A comparison of the female reproductive cycles of autumn-spawning and winter-spawning strains of rainbow trout (Salmo gairdneri Richardson).

A. Scott,J. Sumpter

DOI: https://doi.org/10.1016/0016-6480(83)90160-0

IF: 3.255

1983-10-01

General and Comparative Endocrinology

Abstract:

What problem does this paper attempt to address?

Effect of Noncovalent Interactions on Ag(i)/Cu(ii) Supramolecular Architecture for Dual-Functional Luminescence and Semiconductive Properties

Yang Song,Ruiqing Fan,Xi Du,Kai Xing,Ping Wang,Yuwei Dong,Yulin Yang

DOI: https://doi.org/10.1039/c6ce01106c

IF: 3.756

2016-01-01

CrystEngComm

Abstract:Four novel luminescent materials, namely, [Ag-3(3,2',3'-dpob)(bpy)](n) (1.Ag), [Ag(3,3',4'-H(2)dpob)(bpy)](n) (2.Ag), [Ag-3(3,2',3'-Hdpob)(3,2',3'-H(2)dpob)(bib)(3)center dot 2H(2)O](n) (3.Ag), and [Cu(3,2', 3'-Hdpob)(bib)center dot 2H(2)O](n) (4.Cu) [3,2',3'-H(3)dpob = 3-(2',3'-dicarboxylphenoxy) benzonic acid; 3,3',4'-H(3)dpob = 3-(3',4'-dicarboxylphenoxy) benzonic acid; bpy = 4,4'-bipyridine; bib = 1,4-bis(1-imidazoly)benzene] have been hydrothermally synthesized by mixed ligands and characterized using single crystal X-ray diffraction, infrared (IR), elemental analysis and thermogravimetric analysis (TGA). The crystal structures of four compounds indicate that the hydrogen bonding (O-H center dot center dot center dot O, C-H center dot center dot center dot O and C-H center dot center dot center dot pi) and pi center dot center dot center dot pi p stacking interactions play critical roles in the formation of the extended supramolecular array. 1.Ag displays a rare 3D compact structure with a 1D right-handed helical chain [-Ag1-CO2-Ag3-CO2-Ag1-]. 2.Ag and 3.Ag exhibit a 3D supramolecular architecture linked by intermolecular hydrogen bonds based on a 1D double-chain and 1D triple-chain, respectively. 4.Cu shows a 1D + 1D -> 2D sheet, which is propagated to form an extended 3D structure with pcu (primitive cubic) topology via pi center dot center dot center dot pi stacking. The four compounds display remarkable narrow band emission with smaller full width at half-maximum (FWHM) (77 K, 97.91, 92.27, 72.98 and 77.96 nm; 298 K, 169.41, 241.98, 293.66 and 148.50 nm) in the solid state. The combination of such narrow FWHM and the red-shift from 298 K to 77 K endow them with a prominent thermochromic effect. It is worth noting that 2.Ag and 3.Ag display good aggregation-induced emission (AIE) properties. Both of them show very weak luminescence in dimethyl sulfoxide (DMSO, good solvent) while their intensities increased enormously with the addition of water (H2O, poor solvent) due to aggregation. In addition, adsorption spectra reveal their semiconductive nature (2.35 eV for 1.Ag and 2.91 eV for 3.Ag) and the role of Ag center dot center dot center dot Ag interactions in controlling the performance of semiconductive properties is highlighted.
High photoluminescence Ag-In-Ga-S quantum dots based on ZnX2-treated surface passivation

Danni Yan,Yuhui Dong,Naiwei Wei,Shuai Yang,Hong Zhu,Wanzhong Gu,Yousheng Zou,Haibo Zeng

DOI: https://doi.org/10.1007/s12274-024-6724-0

IF: 9.9

2024-06-16

Nano Research

Abstract:Quaternary Ag-In-Ga-S (AIGS) quantum dot (QD) is considered a promising, spectral-tunable, and environmentally friendly luminescent display material. However, the more complex surface defect states of AIGS QDs resulting from the coexistence of multiple elements lead to a low (< 60%) photoluminescence quantum yield (PLQY). Here, we develop a novel convenient method to introduce Z-type ligands ZnX 2 (X = Cl, Br, I) for passivating the surface defects of AIGS QDs to dramatically enhance the PLQY and stability without affecting the crystalline structure and morphology. Results show that the addition of ZnCl 2 during the purified process of AIGS QDs leads to a 3-fold increase of PLQY (from 28.5% to 87%). Impressively, the highest PLQY is up to a recorded value of 92%, which is comparable to typical heavy metal QDs. Exciton dynamics studies have shown that the rapid annihilation process of excitons in treated QDs is inhibited. We also confirm that the improvement in PLQY is a result of the effective passivation of the non-coordinating atom on the QD surface by building a new bonding between sulfur dangling and Zn 2+ . The realization of high PLQY will further promote the application of AIGS QDs in luminescent displays.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
1,2-Ethanedithiol Treatment for AgIn5S8/ZnS Quantum Dot Light-Emitting Diodes with High Brightness

Changyin Ji,Min Lu,Hua Wu,Xiaoyu Zhang,Xinyu Shen,Xiao Wang,Yu Zhang,Yiding Wang,William W. Yu

DOI: https://doi.org/10.1021/acsami.6b16238

IF: 9.5

2017-01-01

ACS Applied Materials & Interfaces

Abstract:The surface organic ligands of the quantum dots (QDs) play important roles in the performance of QD electronic devices. Here, we fabricated low toxic AgIn5S8/ZnS QDs light-emitting diodes (QD-LEDs) and greatly enhanced the device efficiency through surface ligand exchange treatments. The oleic acid-capped QDs were replaced with a shorter ligand 1,2-ethanedithiol, which was proved by the Fourier transform infrared spectrum measurement. The treated QD films became more compact with higher film mobility and shorter film photoluminescence lifetime. The more conductive QD films fabricated LEDs showed an external quantum efficiency over 1.52%.
Reactivity-matched synthesis of monodisperse Ag(In,Ga)S2 QDs with efficient luminescence

Naiwei Wei,Hong Zhu,Danni Yan,Shuai Yang,Lili Xu,Shengli Zhang,Yuhui Dong,Yousheng Zou,Haibo Zeng

DOI: https://doi.org/10.1039/d4nr00804a

IF: 6.7

2024-07-18

Nanoscale

Abstract:I-III-VI quantum dots (QDs) have gained widespread attention owing to their significant advantages of non-toxicity, large structural tolerance, and efficient photoluminescence potential. However, the disbalance of reactivity between the elements will result in undesired products and compromised optical properties. Reducing the activity of highly reactive group IB elements is the most common approach, but it will reduce the overall reactivity and lead to a wide dispersion of QD sizes. In this study, we propose a method to improve the overall reactivity of the reaction system using the highly active IIIA precursor InI3, which triggers rapid nucleation and promotes the formation of Ag(In,Ga)S2 (AIGS) QDs, resulting in monodisperse particle size distributions and a significantly improved photoluminescence quantum yield (PLQY) (from 12% to 72%). Furthermore, narrow band edge emission is realized by coating a gallium sulfide (GaSx) shell on the basis of obtaining high-quality AIGS QDs. The core/shell QDs exhibit a 90% PLQY with a full width at half maximum (FWHM) of only 31 nm at 530 nm. This study provides a viable design strategy to synthesize monodisperse AIGS QDs with a narrow peak width and efficient luminescence, promoting the application of AIGS QDs in the field of luminescent displays.
Tailoring the Interfacial Structure of Colloidal "giant" Quantum Dots for Optoelectronic Applications.

Haiguang Zhao,Jiabin Liu,Francois Vidal,Alberto Vomiero,Federico Rosei

DOI: https://doi.org/10.1039/c8nr04313b

IF: 6.7

2018-01-01

Nanoscale

Abstract:Colloidal semiconductor quantum dots (QDs) are promising building blocks for the realization of future optoelectronic technologies, thanks to their size-tunable electronic and optical properties. Among various types of QDs, colloidal "giant" QDs (g-QDs, core/thick-shell) have been widely used in different applications, such as solar cells, light emitting devices, luminescent solar concentrators and photoelectrochemical (PEC) hydrogen production. However, g-QDs have a thick-shell which serves as a physical barrier for electron and hole transfer, leading to a slow charge transfer rate. In this work, we synthesized CdSe/CdSexS1-x/CdS core/shell/shell g-QDs with an intermediate CdSexS1-x alloyed layer. The presence of this interfacial layer largely improves the absorption of CdSe/CdS QDs, particularly in the 300-650 nm range. By engineering the interfacial layer, the holes can leak more into the CdS shell region compared to that of CdSe/CdS QDs. PEC devices based on alloyed g-QDs exhibit a 20% higher saturated photocurrent density (11 ± 0.5 mA cm-2) compared to CdSe/CdS QDs. In addition, after one-hour illumination (100 mW cm-2), the PEC cell based on alloyed g-QDs still exhibits a photocurrent density of 7.5 mA cm-2, maintaining 70% of its initial value. Such alloyed g-QDs are very promising for several emerging optoelectronic applications, where charge separation, transfer and transport play a critical role for the realization of high performance devices.
Plasmon-Enhanced Surface-State Emission of CdSe Quantum Dots and Its Application to Microscale Luminescence Patterns

Lian Hu,Huizhen Wu,Chunfeng Cai,Tianning Xu,Bingpo Zhang,Shuqiang Jin,Zhengfen Wan,Xiaodong Wei

DOI: https://doi.org/10.1021/jp210269m

2012-01-01

The Journal of Physical Chemistry C

Abstract:In this paper, we report distinct enhancement of surface-state emissions (SSEs) of colloidal CdSe quantum dots (QDs) via coupling to localized plasmons (LPs) in Ag nanostructures. The roles of oleic acid (OA) ligand on QDs in the formation of Ag nanostructures and in the intense enhancement of SSEs of CdSe QDs are explored. We find that OA ligand on CdSe QDs plays a critical role in modifying the morphology of the contacted Ag, which consequently impacts the coupling of QD emitters with LPs in Ag. A systematic study of size effect of QDs on coupling of SSEs with LPs shows that as-deposited small Ag particles favorably enhance the SSEs of small-size CdSe QDs. The OA ligand on QDs yields better Ag crystallinity and clear corners during the annealing process; therefore, it promotes reshaping of small Ag particles into larger ones, favorable to enhance the SSEs of large-size CdSe QDs. The annealed QDs/Ag hybrid structures are more stable than the unannealed ones due to the loss of the OA ligand in the heating process. The selective coupling of QD emitters with LPs in Ag nanostructures allows feasible realization of microscale fluorescent color patterns. The approach of OA-assisted modification of plasmonic properties of Ag nanostructures provides a new route to synthesizing bright luminescence materials and devices that use colloidal QDs.
Light-Emitting Diodes Based on Colloidal Silicon Quantum Dots with Octyl and Phenylpropyl Ligands.

Xiangkai Liu,Shuangyi Zhao,Wei Gu,Yuting Zhang,Xvsheng Quo,Zhenyi Ni,Xiaodong Pi,Deren Yang

DOI: https://doi.org/10.1021/acsami.7b16980

IF: 9.5

2018-01-01

ACS Applied Materials & Interfaces

Abstract:Colloidal silicon quantum dots (Si QDs) hold ever-growing promise for the development of novel optoelectronic devices such as light-emitting diodes (LEDs). Although it has been proposed that ligands at the surface of colloidal Si QDs may significantly impact the performance of LEDs based on colloidal Si QDs, little systematic work has been carried out to compare the performance of LEDs that are fabricated using colloidal Si QDs with different ligands. Here, colloidal Si QDs with rather short octyl ligands (Octyl-Si QDs) and phenylpropyl ligands (PhPr-Si QDs) are employed for the fabrication of LEDs. It is found that the optical power density of PhPr-Si QD LEDs is larger than that of Octyl-Si QD LEDs. This is due to the fact that the surface of PhPr-Si QDs is more oxidized and less defective than that of Octyl-Si QDs. Moreover, the benzene rings of phenylpropyl ligands significantly enhance the electron transport of QD LEDs. It is interesting that the external quantum efficiency (EQE) of PhPr-Si QD LEDs is lower than that of Octyl-Si QD LEDs because the benzene rings of phenylpropyl ligands suppress the hole transport of QD LEDs. The unbalance between the electron and hole injection in PhPr-Si QD LEDs is more serious than that in Octyl-Si QD LEDs. The currently obtained highest optical power density of ∼0.64 mW/cm2 from PhPr-Si QD LEDs and highest EQE of ∼6.2% from Octyl-Si QD LEDs should encourage efforts to further advance the development of high-performance optoelectronic devices based on colloidal Si QDs.
One-pot synthesis of Ag-In-Ga-S nanocrystals embedded in a Ga2O3 matrix and enhancement of band-edge emission by Na+ doping

Makoto Tozawa,Chie Miyamae,Kazutaka Akiyoshi,Tatsuya Kameyama,Takahisa Yamamoto,Genichi Motomura,Yoshihide Fujisaki,Taro Uematsu,Susumu Kuwabata,Tsukasa Torimoto

DOI: https://doi.org/10.1039/d3na00755c

2023-11-14

Abstract:I-III-VI-based semiconductor quantum dots (QDs) have been intensively explored because of their unique controllable optoelectronic properties. Here we report one-pot synthesis of Na-doped Ag-In-Ga-S (AIGS) QDs incorporated in a Ga2O3 matrix. The obtained QDs showed a sharp band-edge photoluminescence peak at 557 nm without a broad-defect site emission. The PL quantum yield (QY) of such QDs was 58%, being much higher than that of AIGS QDs without Na+ doping, 29%. The obtained Na-doped AIGS/Ga2O3 composite particles were used as an emitting layer of green QD light-emitted diodes. A sharp electroluminescence (EL) peak was observed at 563 nm, being similar to that in the PL spectrum of the QDs used. The external quantum efficiency of the device was 0.6%.
Rational Design of AgGaS/ZnS/ZnS Quantum Dots with a Near-Unity Photoluminescence Quantum Yield Via Double Shelling Scheme

H. X. Lua,H. Liu,Z. Z. Fu,Y. Y. Chen,H. Q. Dai,Z. Hua,W. L. Zhang,R. Q. Guo

DOI: https://doi.org/10.1016/j.jmst.2023.06.015

2024-01-01

Abstract:In this study, a two-step method was used to synthesize highly luminescent AgGaS/ZnS/ZnS quantum dots (QDs). In the first step, an inner ZnS shell was formed via a one-pot method, which resulted in a smaller lattice mismatch between the AgGaS core and the outer ZnS shell, thereby facilitating the formation of a thick outer shell. After the two-step shelling process, the synthesized AgGaS/ZnS/ZnS QDs showed an excellent photoluminescence quantum yield (PLQY) of 96.4% with a peak wavelength of 508 nm, representing the highest PLQY reported thus far for AgGaS QDs. Furthermore, the effect of halogen ions in Zn precursors on the shelling process was investigated. It was proposed that the capacity of halogen ions to coordinate with the QDs influenced the balance between Zn cation diffusion and ZnS shelling reaction. Specifically, the ZnS shelling reaction was dominant when ZnCl 2 was employed, while Zn cation diffusion was the dominant process under the I --rich environment. This work provides insights into the interfacial restructuring during the ZnS shelling and offers a clear map for the tailored synthesis of core/shell QDs. & COPY; 2023 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
Modulating Eco‐friendly Colloidal AgGaS2 Quantum Dots for Highly Efficient Photodetection and Image Sensing via Direct Growth of Ternary AgInS2 Shell

Xin Li,Xin Tong,Li Xia,Hongyang Zhao,Jingyin Luo,Zhuojian Li,Zhiming M. Wang

DOI: https://doi.org/10.1002/smll.202404261

IF: 13.3

2024-09-30

Small

Abstract:Direct growth of ternary AgInS2 (AIS) shell on eco‐friendly AgGaS2 (AGS) core quantum dots (QDs) are achieved and lead to enhanced visible light absorption, extended carrier lifetime and improved photoluminescence quantum yield. As‐prepared AGS/AIS core/shell QDs demonstrate facilitated charge separation/transport and are employed as light‐sensitive building blocks to fabricate high‐performance photodetectors for image sensing application. Tailoring the optoelectronic characteristics of colloidal quantum dots (QDs) by constructing a core/shell structure offers the potential to achieve high‐performing solution‐processed photoelectric conversion and information processing applications. In this work, the direct growth of wurtzite ternary AgInS2 (AIS) shell on eco‐friendly AgGaS2 (AGS) core QDs is realized, giving rise to broadened visible light absorption, prolonged exciton lifetime and enhanced photoluminescence quantum yield (PLQY). Ultrafast transient absorption spectroscopy demonstrats that the photoinduced carrier separation and transfer kinetics of AGS QDs are significantly optimized following the AIS shell coating. As‐synthesized environmentally benign AGS/AIS core/shell QDs are employed to fabricate photodetectors (PDs), showing a remarkable responsivity of 38.4 A W−1 and a detectivity of 2.4 × 1012 Jones under visible light illumination (405 nm). Moreover, the fabricated QDs‐PDs exhibit superior image‐sensing capability to record complex patterns with high resolution (160 × 160 pixels) under visible light illumination at 405 and 532 nm. The findings indicate that the direct growth of multinary narrow‐band shell materials on eco‐friendly QDs holds great promise to implement future "green", cost‐effective and high‐performance optoelectronic sensing/imaging systems.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Exchange of Thiol Ligands on CuInS2 Quantum Dots in High Boiling Solvents

Satoshi Koyasu,Haruna Ikeda,Takamasa Ishigaki

DOI: https://doi.org/10.1021/acs.langmuir.4c01475

IF: 3.9

2024-09-03

Langmuir

Abstract:As-prepared quantum dots are covered with long-chain ligands to prevent aggregation. When quantum dots are used in optoelectronic devices such as solar cells and QD-LED, ligand exchange is necessary to replace long-chain ligands with short-chain ones to increase the efficiency of charge transfer from the quantum dots to the electrode. In this study, we successfully exchanged 1-dodecanethiol (DDT) ligands on CuInS2 quantum dots with mercaptopropionic acid (MPA) ligands by using a two-phase system of high-boiling hydrophilic and hydrophobic solvents. The ligand exchange to MPA was achieved by using diethylene glycol (DEG) or ethylene glycol (EG) as the hydrophilic phase and tetradecane as the hydrophobic phase. The ligand exchange rate increased with increasing ligand exchange temperature. When quantum dot sensitized solar cells (QDSSCs) were fabricated using the ligand-exchanged quantum dots, a positive correlation was observed between the progress of ligand exchange and short-circuit current density. This is because charge transfer efficiency from the quantum dots to the TiO2 electrode was improved by the ligand exchange. This work has shown that QDs synthesized using DDT can be applied to optoelectronic devices.
Enhancement of the alloyed CdZnSeS/ZnS quantum dots photoluminescence by thiol ligands capping

Daniil D. Drozd,Pavel D. Strokin,Danila A. Kornilov,Arina V. Drozd,Andrey M. Burov,Arseni V. Ushakov,Olga A. Goryacheva,Irina Yu. Goryacheva

DOI: https://doi.org/10.1016/j.cej.2024.152278

IF: 15.1

2024-05-24

Chemical Engineering Journal

Abstract:Most of the existing hydrophilization techniques for the semiconductor quantum dots (QDs) lead to degradation of photoluminescence (PL). Therefore, for the applying of QDs in the areas requiring their stability in water media (e.g. bio- and chemical analysis, labeling and sensing), it is often necessary to find a balance between high stability, good optical properties, and difficulty of acquiring. This article describes simple, fast, and easy scalable methods for alloyed CdZnSeS/ZnS QDs ligand exchange using 2-mercaptoethanol, thioglycolic, 3-mercaptorpopionic and dihydrolipoic acids. The proposed ligand exchange techniques provide the enhancement of the QDs photoluminescence intensity in contrast to most of other ligand exchange procedures on the QDs surface. In optimized conditions the twofold photoluminescence quantum yield increase compared to the initial hydrophobic CdZnSeS/ZnS QDs was achieved. Hydrophilized nanoparticles maintained colloidal stability for a period more than 13 months. The suggested mechanism of the PL increase is the passivation of the QDs surface with molecules containing a thiol group. The combination of the proposed effective CdZnSeS/ZnS QDs synthesis and modification methods shows the prospect of their implementation as basic luminescent material for a wide range of applications.

engineering, chemical, environmental
A facile synthesis of highly efficient and widely emission tunable quintuple CuZnGaSSe quantum dots

Zizhao Fu,Hanxu Lu,Hong Liu,Yifeng Xing,Zhiyan Piao,Hanqing Dai,Wanlu Zhang,Ruiqian Guo

DOI: https://doi.org/10.1016/j.apmt.2023.101922

IF: 8.663

2023-10-01

Applied Materials Today

Abstract:Due to their unique optical properties, I-III-VI alloyed quantum dots (QDs) have attracted significant attention. By cationic alloying and composition adjusting, quaternary and quintuple alloyed QDs could be synthesized and the optical properties could be further investigated by adjusting the synthesis parameters. In this study, we synthesized CuZnGaSSe (CZGSSe) QDs using a one-pot method and the photoluminescence quantum yield (PL QY) could reach 72.2%. The effects of the capping ligands, the halogen ions in Zn precursors and the reaction temperatures were explored and the growth mechanism of the CZGSSe QDs was discussed. Finally, by adjusting the S/Se ratio and Cu/Ga ratio, the prepared QDs exhibited tunable emission wavelengths ranging from 469 nm to 599 nm. This study is of significance for researching the growth sequence and guiding the synthesis of efficient quintuple QDs.

materials science, multidisciplinary
Aqueous Synthesis of Photoluminescence Enhanced CuInS2/ZnS Quantum Dots Via the Facile Hot Injection Growth of AgInS2 Interlayer

Zhiyan Piao,Dan Yang,Zizhao Fu,Haiyang He,Zhongjie Cui,Hanxu Lu,Yuanyuan Chen,Shiliang Mei,Wanlu Zhang,Ruiqian Guo

DOI: https://doi.org/10.1016/j.jallcom.2024.174125

IF: 6.2

2024-01-01

Journal of Alloys and Compounds

Abstract:In this study, the hot injection of Ag ions to enhance the PL performance of aqueous-phase CuInS2/ZnS quantum dots (QDs) via the formation of AgInS2 interlayer is first developed. Different amount of Ag doping by hot injection realizes the precise tuning of the peak wavelength from 649nm to 684nm, while the photoluminescence quantum yield is also improved from 14.79% to 26.8% due to the formation of the AgInS2 interlayer on the surface of CuInS2 QDs. The results of various characterizations demonstrate the formation of AgInS2 interlayer and explain the enhanced PL performance of CuInS2 QDs. This will expand the understanding of the PL enhancement of the aqueous-phase CuInS2/ZnS QDs and solidify the foundation for subsequent practical research to further realize the potential of aqueous CuInS2 QDs.
Three Dimensional Perfusion Culture of Encapsulated Embryonic Stem Cells in Microfluidic Chip

C. Kim,K. Lee,I. Lee,K.S. Shin,E. Kang,K.J. Lee,J.Y. Kang

DOI: https://doi.org/10.1109/SENSOR.2007.4300387

2007-06-10

Abstract:This paper presents encapsulation of embryonic stem (ES) cells in alginate beads using immiscible two-phase microfluidic chip and also demonstrates a perfusion culture of the encapsulated cells in microfluidic chip for statistical study of differentiation of stem cells. 3D culture of stem cells in microfluidic chip was demonstrated through the encapsulation of cells in alginate beads. ES cells were aggregated to form embryonic body without cell death and the perfusion culture chip was capable of obtaining statistical differentiation status of stem cells in each bead.
Radiographic remission in seropositive rheumatoid arthritis. A 20-year follow-up study.

J. Jäntti,K. Kaarela,H. Kautiainen,H. Isomäki,K. Aho

2001-09-01

Clinical and Experimental Rheumatology

Abstract:OBJECTIVE Rheumatoid arthritis (RA) is in most instances a progressive disease. Very little information is available on halting of the radiographic damage, particularly in later phases of the disease. We studied radiographic remission of RA lasting to the end of follow-up, covering the period 1973-96. METHODS Radiographs of hands and feet were taken at onset and at 1, 3, 8, 15 and 20 years from entry in 102 cases of recent onset (< 6 months) seropositive and erosive RA. A Larsen score of 0-100 was formed for 20 joints of hands and feet. If the score did not worsen by more than one point between one of the above time points and the end of the study, the patient was considered to be in remission. RESULTS Remission was confirmed in 27 (26%) of the patients. In 3 cases the remission was from the 1-year check-up, in 5 from the 3-year check-up, in 6 from the 8-year check-up and in 13 cases from the 15-year check-up. Some of the remission cases had a mild disease from the outset, but there were cases in which the disease process had led to marked joint destruction before slowing down. CONCLUSION This data may serve as a basis for comparison with subsequent cohort studies on new treatments-of-choice.
Surface Engineering Enables Efficient AgBiS2 Quantum Dot Solar Cells.

Yongqiang Ji,Qixuan Zhong,Xiaoyu Yang,Lei Li,Qiuyang Li,Hongyu Xu,Peng Chen,Shunde Li,Haoming Yan,Yun Xiao,Fan Xu,Hengwei Qiu,Qihuang Gong,Lichen Zhao,Rui Zhu

DOI: https://doi.org/10.1021/acs.nanolett.4c00959

IF: 10.8

2024-01-01

Nano Letters

Abstract:Surface ligand chemistry is vital to control the synthesis, diminish surface defects, and improve the electronic coupling of quantum dots (QDs) toward emerging applications in optoelectronic devices. Here, we successfully develop highly homogeneous and dispersed AgBiS2 QDs, focus on the control of interdot spacing, and substitute the long-chain ligands with ammonium iodide in solution. This results in improved electronic coupling of AgBiS2 QDs with excellent surface passivation, which greatly facilitates carrier transport within the QD films. Based on the stable AgBiS2 QD dispersion with the optimal ligand state, a homogeneous and densely packed QD film is prepared by a facile one-step coating process, delivering a champion power conversion efficiency of approximately 8% in the QD solar cells with outstanding shelf life stability. The proposed surface engineering strategy holds the potential to become a universal preprocessing step in the realm of high-performance QD optoelectronic devices.
Emission Tuning of Highly Efficient Quaternary Ag-Cu-Ga-Se/ZnSe Quantum Dots for White Light-Emitting Diodes.

Jinxin Wei,Zhe Hu,Wenjie Zhou,Yi Qiu,Hanqing Dai,Yuanyuan Chen,Zhongjie Cui,Siyu Liu,Haiyang He,Wanlu Zhang,Fengxian Xie,Ruiqian Guo

DOI: https://doi.org/10.1016/j.jcis.2021.05.110

IF: 9.9

2021-01-01

Journal of Colloid and Interface Science

Abstract:With the blooming development of zero-dimensional nanomaterials, I-III-VI alloying quantum dots (QDs) with outstanding photoelectrical properties have emerged to attract much attention as promising environmentally-friendly substitutions for conventional binary Cd-based QDs. In this work, a facile one-pot method was introduced to synthesize unreported quaternary Ag-Cu-Ga-Se/ZnSe (ACGSe/ZnSe) QDs. A relatively high photoluminescence quantum yield (PL QY) of 71.9% and a tunable emission from 510 to 620 nm were successfully achieved. We explored the roles of alloying compositions in ACGSe/ZnSe QDs, inferring that increased Ag proportion would not only lower the V-defect level which leads to the blue shift of emission, but also slow the ZnSe shelling process owing to the larger lattice distortion. At last, the white light-emitting diodes (WLEDs) were fabricated with ACGSe/ZnSe QDs as the conversion layer, indicating that the as-prepared QDs are a promising candidate for further applications. (C) 2021 Published by Elsevier Inc.
Capping Ligand Engineering of Cadmium‐Free AIZS Quantum Dots Toward Bright Electroluminescent Light‐Emitting Diodes by All‐Solution Process

Yongfeng Liu,Xinyi Wang,Zhaoju Gao,Wenbin Yu,Jinpeng Yang,Feng Xu,Wei Pei,Jia Wang,Min Zhou

DOI: https://doi.org/10.1002/admi.202400385

IF: 5.4

2024-09-14

Advanced Materials Interfaces

Abstract:Short‐chain 1‐octanethiol is employed for cadmium‐free AgInZnS quantum dots (AIZS QDs) as capping ligand, which enhanced PLQY, improved film‐forming ability, and increased conductivity of the resultant QDs. As a result, the QD based electroluminescent LEDs demonstrated enhanced luminance and current efficiency, reaching 515 cd m−2 and 0.4 cd A−1, respectively. Cadmium‐free AgInZnS (AIZS) quantum dots (QDs) have garnered significant research interest for applications in light‐emitting diodes (LEDs); however, their performance remains limited by insulating long‐chain ligands. In this study, highly fluorescent orange‐emitting AIZS QDs are synthesized by replacing long‐chain 1‐dodecanethiol (DDT) with short‐chain 1‐octanethiol (OTT), achieving photoluminescence quantum yields of up to 80% in solution and 60% in film. The incorporation of OTT in combination with oleic acid and oleylamine as co‐capping ligands enabled excellent dispersion of the QDs in non‐polar solvents. The resulting OTT‐capped AIZS QDs exhibited improved film smoothness and reduced nonradiative recombination. Furthermore, all‐solution‐processed QD light‐emitting diodes (QLEDs) are fabricated comprising indium tin oxide/poly(3,4‐ethylenedioxythiophene) polystyrene sulfonate/hole transporting layer/AIZS QDs/ZnO electron transporting layer/Al. The effects of OTT capping and the thickness of the AIZS emitting layer on device performance are systematically evaluated. As a result, the QLEDs demonstrated enhanced luminance and current efficiency, reaching 515 cd m−2 and 0.4 cd A−1 respectively, representing improvements of over 50% and 33% compared to devices utilizing DDT‐capped AIZS QDs. This study presents a facile and effective approach for developing high‐brightness AIZS QLEDs.

materials science, multidisciplinary,chemistry
Ligand-assisted structure tailoring of highly luminescent Cu-In-Zn-S/ZnS//ZnS quantum dots for bright and stable light-emitting diodes

Shuaipu Zang,Xuhui Zhang,Yingying Sun,Ning Li,Lei Wang,Lin Song Li

DOI: https://doi.org/10.3389/fchem.2022.1102514

IF: 5.5

2022-12-14

Frontiers in Chemistry

Abstract:Harnessing environment-friendly and low-cost multinary Cu-In-Zn-S quantum dots (QDs) as emitters for light-emitting diodes (LEDs) has attracted great attention for display and lighting application. However, suboptimal QD structure is a huge obstacle, which results in serious non-radiative recombination and efficiency roll-off. Herein, we synthesized structure-tailored Cu-In-Zn-S/ZnS//ZnS QDs by improving the reactivity of shell growth by 2-ethylhexanoic acid (EHA) ligands. The EHA-assisted shell growth can boost an extended alloyed layer at the core-shell interface and a smoothed confinement barrier, which effectively passivate the interface defects and suppress Förster resonance energy transfer (FRET) process. These synthesized QDs display a bright photoluminescence emission (quantum yield of 83%) and a larger size of 8.4 nm. Moreover, the resulting LEDs based on the EHA-assisted QDs exhibit a maximum luminance of 8074 cd/m 2 , and a current efficiency of 7.3 cd/A with a low efficiency roll-off. Our results highlight a remarkable ligand strategy to tailor the QD structure for high performance QD-based LEDs.

chemistry, multidisciplinary

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