubes to Space

Encapsulation Layer Design and Scalability in Encapsulated Vertical 3D RRAM.

A Semi-Floating Gate Memory Based on SOI Substrate by TCAD Simulation

High Performance 2T0C DRAM Cells Based on Atomic-Layer-deposited InAlZnO FETs

Counteractive Coupling IGZO/CNT Hybrid 2T0C DRAM Accelerating RRAM-based Computing-In-Memory Via Monolithic 3D Integration for Edge AI

Progress, Challenges, and Opportunities in Oxide Semiconductor Devices: A Key Building Block for Applications Ranging from Display Backplanes to 3D Integrated Semiconductor Chips

HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture.

How Arsenic Makes Amorphous GeSe a Robust Chalcogenide Glass for Advanced Memory Integration

Resistive switching of silicon-rich-oxide featuring high compatibility with CMOS technology for 3D stackable and embedded applications

3-D Resistive Memory Arrays: from Intrinsic Switching Behaviors to Optimization Guidelines