Exploration of novel High-Pressure Structures of Hf2O3

Minghua Deng,Jingjing Wang,Xingben Yang,Yunhong Chen,Bin Mei,Chuanzhao Zhang,Yuanyuan Jin,Meng Ju
DOI: https://doi.org/10.1016/j.matchemphys.2020.123532
IF: 4.778
2020-11-01
Materials Chemistry and Physics
Abstract:In the high-speed development of information technology, hafnium oxides are the most prospective alternative material for the resistive random-access memory, field-effect transistors and complementary metal oxide semiconductor transistors. Here, we carry out a systematic study on the phase transition, stability and electronic properties of Hf2O3 by using the first-principles calculations. The enthalpy pressure relations show that the P-4m2 phase has the lowest ground state energy under ambient condition, which is correspond well with the reported literatures. With the increasing pressure, at 186.1 GPa, the P-4m2 phase transforms to C 2 ∕ c phase. The calculated phonons and elastic constants of P-4m2 and C 2 ∕ c phases suggest that they are both dynamically and elastically stable. The energy band structure and the density of state calculations show that the P-4m2 phase acts as semimetal, while the C 2 ∕ c phase acts as metallic. The hardness of the P-4m2 phase and C 2 ∕ c phase have been computed based on the semiempirical method. The results indicate that P-4m2 and C 2 ∕ c phases are both hard materials with hardness values of 10.16 GPa and 19.81 GPa, respectively. We expect that our results will promote future experimental studies on Hf2O3.
materials science, multidisciplinary
What problem does this paper attempt to address?