Abstract:Neuromorphic computing systems have shown powerful capability in tasks, such as recognition, learning, classification and decision-making, which are both challenging and inefficient in using the traditional computation architecture. The key elements including synapses and neurons, and their feasible hardware implementation are essential for practical neuromorphic computing. However, most existing synaptic devices used to emulate functions of a single synapse and the synapse-based networks are more energy intensive and less sustainable than their biological counterparts. The dendritic functions such as integration of spatiotemporal signals and spike-frequency coding characteristics have not been well implemented in a single synaptic device and thus play an imperative role in future practical hardware-based spiking neural networks. Moreover, most emerging synaptic transistors are fabricated by nanofabrication processes without CMOS compatibility for further wafer-scale integration. Herein, we demonstrate a novel ionic-gated silicon nanowire synaptic field-effect transistor (IGNWFET) with low power consumption (<400 fJ per switching event) based on the standard CMOS process platform. For the first time, the dendritic integration and dual-synaptic dendritic computations (such as "Add" and "Subtraction") could be realized by processing frequency coded spikes using a single device. Meanwhile, multi-functional characteristics of artificial synapses including the short-term and long-term synaptic plasticity, paired pulse facilitation and high-pass filtering were also successfully demonstrated based on 40 nm wide IGNWFETs. The migration of ions in polymer electrolyte and trapping in high-k dielectric were also experimentally studied in-depth to understand the short-term plasticity and long-term plasticity. Combined with statistical uniformity across a 4-inch wafer, the comprehensive performance of IGNWFET demonstrates its potential application in future biologically emulated neuromorphic systems.

Controlled Growth of Wafer-Scale Transition Metal Dichalcogenides with a Vertical Composition Gradient for Artificial Synapses with High Linearity

Artificial Synapse Based on van der Waals Heterostructures with Tunable Synaptic Functions for Neuromorphic Computing

Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics

Multi-terminal Ionic-Gated Low-Power Silicon Nanowire Synaptic Transistors with Dendritic Functions for Neuromorphic Systems.

A high linearity and energy-efficient artificial synaptic device based on scalable synthesized MoS2

Ultralow-Power Synaptic Transistor Based on Wafer-Scale MoS 2 Thin Film for Neuromorphic Application

High Conductance Margin for Efficient Neuromorphic Computing Enabled by Stacking Nonvolatile van der Waals Transistors

Atomic Nb-doping of WS2 for high-performance synaptic transistors in neuromorphic computing

Touch-modulated Van Der Waals Heterostructure with Self-Writing Power Switch for Synaptic Simulation

Neuromorphic Computing: Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics (Adv. Mater. 21/2018)

Tunable magnetic synapse for reliable neuromorphic computing

Design and Simulation of a Novel Multi-Floating-gate Synaptic Nanowire Transistor for Neuromorphic Computing

Electret/High-<i>k</i> Solution Dielectric for Low Voltage Synaptic Transistors With Near Linear and Ambipolar Weight Update

Low‐Power, Electrochemically Tunable Graphene Synapses for Neuromorphic Computing

Controlled Ionic Tunneling in Lithium Nanoionic Synaptic Transistor through Atomically Thin Graphene Layer for Neuromorphic Computing

A high-performance MoS2 synaptic device with floating gate engineering for Neuromorphic Computing

Structural evolution and on-demand growth of artificial synapses via field-directed polymerization

Dielectric Engineered Two-Dimensional Neuromorphic Transistors

Monolayer MoS2/WO3 Heterostructures with Sulfur Anion Reservoirs As Electronic Synapses for Neuromorphic Computing

Realization of Tunable Artificial Synapse Through Ambipolar Charge Trapping in Organic Transistor with Pentacene/poly(α-Methylstyrene) Architecture

Electret/High-k Solution Dielectric for Low Voltage Synaptic Transistors With Near Linear and Ambipolar Weight Update