Abstract:Band Inversions happen in various topological materials. However, the mechanism of band inversion usually involves banding folding effects. Here, the chemical origin of topological phase transition via complex hybridization effects is discussed. Overall, this work paints a picture of a possible magnetic topological insulator via band engineering and explains why Eu‐based Zintl compounds are suitable for the co‐existence of magnetism and topology. While ∼30% of materials are reported to be topological, topological insulators are rare. Magnetic topological insulators (MTI) are even harder to find. Identifying crystallographic features that can host the coexistence of a topological insulating phase with magnetic order is vital for finding intrinsic MTI materials. Thus far, most materials that are investigated for the determination of an MTI are some combination of known topological insulators with a magnetic ion such as MnBi2Te4. Motivated by the recent success of EuIn2As2, the role of chemical pressure on topologically trivial insulator is investigated, Eu5In2Sb6 via Ga substitution. Eu5Ga2Sb6 is predicted to be topological but is synthetically difficult to stabilize. The intermediate compositions between Eu5In2Sb6 and Eu5Ga2Sb6 are observed through theoretical works to explore a topological phase transition and band inversion mechanism. The band inversion mechanism is attributed to changes in Eu–Sb hybridization as Ga is substituted for In due to chemical pressure. Eu5In4/3Ga2/3Sb6 is also synthesized, the highest Ga concentration in Eu5In2‐xGaxSb6, and report the thermodynamic, magnetic, transport, and Hall properties. Overall, the work paints a picture of a possible MTI via band engineering and explains why Eu‐based Zintl compounds are suitable for the co‐existence of magnetism and topology.

Topotaxial mutual-exchange growth of magnetic Zintl Eu 3 In 2 As 4 nanowires with axion insulator classification

Topotaxial Mutual-Exchange Growth of Magnetic Zintl Eu$_3$In$_2$As$_4$ Nanowires with Axion Insulator Classification

MBE growth of axion insulator candidate EuIn2As2

Molecular beam epitaxy growth of axion insulator candidate

Exploring Intrinsic Magnetic Topological Insulators: The Case of EuIn$_2$As$_2$

Topological States and Interplay Between Spin-Orbit and Zeeman Interactions in a Spinful Su-Schrieffer-Heeger Nanowire

Single-crystal growth, structure and thermal transport properties of the metallic antiferromagnet Zintl-phase β-EuIn2As2

In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices

Unusual Magnetic and Transport Properties in the Zintl Phase Eu_11Zn_6As_12

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Bonding Interactions Can Drive Topological Phase Transitions in a Zintl Antiferromagnetic Insulator

Phase Selection Enabled Formation of Abrupt Axial Heterojunctions in Branched Oxide Nanowires.

Intertwined topological phases in TaAs2 nanowires with giant magnetoresistance and quantum coherent surface transport

From Twinning to Pure Zincblende Catalyst-Free Inas(Sb) Nanowires

Unusual magnetic and transport properties in the Zintl phase Eu$_{11}$Zn$_6$As$_{12}$

Dynamic Process of Phase Transition from Wurtzite to Zinc Blende Structure in InAs Nanowires.

Incommensurate magnetic order in an axion insulator candidate EuIn 2 As 2 investigated by NMR measurement

<i>In Situ</i> Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices

Incommensurate magnetic order in an axion insulator candidate EuIn$_2$As$_2$ investigated by NMR measurement

Crystal Phase- and Orientation-Dependent Electrical Transport Properties of InAs Nanowires