Abstract:Atomically thin two-dimensional (2D) semiconductors such as molybdenum disulphide (MoS2) hold great promise in electrical, optical, and mechanical devices and display novel physical phenomena such as coupled spin-valley physics and the valley Hall effect. However, the electron mobility of mono- and few-layer MoS2 has so far been substantially below theoretically predicted limits, particularly at low temperature (T), which has hampered efforts to observe its intrinsic quantum transport behaviors. Potential sources of disorder and scattering include both defects such as sulfur vacancies in the MoS2 itself, and extrinsic sources such as charged impurities and remote optical phonons from oxide dielectrics. To reduce extrinsic scattering and approach the intrinsic limit, we developed a van der Waals (vdW) heterostructure device platform where MoS2 layers are fully encapsulated within hexagonal boron nitride (hBN), and electrically contacted in a multi-terminal geometry using gate-tunable graphene electrodes. Multi-terminal magneto-transport measurements show dramatic improvements in performance, including a record-high Hall mobility reaching 34,000 cm2/Vs for 6-layer MoS2 at low T. Comparison to theory shows a decrease of 1-2 orders of magnitude in the density of charged impurities, indicating that performance at low T in previous studies was limited by extrinsic factors rather than defects in the MoS2. We also observed Shubnikov-de Haas (SdH) oscillations for the first time in high-mobility monolayer and few-layer MoS2. This novel device platform therefore opens up a new way toward measurements of intrinsic properties and the study of quantum transport phenomena in 2D semiconducting materials.

Temperature-Dependent Electronic Ground-State Charge Transfer in van der Waals Heterostructures

Tunable Two-Dimensional Interfacial Coupling in Molecular Heterostructures

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Charge Transfer Effects in Naturally Occurring van der Waals Heterostructures (PbSe)_{1.16}(TiSe_{2})_{m} (m=1, 2).

Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction

Ultrafast dynamics of charge transfer in CVD grown MoS2-graphene heterostructure

Manipulating Charge and Energy Transfer Between 2D Atomic Layers Via Heterostructure Engineering

Phonon-coupled Ultrafast Interlayer Charge Oscillation at Van Der Waals Heterostructure Interfaces

Electronic Cooling Via Interlayer Coulomb Coupling in Multilayer Epitaxial Graphene

Toward an Understanding of the Electric Field-Induced Electrostatic Doping in van der Waals Heterostructures: A First-Principles Study

A doping-dependent switch from one- to two-component superfluidity at temperature above 100K in coupled electron-hole Van der Waals heterostructures

Unraveling energy and charge transfer in type-II van der Waals heterostructures

Possible charge ordering and anomalous transport in graphene/graphene quantum dot heterostructure

Thermodynamic behavior of correlated electron-hole fluids in van der Waals heterostructures

Charge Transfer in Graphene-MoS 2 Vertical Heterostructures Tuned by Stacking Order and Substrate-Introduced Electric Field

Interlayer charge transfer induced by electronic instabilities in the natural van der Waals hetrostructure 4H$_b$-TaS$_2$

Van der Waals hetrostructure configuration effect on exciton and thermoelectric characteristics

Excitonic Effect Drives Ultrafast Dynamics in Van Der Waals Heterostructures.

Possible charge ordering and anomalous transport in graphene/graphene quantum dotheterostructure

Multi-terminal electrical transport measurements of molybdenum disulphide using van der Waals heterostructure device platform

Enhanced Conductivity Along Lateral Homojunction Interfaces of Atomically Thin Semiconductors