Abstract:The ultrafast charge transfer in vertically stacked van der Waals transition-metal dichalcogenide (TMD) heterostructures shows enormous value in the fields of optoelectronics and solar energy conversion. Compared to vertical TMD heterostructures, the lateral (in-plane) heterostructures have stronger interaction between different TMD materials due to the formation of covalent bonds, which is more conducive to charge transfer. To understand the charge transfer dynamics in lateral TMD heterostructure, we employ ab initio nonadiabatic molecule dynamics to simulate the photoexcited electron transfer in lateral MoS2/WS2 heterostructure. Our study shows that the type-II band alignment can be formed in MoS2/WS2 at zero temperature. However, because the band offset of valence band maximum (VBM) is as small as 0.1 eV, the VBM of MoS2 and WS2 cross each other frequently when the temperature is increased to 100 or 300 K. In these cases, the phonon excitation destroys the type-II band alignment and makes the hole transfer to be difficult. By contrast, the band offset of conduction band minimum is kept with phonon excitation and our investigation shows that the electron transfer can happen in an ultrafast manner and the dynamics are independent of the interface structures. Comparing with the vertical MoS2/WS2 heterostructure, the nonadiabatic electron transfer can happen faster in lateral heterostructure because of the stronger orbital hybridization. Our investigation on lateral MoS2/WS2 heterostructures provide unique insights into the ultrafast charge transfer dynamics at lateral TMD interface at atomic scale, which have potential applications for the design of novel 2D devices for optoelectronics and clean energy.

Excitonic Effect Drives Ultrafast Dynamics in Van Der Waals Heterostructures.

Robust Stacking-Independent Ultrafast Charge Transfer in MoS2/WS2 Bilayers

Unraveling energy and charge transfer in type-II van der Waals heterostructures

Phonon-Assisted Ultrafast Charge Transfer at van der Waals Heterostructure Interface.

Ultrafast Electron Transfer Dynamics in Lateral Transition-Metal Dichalcogenide Heterostructures

Phonon-coupled Ultrafast Interlayer Charge Oscillation at Van Der Waals Heterostructure Interfaces

Exciton-Phonon Coupling Induces a New Pathway for Ultrafast Intralayer-to-Interlayer Exciton Transition and Interlayer Charge Transfer in WS 2 -MoS 2 Heterostructure: A First-Principles Study

Excitonic Effect Drives Ultrafast Transition in Two-Dimensional Transition Metal Dichalcogenides.

Ultrafast formation of interlayer hot excitons in atomically thin MoS 2 /WS 2 heterostructures

Bidirectional phonon emission in two-dimensional heterostructures triggered by ultrafast charge transfer

Excitonic interactions and mechanism for ultrafast interlayer photoexcited response in van der Waals heterostructures

Ultrafast Formation of Interlayer Hot Excitons in Atomically Thin MoS2/WS2 Heterostructures

Exciton-phonon coupling induces new pathway for ultrafast intralayer-to-interlayer exciton transition and interlayer charge transfer in WS2-MoS2 heterostructure: a first-principles study

New Theoretical Insights into the Photoinduced Carrier Transfer Dynamics in WS2/WSe2 Van Der Waals Heterostructures

Long-Range Hot Charge Transfer Exciton Dissociation in an Organic/2D Semiconductor Hybrid Excitonic Heterostructure

Van der Waals engineering of ultrafast carrier dynamics in magnetic heterostructures

Ultrafast Charge Transfer in Atomically Thin MoS2/WS2 Heterostructures

Strong interlayer coupling and long-lived interlayer excitons in two-dimensional perovskite derivatives and transition metal dichalcogenides van der Waals heterostructures

Interlayer Exciton Dynamics of Transition Metal Dichalcogenide Heterostructures under Electric Fields

Tunable ultrafast electron transfer in WSe2-graphene heterostructures enabled by atomic stacking order

Ultrafast Electronic Dynamics in Anisotropic Indirect Interlayer Excitonic States of Monolayer WSe2/ReS2 Heterojunctions.