Computer Programs Produced by the Planning Group

N. Rochester

DOI: https://doi.org/10.1109/MAHC.1983.10069

1983-04-01

Annals of the History of Computing

Abstract:Here Rochester lists programs developed by the engineering staff.

What problem does this paper attempt to address?

Electron Transport Properties in Coalo Composite Antidot Arrays

Y. G. Ma,H. J. Liu,C. K. Ong

DOI: https://doi.org/10.1209/epl/i2006-10402-4

2006-01-01

Europhysics Letters

Abstract:A complex disordered system composed of composite material and mesoscopic pore arrays was developed by depositing CoAlO composite thin films on the multiporous anodic aluminum oxide (AAO) membranes. In the disordered antidot arrays, self-connectivity of the metallic phase was dependent on the local conduction geometries. This led to locally variable thresholds for electron percolation. Metallic and semiconductor-like conduction behaviors were simultaneously found in the antidot arrays at thickness less than 15 nm, while the reference continuous films only showed metallic behavior. The observed non-monotonous resistance-temperature relations were explained by configuring a tetragonally oriented random resistor network related to the constrained conduction geometries, where electron conductions controlled by both percolation and tunneling coexisted. The tunneling effect was more evidently manifested in an antidot array with increased structural disorders. In this case the temperature dependence of resistance well followed the typical power law mode, exp [const/Tα] with α = 1/2. It was consistent with the characteristic of highly disordered metallic granular systems, where Coulomb charging energy as well as the aluminum oxide barrier would play a key role for electron tunneling between nanometer-sized granules. Our experimental results indicated that electron conductions in a composite antidot array were closely related to its constrained mesoscopic geometries.
Tunable Rapid Electron Transport in Titanium Oxide Thin Films

Runze Li,Faguang Yan,Yongcheng Deng,Yu Sheng

DOI: https://doi.org/10.48550/arXiv.2211.01162

2022-11-02

Abstract:Rapid electron transport in the quantum well triggers many novel physical phenomena and becomes a critical point for the high-speed electronics. Here, we found electrical properties of the titanium oxide changed from semiconducting to metallic as the degree of oxidation decreased and Schottky quantum well was formed at the interface. We take the asymmetry interface electron scattering effect into consideration when studying the electrical transport properties of the multilayer thin films. A novel physical conductivity model for the multilayer thin films was developed. We found electron would be transferred from the low-mobility semiconducting and metallic conductive channels to the high-mobility Schottky quantum well conductive channel with an in-plane applied electric field. Electron concentration and mobility of the forming 2DEG in the Schottky quantum well could be tuned thus the nano-devices exhibited non-linear voltage-current curves. The differential resistivity of the nano-devices could decrease by two orders with increasing electric field at room temperature. Weak electron localization of electrons has been experimentally observed in our nano-devices at low temperature, which further demonstrated the existence of 2DEG in the Schottky quantum well. Our work will provide us new physics about the rapid electron transport in the multilayer thin films, and bring novel functional devices for the modern microelectronic industry.

Applied Physics,Mesoscale and Nanoscale Physics,Materials Science
Current Mapping of Amorphous LaAlO3/SrTiO3 near the Metal-Insulator Transition

Anders V. Bjørlig,Dennis V. Christensen,Ricci Erlandsen,Nini Pryds,Beena Kalisky

DOI: https://doi.org/10.48550/arXiv.2206.15458

2022-06-30

Materials Science

Abstract:The two-dimensional electron system found between LaAlO3 and SrTiO3 hosts a variety of physical phenomena that can be tuned through external stimuli. This allows for electronic devices controlling magnetism, spin-orbit coupling, and superconductivity. Controlling the electron density by varying donor concentrations and using electrostatic gating are convenient handles to modify the electronic properties, but the impact on the microscopic scale, particularly of the former, remains underexplored. Here, we image the current distribution at 4.2 K in amorphous-LaAlO3/SrTiO3 using scanning superconducting-quantum-interference-device microscopy while changing the carrier density in situ using electrostatic gating and oxygen annealing. We show how potential disorder affects the current and how homogeneous 2D flow evolves into several parallel conducting channels when approaching the metal-to-insulator transition. We link this to ferroelastic domains and oxygen vacancies. This has important consequences for micro- and nanoscale devices with low carrier density and fundamental studies on quantum effects in oxides.
Anomalous Transport in Sketched Nanostructures at the LaAlO3/SrTiO3 Interface

Guanglei Cheng,Joshua P. Veazey,Patrick Irvin,Cheng Cen1,Daniela F. Bogorin1,Feng Bi,Mengchen Huang,Shicheng Lu,Chung-Wung Bark,Sangwoo Ryu,Kwang-Hwan Cho,Chang-Beom Eom,Jeremy Levy

DOI: https://doi.org/10.48550/arXiv.1303.1079

2013-03-05

Mesoscale and Nanoscale Physics

Abstract:The oxide heterostructure LaAlO3/SrTiO3 supports a two-dimensional electron liquid with a variety of competing phases including magnetism, superconductivity and weak antilocalization due to Rashba spin-orbit coupling. Further confinement of this 2D electron liquid to the quasi-one-dimensional regime can provide insight into the underlying physics of this system and reveal new behavior. Here we describe magnetotransport experiments on narrow LaAlO3/SrTiO3 structures created by a conductive atomic force microscope lithography technique. Four-terminal local transport measurements on ~10-nm-wide Hall bar structures yield longitudinal resistances that are comparable to the resistance quantum h/e2 and independent of the channel length. Large nonlocal resistances (as large as 10^4 ohms) are observed in some but not all structures with separations between current and voltage that are large compared to the 2D mean-free path. The nonlocal transport is strongly suppressed by the onset of superconductivity below ~200 mK. The origin of these anomalous transport signatures is not understood, but may arise from coherent transport defined by strong spin-orbit coupling and/or magnetic interactions.
Effects of Interface Roughness and Embedded Nanostructures on Device Properties

Ting D. Z.-Y.,Mcgill T. C.,Chen N. Y.,Wang J. N.,Li R. G.,Wang Y. Q.,Ge W. K.,Schulman J. N.

DOI: https://doi.org/10.1557/proc-584-223

1999-01-01

Abstract:We give an overview of the open-boundary planar supercell stack method (OPSSM), as a means for treating 3D quantum transport in mesoscopic tunnel structures. The flexibility of the method allows us to examine a variety of physical phenomena relevant to quantum transport. In this work we focus on the effects of interface roughness and embedded nanostructures in tunnel devices. Four representative applications of OPSSM are discussed: (1) interface roughness in double barrier resonant tunneling structures, (2) self-organized InAs quantum dot insertions in GaAs/AlAs double barrier structures, (3) tunneling characteristics of ultra-thin oxides with interface roughness, and, (4) embedded quantum wire model of dielectric breakdown. These examples demonstrate scattering and localization effects under different biasing conditions.
Exploring Heterointerface Characteristics and Charge-Storage Dynamics in ALD-Developed Ultra-Thin TiO2-In2O3/Au Heterojunctions

Mohammad Karbalaei Akbari,Nasrin Siraj Lopa,Serge Zhuiykov

DOI: https://doi.org/10.3390/coatings14070880

IF: 3.236

2024-07-14

Coatings

Abstract:Directional ionic migration in ultra-thin metal-oxide semiconductors under applied electric fields is a key mechanism for developing various electronic nanodevices. However, understanding charge transfer dynamics is challenging due to rapid ionic migration and uncontrolled charge transfer, which can reduce the functionality of microelectronic devices. This research investigates the supercapacitive-coupled memristive characteristics of ultra-thin heterostructured metal-oxide semiconductor films at TiO2-In2O3/Au Schottky junctions. Using atomic layer deposition (ALD), we nano-engineered In2O3/Au-based metal/semiconductor heterointerfaces. TEM studies followed by XPS elemental analysis revealed the chemical and structural characteristics of the heterointerfaces. Subsequent AFM studies of the hybrid heterointerfaces demonstrated supercapacitor-like behavior in nanometer-thick TiO2-In2O3/Au junctions, resembling ultra-thin supercapacitors, pseudocapacitors, and nanobatteries. The highest specific capacitance of 2.6 × 104 F.g−1 was measured in the TiO2-In2O3/Au junctions with an amorphous In2O3 electron gate. Additionally, we examined the impact of crystallization, finding that thermal annealing led to the formation of crystalline In2O3 films with higher oxygen vacancy content at TiO2-In2O3 heterointerfaces. This crystallization process resulted in the evolution of non-zero I-V hysteresis loops into zero I-V hysteresis loops with supercapacitive-coupled memristive characteristics. This research provides a platform for understanding and designing adjustable ultra-thin Schottky junctions with versatile electronic properties.

materials science, multidisciplinary,physics, applied, coatings & films
Transport abnormity and its modulations via gating effect and light illumination at the SrNbO3/SrTiO(3)interface

Xi Yan,Hui Zhang,Baogen Shen,Fengxia Hu,Jirong Sun

DOI: https://doi.org/10.1088/2053-1591/abba9f

IF: 2.025

2020-01-01

Materials Research Express

Abstract:LaAlO3/SrTiO3-based two-dimensional electron gas (2DEG) has been extensively studied because of its intriguing physical properties and potential application prospect. However, seldom researches have related their extraordinary macroscopic transport phenomena to the microscopic domain structure of SrTiO3. This requires some unique technique like scanning superconducting quantum interference device (SQUID) microscopy. In this work, we developed a different 2DEG system at the interface of SrNbO(3)thin film and SrTiO3. Using only the electrical methods, we found a pronounced hysteresis behavior in the resistance versus temperature curves, marked by the appearance/disappearance of two resistance peaks in the heating/cooling process. In sharp contrast to the conventional gate effect, the resistance peak grows under positive electric biases applied to backgate with conducting interface being grounded. In addition, a weak light (0.04 mW, 405 nm) can completely eliminate the two resistance anomalies. After a systematic analysis, we attribute the resistance anomaly to the cubic-tetragonal transition of bulk SrTiO(3)and surface SrTiO3. The present work presents a promising demonstration to get mesoscopic information on oxide interface via transport behaviors.
The effect of atomic structure on the electrical response of aluminium oxide tunnel junctions

M. J. Cyster,J. S. Smith,J. A. Vaitkus,N. Vogt,S. P. Russo,J. H. Cole

DOI: https://doi.org/10.48550/arXiv.1905.12214

2019-05-29

Mesoscale and Nanoscale Physics

Abstract:Many nanoelectronic devices rely on thin dielectric barriers through which electrons tunnel. For instance, aluminium oxide barriers are used as Josephson junctions in superconducting electronics. The reproducibility and drift of circuit parameters in these junctions are affected by the uniformity, morphology, and composition of the oxide barriers. To improve these circuits the effect of the atomic structure on the electrical response of aluminium oxide barriers must be understood. We create three-dimensional atomistic models of aluminium oxide tunnel junctions and simulate their electronic transport properties with the non-equilibrium Green's function formalism. Increasing the oxide density is found to produce an exponential increase in the junction resistance. In highly oxygen-deficient junctions we observe metallic channels which decrease the resistance significantly. Computing the charge and current density within the junction shows how variation in the local potential landscape can create channels which dominate conduction. An atomistic approach provides a better understanding of these transport processes and guides the design of junctions for nanoelectronics applications.
Conformation-driven quantum interference effects mediated by through-space conjugation in self-assembled monolayers

Marco Carlotti,Andrii Kovalchuk,Tobias Wächter,Xinkai Qiu,Michael Zharnikov,Ryan C. Chiechi

DOI: https://doi.org/10.1038/ncomms13904

IF: 16.6

2016-12-01

Nature Communications

Abstract:Tunnelling currents through tunnelling junctions comprising molecules with cross-conjugation are markedly lower than for their linearly conjugated analogues. This effect has been shown experimentally and theoretically to arise from destructive quantum interference, which is understood to be an intrinsic, electronic property of molecules. Here we show experimental evidence of conformation-driven interference effects by examining through-space conjugation in which π-conjugated fragments are arranged face-on or edge-on in sufficiently close proximity to interact through space. Observing these effects in the latter requires trapping molecules in a non-equilibrium conformation closely resembling the X-ray crystal structure, which we accomplish using self-assembled monolayers to construct bottom-up, large-area tunnelling junctions. In contrast, interference effects are completely absent in zero-bias simulations on the equilibrium, gas-phase conformation, establishing through-space conjugation as both of fundamental interest and as a potential tool for tuning tunnelling charge-transport in large-area, solid-state molecular-electronic devices.

multidisciplinary sciences
Unit‐Cell‐Thickness Electron Confinement by Geometrically Constrained Antipolar Ordering

Yaolong Xing,Jaejin Hwang,Kyeong Tae Kang,Woo Seok Choi,Jaekwang Lee,Sang Ho Oh

DOI: https://doi.org/10.1002/adfm.202406171

IF: 19

2024-05-19

Advanced Functional Materials

Abstract:Unit‐cell‐thickness 2D electron confinement is realized through geometrically constrained antipolar ordering in metallic SrFeO3. Revealed by atomic resolution electron microscopy and density functional theory, electrons are confined two‐dimensionally to screen the positive bound charges on head‐to‐head antipolar phase boundaries. Meanwhile, oxygen vacancies segregated into planar faults compensate the negative bound charges on the tail‐to‐tail ones, stabilizing the antipolar ordering state. Achieving precise electron or spin confinement is essential for the progress of oxide electronics and emerging quantum information processing. While 2D electron confinement is commonly achieved with bare surfaces, heteroepitaxial interfaces, and charged domain walls, its practical application poses challenges, notably by diverse confinement widths, limited material selection, and the lack of freedom of positioning to a desired location within a given material system. Here, with scrutinizing a novel defect structure, the study suggests a new strategy with compelling evidence to trigger electron confinement down to single unit‐cell‐thickness, through geometrically constrained antipolar ordering facilitated by superlattice‐like periodic planar faults in metallic SrFeO3. Employing atomic resolution electron microscopy and density functional theory, the results demonstrate that electrons are confined two‐dimensionally to screen the positive bound charges on head‐to‐head antipolar state boundary, meanwhile oxygen vacancies segregated in the planar faults compensate the negative bound charges on the tail‐to‐tail one, leading to the stabilization of the antipolar ordering. Additionally, distinguished from traditional methods, this approach offers a potential programing capability for achieving precise charge and spin control by regulating planar fault structure at atomic scale.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Disorder-driven localization and electron interactions in thin films

Paul Corbae,Nicolai Taufertshöfer,Ellis Kennedy,Mary Scott,Frances Hellman

DOI: https://doi.org/10.1103/physrevmaterials.8.044204

IF: 3.98

2024-04-26

Physical Review Materials

Abstract:Strong disorder has a crucial effect on the electronic structure in quantum materials by increasing localization, interactions, and modifying the density of states. BixTeI films grown at room temperature and 230K exhibit dramatic magnetotransport effects due to disorder, localization, and electron correlation effects, including a metal-insulator transition at a composition that depends on growth temperature. The increased disorder caused by growth at 230 K causes the conductivity to decrease by several orders of magnitude for several compositions of BixTeI . The transition from metal to insulator with decreasing composition x is accompanied by a decrease in the dephasing length, which leads to the disappearance of the weak-antilocalization effect. Electron-electron interactions cause low temperature conductivity corrections on the metallic side and Efros-Shklovskii variable range hopping on the insulating side, effects which are absent in single crystalline BixTeI . The observation of a tunable metal-insulator transition and the associated strong localization and quantum effects in BixTeI shows the possibility of tuning spin transport in quantum materials via disorder. https://doi.org/10.1103/PhysRevMaterials.8.044204 ©2024 American Physical Society

materials science, multidisciplinary
Enhancing Electron Coherence via Quantum Phonon Confinement in Atomically Thin Nb3SiTe6

J. Hu,X. Liu,C.L. Yue,J.Y. Liu,H.W. Zhu,J. B. He,J. Wei,Z.Q. Mao,L.Yu. Antipina,Z.I.Popov,P.B. Sorokin,T.J. Liu,P.W. Adams,S.M.A Radmanesh,L. Spinu,H. Ji,D. Natelson

DOI: https://doi.org/10.1038/nphys3321

2015-04-02

Abstract:The extraordinary properties of two dimensional (2D) materials, such as the extremely high carrier mobility in graphene and the large direct band gaps in transition metal dichalcogenides MX2 (M = Mo or W, X = S, Se) monolayers, highlight the crucial role quantum confinement can have in producing a wide spectrum of technologically important electronic properties. Currently one of the highest priorities in the field is to search for new 2D crystalline systems with structural and electronic properties that can be exploited for device development. In this letter, we report on the unusual quantum transport properties of the 2D ternary transition metal chalcogenide - Nb3SiTe6. We show that the micaceous nature of Nb3SiTe6 allows it to be thinned down to one-unit-cell thick 2D crystals using microexfoliation technique. When the thickness of Nb3SiTe6 crystal is reduced below a few unit-cells thickness, we observed an unexpected, enhanced weak-antilocalization signature in magnetotransport. This finding provides solid evidence for the long-predicted suppression of electron-phonon interaction caused by the crossover of phonon spectrum from 3D to 2D.

Mesoscale and Nanoscale Physics,Materials Science
Coexistence of high electron-mobility, unpaired spins, and superconductivity at high carrier density SrTiO$_3$-based interfaces

Thor Hvid-Olsen,Christina H. Christoffersen,Damon J. Carrad,Nicolas Gauquelin,Dags Olsteins,Johan Verbeeck,Nicolas Bergeal,Thomas S. Jespersen,Felix Trier

2024-11-06

Abstract:The $t_{2g}$ band-structure of SrTiO$_3$-based two-dimensional electron gasses (2DEGs), have been found to play a role in features such as the superconducting dome, high-mobility transport, and the magnitude of spin-orbit coupling. This adds to the already very diverse range of phenomena, including magnetism and extreme magnetoresistance, exhibited by this particular material platform. Tuning and/or combining these intriguing attributes could yield significant progress within quantum and spintronics technologies. Doing so demands precise control of the parameters, which requires a better understanding of the factors that affect them. Here we present effects of the $t_{2g}$ band-order inversion, stemming from the growth of spinel-structured $\gamma$-Al$_2$O$_3$ onto perovskite SrTiO$_3$. Electronic transport measurements show that with LaAlO$_3$/SrTiO$_3$ as the reference, the carrier density and electron mobility are enhanced, and the sample displays a reshaping of the superconducting dome. Additionally, unpaired spins are evidenced by increasing Anomalous Hall Effect with decreasing temperature, entering the same temperature range as the superconducting transition, and a Kondo-like upturn in the sheet resistance. Finally, it is argued that the high-mobility $d_{xz/yz}$-band is more likely than the $d_{xy}$-band to host the supercurrent.

Materials Science,Strongly Correlated Electrons,Superconductivity
Quantum Effects in Nanostructures

Xu-Cun Ma

DOI: https://doi.org/10.1063/1.5110065

2019-01-01

AIP Conference Proceedings

Abstract:Growth and understanding of novel properties of nanostructures have become one of the most exciting research areas. This is driven by their great potential technological applications and scientific significance to bridge our understanding between atom/molecule and condensed matter physics. The beneficial structural, electronic, optical, magnetic, and chemical properties of nanostructures can be applied in many fields. Using sophisticated experimental techniques (MBE, STM/STS, ARPES, transport), we have explored a diverse set of research topics, including atomic-level control of nanostructure growth, quantum size effects in thin films, interfacial superconductivity, topological insulators, and so on. In this paper, I mainly focus on the quantum size effects in thin films and enhanced high-temperature superconductivity at the interface.
Spontaneous Structural Distortion and Quasi-One-Dimensional Quantum Confinement in A Single-Phase Compound

Zhongchang Wang,Lin Gu,Mitsuhiro Saito,Susumu Tsukimoto,Masaru Tsukada,Frank Lichtenberg,Yuichi Ikuhara,Johannes Georg Bednorz

DOI: https://doi.org/10.1002/adma.201203134

IF: 29.4

2012-01-01

Advanced Materials

Abstract:Oxide heterointerfaces often trigger unusual electronic properties that are absent in respective bulks. Here, direct evidence is offered for spontaneously assembled local structural distortions in a single-phase bulk, which confine electrons to within an atomic layer with notable orbital reconstruction and coupling, close the forbidden band, induce a ferromagnetic ordering, and give rise to a strongly anisotropic, spin-polarized quasi-one-dimensional electron gas.
Conformation Controllable Inelastic Charge Transport and Shot Noise Behavior in Metal-String Single Molecular Devices

Talem Rebeda Roy,Arijit Sen

DOI: https://doi.org/10.1016/j.apsusc.2019.145196

2020-01-22

Abstract:It is often intriguing experimentally to take stock of how conformational changes in the device configuration may impact the overall charge transport behavior of single-molecule junctions. Based on the allied approach of density functional theory and non-equilibrium Green's function formalism, we explore here the effect of junction heterogeneity on inelastic charge transport in various metal-string based single-molecule devices. The constituent active elements being sensitive to the resonant levels, transition metal centers are found to influence stretching, bending, and torsional excitation modes, while rocking and scissoring modes are controlled largely by the axial ligands. For certain molecular conformations and electrode orientations, phonon-assisted quantum interference effect may crop up, leading to the suppression of higher wavenumber vibrational modes. The resulting inelastic spectra are likely to take the shape of dominant Fano resonance or anti-resonance, depending on whether phonons are emitted or absorbed. Such nanoscale quantum interference effect is manifested especially in those metal-string molecular junctions for which the energy gap (between localized and delocalized virtual states) lies well within the optical phonon energies ($\Delta{E}_{|HOMO-LUMO|} <$ 40 meV). It also turns out that single molecular shot noise can exhibit nearly Poissonian behavior if the inter-channel tunneling through frontier orbitals is accompanied by phonon absorption or emission following a slow relaxation process. Our results thus suggest that charge transport properties across metal-string complexes can be potentially tuned by selective architecture of the metal centers and also, by preferred orientation of nanoscale electrodes in a bid to build up molecular devices with desirable controllability.

Mesoscale and Nanoscale Physics,Computational Physics
Quantum Confinement Induced Oscillatory Electric Field on a Stepped Pb(111) Film and Its Influence on Surface Reactivity

Xiaojie Liu,Cai-Zhuang Wang,Myron Hupalo,Hai-Qing Lin,Kai-Ming Ho,Michael C. Tringides

DOI: https://doi.org/10.1103/physrevb.89.041401

2014-01-01

Abstract:When the thickness of ultrathin metal films approaches the nanometer scale comparable to the coherence length of the electrons, significant effects on the structure stability and the electronic properties of the metal films emerge due to electron confinement and quantization of the allowed electronic states in the direction perpendicular to the film. Using first-principles calculations, we showed that such quantum size effects can induce oscillatory electrostatic potential and thus alternating electric field on the surface of the wedge-shaped Pb(111) films. The alternating electric field has significant influence on surface reactivity, leading to selective even- or odd-layer adsorption preference depending on the charge state of the adatoms, consistent with the odd-layer preference of higher Mg coverage on wedge-shaped Pb(111) films, as observed in experiment.
Tuning the electrical conductance of oligo(phenylene-ethynylene) derivatives-PbS quantum-dot bilayers

Ali Ismael,Xintai Wang,Alaa Al-Jobory,Shanglong Ning,Turki Alotaibi,Bashayr Alanazi,Hanan Althobaiti,Junsheng Wang,Naixu Wei,Christopher J. B. Ford,Colin J. Lambert

DOI: https://doi.org/10.1039/d4tc00478g

IF: 6.4

2024-08-09

Journal of Materials Chemistry C

Abstract:Transcribing quantum effects from lower to higher dimensions is a complex yet intriguing area of research. Coulomb blockade (CB), a fundamental quantum phenomenon, is commonly observed in low-dimensional materials like quantum dots (QDs) at extremely low temperatures. This behavior shows promise for the development of high-performance memory and thermoelectric devices. However, when transitioning to larger dimensions, such as arrays at room temperature, the CB effect is hindered by thermal fluctuations and structural inconsistencies. This study presents a thorough examination of electron transport through PbS QDs using a blend of experimental and theoretical methods. By creating a sizable parallel array of QDs immobilized on self-assembled monolayers (SAMs) and employing single-layer graphene (SLG) as the top electrode, we were able to maintain the CB effect at room temperature on a device scale. Additionally, a device with a top gate structure was designed to precisely regulate the energetic position of quantum states in relation to the Fermi level of the electrode. By utilizing ultra-small QDs (typically 2 nm in size), we successfully sustained the CB effect at room temperature. To investigate the impact of structural uncertainties, we combined density-functional theory and quantum transport theory to comprehensively analyze the quantum transport properties of QDs bound with SAMs across various facets. This enabled us to establish a correlation between these structural variations and the experimental data distribution.

materials science, multidisciplinary,physics, applied
Tunable Interaction-Induced Localization of Surface Electrons in Antidot Nanostructured Bi2Te3 Thin Films

Hong-Chao Liu,Hai-Zhou Lu,Hong-Tao He,Baikui Li,Shi-Guang Liu,Qing Lin He,Gan Wang,Iam Keong Sou,Shun-Qing Shen,Jiannong Wang

DOI: https://doi.org/10.1021/nn504014e

IF: 17.1

2014-01-01

ACS Nano

Abstract:Recently, a logarithmic decrease of conductivity has been observed in topological insulators at low temperatures, implying a tendency of localization of surface electrons. Here, we report quantum transport experiments on the topological insulator Bi2Te3 thin films with arrayed antidot nanostructures. With increasing density of the antidots, a systematic decrease is observed in the slope of the logarithmic temperature-dependent conductivity curves, indicating the electron-electron interaction can be tuned by the antidots. Meanwhile, the weak antilocalization effect revealed in magnetoconductivity exhibits an enhanced dominance of electron-electron interaction among decoherence mechanisms. The observation can be understood from an antidot-induced reduction of the effective dielectric constant, which controls the interactions between the surface electrons. Our results clarify the indispensable role of the electron-electron interaction in the localization of surface electrons and indicate the localization of surface electrons in an interacting topological insulator.
Charge transfer driven emergent phenomena in oxide heterostructures

Hanghui Chen,Andrew J. Millis

DOI: https://doi.org/10.1088/1361-648X/aa6efe

2017-05-19

Abstract:Complex oxides exhibit many intriguing phenomena, including metal-insulator transition, ferroelectricity/multiferroicity, colossal magnetoresistance and high transition temperature superconductivity. Advances in epitaxial thin film growth techniques enable us to combine different complex oxides with atomic precision and form an oxide heterostructure. Recent theoretical and experimental work has shown that charge transfer across oxide interfaces generally occurs and leads to a great diversity of emergent interfacial properties which are not exhibited by bulk constituents. In this report, we review mechanisms and physical consequence of charge transfer across interfaces in oxide heterostructures. Both theoretical proposals and experimental measurements of various oxide heterostructures are discussed and compared. We also review the theoretical methods that are used to calculate charge transfer across oxide interfaces and discuss the success and challenges in theory. Finally, we present a summary and perspectives for future research.

Strongly Correlated Electrons

Computer Programs Produced by the Planning Group

Electron Transport Properties in Coalo Composite Antidot Arrays

Tunable Rapid Electron Transport in Titanium Oxide Thin Films

Current Mapping of Amorphous LaAlO3/SrTiO3 near the Metal-Insulator Transition

Anomalous Transport in Sketched Nanostructures at the LaAlO3/SrTiO3 Interface

Effects of Interface Roughness and Embedded Nanostructures on Device Properties

Exploring Heterointerface Characteristics and Charge-Storage Dynamics in ALD-Developed Ultra-Thin TiO2-In2O3/Au Heterojunctions

Transport abnormity and its modulations via gating effect and light illumination at the SrNbO3/SrTiO(3)interface

The effect of atomic structure on the electrical response of aluminium oxide tunnel junctions

Conformation-driven quantum interference effects mediated by through-space conjugation in self-assembled monolayers

Unit‐Cell‐Thickness Electron Confinement by Geometrically Constrained Antipolar Ordering

Disorder-driven localization and electron interactions in thin films

Enhancing Electron Coherence via Quantum Phonon Confinement in Atomically Thin Nb3SiTe6

Coexistence of high electron-mobility, unpaired spins, and superconductivity at high carrier density SrTiO$_3$-based interfaces

Quantum Effects in Nanostructures

Spontaneous Structural Distortion and Quasi-One-Dimensional Quantum Confinement in A Single-Phase Compound

Conformation Controllable Inelastic Charge Transport and Shot Noise Behavior in Metal-String Single Molecular Devices

Quantum Confinement Induced Oscillatory Electric Field on a Stepped Pb(111) Film and Its Influence on Surface Reactivity

Tuning the electrical conductance of oligo(phenylene-ethynylene) derivatives-PbS quantum-dot bilayers

Tunable Interaction-Induced Localization of Surface Electrons in Antidot Nanostructured Bi2Te3 Thin Films

Charge transfer driven emergent phenomena in oxide heterostructures