Abstract:High-efficiency deep-ultraviolet (DUV) micro light-emitting diodes (LEDs) are explored for inspiring development in numerous fields, such as non-line-of-sight solar-blind communication, optical pumping, and maskless lithography. In this study, we performed FDTD and SimuLED calculations to investigate the optimized DUV micro-LED structure geometry for high light extraction efficiency (LEE) by designing different mesa structures, including square, hexagonal, and circular geometries of micro-LEDs emitted at a wavelength of 275 nm. The results showed that a circular mesa of 5 μm diameter achieved a LEE of 27% from the bottom and sidewall emissions of as-prepared DUV micro-LED. And both the near- and far-field transverse magnetic (TM) polarized light intensities were enhanced by a factor of 1.5 over the square and hexagonal mesas. Meanwhile, the transverse electric (TE) polarized light of the circular mesa structure was enhanced and concentrated along the normal direction. Moreover, the internal quantum efficiency (IQE) of circular mesas with varied sizes was comprehensively investigated in the interactions of the thermal and electric fields. An AlGaN-based DUV micro-LED with a diameter of 5 μm was found to obtain the highest IQE owing to a high current-density distribution and its self-heating properties, thereby achieving a sufficiently high external quantum efficiency (EQE) of 26.75%. This study provides a comprehensive technical report, including electrical, thermal, and optical analyses, and a new perspective for developing high-efficiency, high-performance DUV micro-LEDs in practical applications.

On the origin of the enhanced light extraction efficiency of DUV LED by using inclined sidewalls

Enhanced light extraction efficiency for the inclined-sidewall-shaped AlGaN-based DUV LED by using an omni-directional reflector with a thin hybrid dielectric layer

Effect of the self-aligned etching thin p-GaN layer on the performance of AlGaN-based DUV LEDs with various chip sizes

Improving Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Combining Thinning P-Algan/p-gan Layer with Ni/Au/Al High-Reflectivity Electrodes

Enhanced Light Extraction by Optimizing Surface Microstructure for AlGaN-based Deep Ultraviolet Light Emitting Diodes with 265 and 280 Nm Emission

Colloidal etching of deep ultraviolet LED with improved light extraction efficiency

Improved Light Extraction Efficiency of AlGaN Deep-Ultraviolet Light Emitting Diodes Combining Ag-nanodots/Al Reflective Electrode with Highly Transparent P-Type Layer.

The Dependence of Light Extraction Improvement on Optimized Surface Microstructure for AlGaN-based UVC-LEDs Considering TM-polarized Emission

Angular Distribution of Polarized Light and Its Effect on Light Extraction Efficiency in AlGaN Deep-Ultraviolet Light-Emitting Diodes

Enhancing external quantum efficiency of deep ultraviolet micro-LEDs through geometry design and multi-physics field coupling analysis

Anisotropic Dependence of Light Extraction Behavior on Propagation Path in AlGaN-based Deep-Ultraviolet Light-Emitting Diodes.

Maximizing the Light Extraction Efficiency for AlGaN-Based DUV-LEDs with Two Optimally Designed Surface Structures under the Guidance of PSO

AlGaN-Based DUV LEDs With Al-Composition-Engineered AlGaN Superlattice Inserted at the p-EBL/Hole Supplier Interface

Highly efficient AlGaN-based deep-ultraviolet light-emitting diodes: from bandgap engineering to device craft

Improvement of light extraction efficiency in AlGaInP-based vertical miniaturized-light-emitting diodes via surface texturing

Light extraction efficiency and internal quantum efficiency of fully UVC-transparent AlGaN based LEDs

Enhancing light extraction efficiency of the inclined-sidewall-shaped DUV micro-LED array by hybridizing a nanopatterned sapphire substrate and an air-cavity reflector

Enhanced Performance of an AlGaN-Based Deep-Ultraviolet LED Having Graded Quantum Well Structure

Improving AlGaN-based deep-ultraviolet light-emitting diodes: SiO2 passivation and size optimization for enhanced optoelectronic performance

Performance Enhancement of AlGaN-based Deep Ultraviolet Light-emitting Diodes with AlxGa1-xN Linear Descending Layers

Enhanced light output from deep ultraviolet light-emitting diodes enabled by high-order modes on a photonic crystal surface