Large-area vertically stacked MoTe2/β-Ga2O3 p-n heterojunction realized by PVP/PVA assisted transfer

Yifan Xiao,Wenjun Liu,Chaochao Liu,Hongyu Yu,Huan Liu,Jun Han,Weiguo Liu,Wenfeng Zhang,Xiaohan Wu,Shijin Ding,Zheng Liu,David Wei Zhang
DOI: https://doi.org/10.1016/j.apsusc.2020.147276
IF: 6.7
2020-11-01
Applied Surface Science
Abstract:Beta phase gallium oxide (β-Ga2O3) has attracted wide attention due to its unique material property; however, the lack of p-type doping hinders its practical application. Here, we report a 2H-MoTe2/β-Ga2O3 ( 2 - 01 ) vertical p-n heterojunction diode via chemical vapor deposition, which exhibited excellent rectification characteristics with a rectifying ratio of 105, and an on-current density of up to 1 mA/cm2. The depletion comes from strain-free interface of the 2H-MoTe2 and β-Ga2O3 ( 2 - 01 ) by van der Waals force. The band offsets and the interface element distribution of the heterojunction were investigated by the X-ray photoelectron spectroscopy and transmission electron microscope. The valence and conduction band offsets between the 2H-MoTe2 and β-Ga2O3 were consequently determined to be 0.16 eV and 3.56 eV, with a nested gap (type I) band alignment. Moreover, an abnormal build-in potential was observed in the 2H-MoTe2/β-Ga2O3 p-n heterojunction diode which could be attributed to the formation of an interfacial layer of MoOX. These observations in the 2H-MoTe2/β-Ga2O3 heterojunction show the great potential in optoelectronic devices.
chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
What problem does this paper attempt to address?
The problem that this paper attempts to solve is the limitation of β - Ga₂O₃ materials in practical applications due to the lack of effective p - type doping. Specifically, as a material with unique material properties, β - Ga₂O₃ has attracted wide attention in fields such as power electronic devices, photodetectors and gas sensors because of its ultra - wide band gap (4.6 - 4.9 eV). However, the difficulty in obtaining p - type conductivity through doping has hindered its wide application in practice. For this reason, researchers prepared a 2H - MoTe₂/β - Ga₂O₃ vertical p - n heterojunction diode by chemical vapor deposition (CVD) in order to overcome this problem. This study shows that this heterojunction diode has excellent rectification characteristics, with a rectification ratio exceeding 10⁵ and a forward current density as high as 1 mA/cm², and also analyzes in detail the properties of the heterojunction interface, including energy band offset and interface element distribution, etc., revealing the great potential of this heterojunction in optoelectronic device applications.