Abstract:The InBiSe3/ReS2 heterostructure photodetector, which exhibits a type II band alignment and operates in a photoconductive mode, is shown to achieve a high responsivity of 7.68 A W−1 and a specific detectivity of 1.26 × 1011 Jones. The devices demonstrate extraordinary optical communication and high‐contrast polarimetric imaging capacity. Individual anisotropic two‐dimensional (2D) materials have been widely applied for developing polarization‐sensitive photodetectors, but they often suffer from limitations in photoresponsivity, detection range, etc. To overcome these challenges, van der Waals (vdW) heterostructures created by stacking different 2D materials provide a promising solution to enhance the performance of the photoelectronic device. In this work, a novel polarization‐sensitive photodetector is developed by leveraging a heterojunction formed by InBiSe3 and anisotropic ReS2 nanoflakes. The InBiSe3/ReS2 vdW heterostructure devices exhibit excellent photodetection performance with a high photoresponsivity (R) of 7.68 A W−1 and a specific detectivity (D*) up to 1.26 × 1011 Jones as well as an external quantum efficiency (EQE) of 1790% under 532 nm laser irradiation. Additionally, benefiting from the broadband light absorption of InBiSe3 crystals together with the pronounced anisotropic electronic and optical characteristics of ReS2 flakes, the devices demonstrate a broad spectral response range from 402 to 1006 nm with a distinct polarization sensitivity of 1.24. Moreover, the devices exhibit extraordinary optical communication and high contrast polarimetric imaging capacity. This work demonstrates the enhanced photodetection performance with the InBiSe3/ReS2 vdW heterostructures operating in a photoconductive mode and illustrates promising application of these heterostructures in integrated optoelectronic systems.

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