Abstract:This study presents a pioneering electrochemical approach to tailor the anodization outcomes of heavily doped p-type silicon, a subset of low-resistivity semiconductor materials, via low-temperature anodization. Conventionally, anodizing such silicon in hydrofluoric acid at room temperature leads to the formation of coarse porous silicon with negligible photoluminescence (PL) upon exposure to ultraviolet (UV) radiation. In this investigation, we embark on an unconventional path by conducting the anodization process at an exceptionally low temperature of -20°C. This seemingly subtle adjustment, however, triggers a remarkable transformation in the optical characteristics of the silicon substrate. Strikingly, the anodized surface, when illuminated with UV radiation, emits a vibrant and distinct red PL signal (Figure 1), signifying the emergence of quantum confinement effects attributable to nanocrystals, i.e., quantum dots. To substantiate the existence of these nanostructures, we employ advanced characterization techniques, with a focus on transmission electron microscopy (TEM). These rigorous analyses confirm the presence of well-defined silicon nanocrystals, typically measuring within the 3~4 nm range (Figure 2), meeting the prerequisites for quantum confinement effects. Notably, it is worth mentioning that the formation of such nanostructures is unattainable on heavily boron-doped silicon due to its high etching rate. In conclusion, our findings underscore the potential of low-temperature anodization as a versatile tool to tailor the luminescent properties of porous silicon at the nanoscale. This breakthrough not only advances our fundamental comprehension of semiconductor electrochemistry but also holds the promise of driving progress in electrochemical fabricating semiconductor quantum dots and optoelectronics. Figure 1

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