[The clinical picture in bronchial tuberculosis].

G. Fegiz

1950-07-22

Abstract:

What problem does this paper attempt to address?

Passivation of Grain Boundaries and Defects in CZTSSe Solar Cells by In Situ Na Doping

Liangzheng Dong,Shengye Tao,Ming Zhao,Daming Zhuang,Qianming Gong,Hongwei Zhu,Yafei Wang,Yuxian Li,Hanpeng Wang,Mengyao Jia,Jing Li

DOI: https://doi.org/10.1002/solr.202300061

IF: 9.1726

2023-01-01

Solar RRL

Abstract:Alkali metal doping plays a great role in improving the efficiency of Cu2SnZn(S, Se)(4) (CZTSSe) thin film solar cells. However, it is unclear how to realize the ideal distribution of alkali metal in CZTSSe films. Meanwhile, the mechanisms of alkali metal doping are still controversial. Herein, Na-doped CZTSSe cells are fabricated by magnetron sputtering with Na-containing Cu2SnZnS4 target which is in situ doping and annealing in selenization atmosphere. The incorporation of Na enhances the diffusion of K from the substrates to the absorbers. Na doping can increase the contact potential at the grain boundaries, which has beneficial effects on reducing the carrier recombination at the grain boundaries. Furthermore, Na incorporation modifies the conduction band offset at the CdS/CZTSSe interface from -0.07 to 0.03 eV. The defects and recombination in different regions are quantitatively extracted. It is demonstrated that the optimized grain boundary electrical properties and the heterojunction band alignment passivate the defects of the depletion region, the heterojunction interface, and the quasineutral region. Finally, a total-area efficiency of 11.18% has been achieved in CZTSSe solar cell with an in situ Na doping concentration of 0.6 at%.
Doping Behavior of Zn in CdS and Its Effect on the Power Conversion Efficiency of the Cu2ZnSn(S, Se)4 Solar Cell

Jiayong Zhang,Ting Wang,Bin Yao,Zhanhui Ding,Yongfeng Li,Chunkai Wang,Jia Liu

DOI: https://doi.org/10.1021/acs.jpcc.1c08579

2021-01-01

Abstract:High carrier recombination at the Cu2ZnSn (S, Se)(4)(CZTSSe)/CdS interface is the critical issue that results in the low power conversion efficiency (PCE) of CZTSSe solar cells. To reduce the recombination by optimizing the CZTSSe/CdS interfacial structure, we fabricated a Zn doped CdS (ZnxCd1-xS) thin film with x of 0-0.32 and a CZTSSe solar cell with the ZnxCd1-xS as the buffer layer. It is found that Zn substitutes for Cd in the x range of 0-0.26 and that some of the Zn substitutes for Cd and another Zn locates in the interstitial site of the CdS lattice in the x range of 0.26-0.32, which make the lattice mismatch between CZTSSe and ZnxCd1-xS decrease in x of 0-0.26 and increase in x of 0.26-0.32. The conduction band offset at the CZTSSe/ZnxCd1-xS interface is demonstrated by XPS to be a positive "spike"-like type and increases from 0.11 to 0.43 eV as x increases from 0 to 0.32. PCE is increased from 5.00 to 7.73% by optimizing x. The increased PCE is attributed to increased opencircuit voltage (V-OC) and filling factor (FF), while the decreased PCE is due to decreased V-OC, FF, and J(SC). By using quantitative analysis methods, the increased V-OC and FF are mainly attributed to the increased shunt resistance (R-sh) and decreased reverse saturation current density (J(0)), and the decreased short-circuit current density (J(SC)) is attributed to the increased conduction band offset (CBO). The influence mechanism of Zn doping on R-sh, J(0), and CBO is discussed.
Unlocking the Effects of Cu Doping in Heavy-Metal-free AgIn5S8 Quantum Dots for Highly Efficient Photoelectrochemical Solar Energy Conversion

Heng Guo,Jiabin Liu,Bing Luo,Xu Huang,Jian Yang,Haiyuan Chen,Li Shi,Xin Liu,Daniele Benetti,Ying Zhou,Gurpreet Singh Selopal,Federico Rosei,Zhiming Wang,Xiaobin Niu

DOI: https://doi.org/10.1039/d1tc01624e

IF: 6.4

2021-01-01

Journal of Materials Chemistry C

Abstract:A colloidal quantum dot photoelectrochemical cell based on a Cu-doped AgIn5S8-photoanode exhibits promising photoelectrochemical activity for high-efficiency hydrogen production due to the Cu-doping effect.
Synergetic Effects of Zn Alloying and Defect Engineering on Improving the CdS Buffer Layer of Cu2ZnSnS4 Solar Cells

Liangli Chu,Jinping Zhang,Huiwen Xiang,Sixin Wu,Yu Jia,Chengyan Liu

DOI: https://doi.org/10.1021/acs.inorgchem.2c01575

2022-08-08

Abstract:The inferior electrical properties at the interface of the Cu2ZnSnS4/CdS (CZTS/CdS) heterojunction resulting in the severe loss of open-circuit voltage (Voc) highly restrict the photovoltaic efficiency of CZTS solar cell devices. Here, first-principles calculations show that the Zn-alloyed CdS buffer layer reverses the unfavorable cliff-like conduction band offset (CBO) of CZTS/CdS to the desirable spike-like CBO of CZTS/Zn0.25Cd0.75S, which suppresses carrier nonradiative recombination and blocks electron backflow. In addition, the weakened n-type conductivity of Zn0.25Cd0.75S can be enhanced by In, Ga, and Cl doping without the introduction of detrimental deep-level defects and severe band-tail states, which improves the Voc of CZTS solar cells by promoting strong band bending and large quasi-Fermi-level splitting at the absorber side of the CZTS/Zn0.25Cd0.75S heterojunction. This study finds that the synergetic effects of Zn alloying and defect engineering on the CdS buffer layer are promising for overcoming the long-standing issue of the Voc deficit in CZTS solar cells, and understanding the optimized interfacial electrical properties provides theoretical guidance for improving the efficiency of semiconductor devices.
Synergistic Recombination Suppression by an Inorganic Layer and Organic Dye Molecules in Highly Photostable Quantum Dot Sensitized Solar Cells.

Heping Shen,Jianbao Li,Lin Zhao,Shanshan Zhang,Wenli Wang,Dan Oron,Hong Lin

DOI: https://doi.org/10.1039/c3cp54954b

IF: 3.3

2014-01-01

Physical Chemistry Chemical Physics

Abstract:An inorganic layer and dye molecules have synergistically suppressed the recombination in a quantum dot sensitized solar cell (QDSSC), by the design of a structure featured TiO2-CdS-ZnS-N3 (N3: RuL2(NCS)2 (L = 2,2'-bipyridyl-4,4'-dicarboxylic acid)) hybrid photoanode. When fabricated into solar cells, a cobalt complex-based electrolyte rather than an iodine-based one was employed to obtain an impressive photostability for the devices. Raman and Photoluminescence (PL) measurements revealed that not only the CdS QDs were passivated by both the inorganic layer of ZnS and dye molecule of N3, but also N3 served as an efficient hole scavenger for the CdS QDs due to a type-II energetic alignment between the two sensitizers. This role of N3 as an intermediary in hole extraction from CdS QDs to the electrolyte was further proven by the significant photovoltaic performance improvement of the CdS sensitized solar cell after ZnS deposition and N3 co-sensitization. The overall efficiency of the solar cell incorporated with TiO2-CdS-ZnS-N3 film exceeded the sum of the single CdS QDs and N3 dye sensitized solar cells. This enhancement is ascribed mainly to the synergistic recombination suppression by the inorganic layer ZnS and N3 co-sensitization, leading to inhibited recombination and increased electron lifetime, as illustrated by the electrochemical impedance spectroscopy (EIS) analysis.
Effect of Na doping on the performance and the band alignment of CZTS/CdS thin film solar cell

Bin Liu,Jie Guo,Ruiting Hao,Lu Wang,Kang Gu,Shuaihui Sun,Abuduwayiti Aierken

DOI: https://doi.org/10.1016/j.solener.2020.02.088

IF: 7.188

2020-05-01

Solar Energy

Abstract:Alkali doping can suppress deleterious antisite defects in kesterite Cu2ZnSnS4 (CZTS) and improve the open-circuit voltage. In this study, the effects of light Na-doping on the performance and the band alignment of CZTS/CdS thin-film solar cells were investigated. CZTS:Na thin films were fabricated by the spin coating with 10% Na doping on the surface of CZTS. The Na-doping led to the narrower FWHM and larger grain size. The hole concentration and the conductivity were improved due to the NaZn shallow acceptor defects. In addition, Na-doping can improve the band alignment of absorber/buffer interface and inhibit SRH recombination by the Na passivation effect and the suppression of SnZn defects. The typical cliff-like conduction band offset (CBO) was reduced from 0.25 eV in CZTS:Na/CdS to 0.1 eV in CZTS/CdS heterojunction. CZTS:Na device exhibited a higher Voc of 653 mV than that of CZTS/CdS device. The maximum conversion efficiency reached 7.46%, increased by 44% after Na-doping. These results clarify the effect of Na-doping on the band structure of the heterojunction in CZTS solar cells and support a new aspect that synthesis of a surface-doping CZTS:Na absorber has great potential for future research.

energy & fuels
Strategy for Performance Enhancement of Cd1-XZnXTe/CdS Core/shell Quantum Dot Sensitized Solar Cells Through Band Adjustment

Wangwei Lu,Bin Song,Huazheng Li,Jing Zhou,Weixia Dong,Gaoling Zhao,Gaorong Han

DOI: https://doi.org/10.1016/j.jallcom.2020.154050

IF: 6.2

2020-01-01

Journal of Alloys and Compounds

Abstract:Novel type-II core/shell structure quantum dos have been synthesized for solar cell photoelectrode material. Cd0.64Zn0.36Te and CdS were chosen as a core and shell, respectively, to generate type-II core/shell structure quantum dos (QDs). Density functional theory was employed to explore the energy structure of Cd1-xZnxTe/CdS core/shell QDs, revealing that introduction of Zn element is a feasible strategy to prepare CdTe/CdS based QDs with type-II core/shell structure. Then, Cd0.64Zn0.36Te/CdS core/shell QDs were synthesized by aqueous phase method. Microscopic measurements showed that Cd0.64Zn0.36Te/CdS core/shell QDs have high crystalline quality. Ultraviolet photoelectron spectroscopy together with optical spectra indicated an upward shift of the Cd0.64Zn0.36Te conduction band edge compared with CdTe, as also evidenced by systematic density functional theory based first principle calculation. Photoluminescence decay measurement also indicated the enhanced electron injection rate and decreased charge recombination of Cd0.64Zn0.36Te/CdS QD sensitized TiO2 films. In addition, by optimizing the deposition cycles of the CdS shell, the power conversion efficiency of Cd0.64Zn0.36Te/CdS QDs sensitized solar cells was enhanced.
The Design of Mn2+&Co2+ Co-Doped CdTe Quantum Dot Sensitized Solar Cells with Much Higher Efficiency.

Huazheng Li,Wangwei Lu,Bin Song,Jing Zhou,Gaoling Zhao,Gaorong Han

DOI: https://doi.org/10.1039/d0ra06381a

IF: 4.036

2020-01-01

RSC Advances

Abstract:High quality Mn2+-doped CdTe quantum dots (QDs), Co2+-doped CdTe QDs and Mn2+&Co2+ co-doped CdTe QDs were successfully synthesized via an aqueous phase method with mercaptopropanoic acid (MPA) ligands. The doped QDs maintain the same zinc blende structure of CdTe by X-ray diffraction (XRD). The Mn2+-doped CdTe QDs and Co2+-doped CdTe QDs both show a red-shift on absorption and photoluminescence (PL) spectra compared to pure CdTe QDs. In addition, Mn2+-doped CdTe QDs show a significant increase in the PL lifetime due to an orbitally forbidden d-d transition, which is of benefit to the reduction of electron recombination loss. Co2+ doping has a more matched doping energy level. In view of this, Mn2+&Co2+ co-doped CdTe QDs were applied as sensitizers for quantum dot sensitized solar cells, resulting in a significantly enhanced efficiency.
Isolated renal haemangioma in children: presentation and management

S. Akel,A. Rassi,A. Tawil,S. Musallam,M. Makhlouf Akel

DOI: https://doi.org/10.1046/j.1464-410X.2002.02890.x

2002-10-31

BJU International

Abstract:A 28-day-old baby boy presented with progressive jaundice and pallor of 3 weeks’ duration. On examination he had moderate abdominal distension with a large rightsided firm immobile abdominal mass reaching the right iliac fossa. Laboratory studies showed severe anaemia (haemoglobin 52 mg/L), thrombocytopenia (platelet count 26 000/ μ L) and unconjugated hyperbilirubinaemia (total/direct bilirubin 193/7mg/L); Coombs test was negative. CT of the abdomen revealed a 10 × 7.5 × 5.5 cm heterogeneous mass arising from the right kidney, with areas of increased density suggestive of acute haemorrhage (Fig. 1). This large tumour was consistent with Wilms’ tumour although mesoblastic nephroma was another possibility. The patient underwent emergency right nephrectomy. The kidney contained a 6.5 × 6.0 × 4.5 cm mass, the inner edge of which abutted the renal pelvis without invading it. The outer aspect of the mass compressed the surrounding renal cortex. The overlying renal capsule was focally ruptured and there was extensive haemorrhage into the perirenal fat. The cut surface of the mass was dark brown and friable, and the bulk of it appeared to be composed of clotted blood (Fig. 2). Microscopy of the mass revealed a cavernous haemangioma with extensive intratumoral and perirenal haemorrhage. Identifiable features of haemangioma were limited to a thin rim along the interface between the mass and normal renal tissue. They consisted of anastomosing vascular spaces separated by a scant connective tissue stroma, as well as large cystic spaces containing clotted blood (Fig. 3a). Entrapped normal tubules were occasionally seen within the stroma (Fig. 3b). The cells lining the vascular spaces were benign and expressed endothelial markers (factor VIII and CD34). Extensive sampling of the mass showed no evidence of malignancy. The patient had an uneventful postoperative course, and normal haematological and biochemical profiles upon discharge from hospital. Fig. 1. CT of the abdomen showing a large heterogeneous mass arising from the upper pole of the right kidney and displacing the rest of the renal parenchyma medially, associated with areas suggestive of acute haemorrhage and necrosis.
Controlling charge separation and recombination rates in CdSe/ZnS type I core-shell quantum dots by shell thicknesses.

Haiming Zhu,Nianhui Song,Tianquan Lian

DOI: https://doi.org/10.1021/ja106710m

IF: 15

2010-01-01

Journal of the American Chemical Society

Abstract:Type I core/shell quantum dots (QDs) have been shown to improve the stability and conversion efficiency of QD-sensitized solar cells compared to core only QDs. To understand how the shell thickness affects the solar cell performance, its effects on interfacial charge separation and recombination kinetics are investigated. These kinetics are measured in CdSe/ZnS type I core/shell QDs adsorbed with anthroquinone molecules (as electron acceptor) by time-resolved transient absorption spectroscopy. We show that the charge separation and recombination rates decrease exponentially with the shell thickness (d), K(d) = k(0)e(-beta d), with exponential decay factors beta of 0.35 +/- 0.03 per angstrom and 0.91 +/- 0.14 per angstrom, respectively. Model calculations show that these trends can be attributed to the exponential decrease of the 1S electron and hole densities at the OD surface with the shell thickness. The much steeper decrease in charge recombination rate results from a larger hole effective mass (than electron) in the ZnS shell. This finding suggests possible ways of optimizing the charge separation yield and lifetime by controlling the thickness and nature of the shell materials.
Promoting solution-processed CdTe nanocrystal solar cells by rationally controlled copper doping

Qichuan Huang,Songwei Liu,Chenbo Min,Zheng Zhou,Donghuan Qin,Dan Wang,Wei Xu,Lintao Hou

DOI: https://doi.org/10.1039/d4tc02669a

IF: 6.4

2024-08-28

Journal of Materials Chemistry C

Abstract:The back contact of p-type semiconductors and metal electrode have always been a difficulty in fabricating photovoltaic with high performance. The incompatibility of high HOMO with the metal work function may lead to Schottky contact at the back semiconductor-metal interface and lead to device inversion. As such, the performance of the photovoltaic are restricted, especially for the solution-processed CdTe NC solar cells. In our research, we proposed using Cu salts as Cu source to dope the CdTe NC and improve the back contact interface. Enhanced performance in solution-processed NC solar cells is achieved by introducing an engineered Cu salt layer (CuCl2 and CuBr2). Exceptional performance is attained with the optimized CdTe NC doped with CuCl2, exhibiting a high short-circuit current of 20.20 mA cm-2, an open-circuit voltage of 0.58 V, a fill factor of 53.74 %, and resulting in a power conversion efficiency of 6.3 %. These results represent a significant improvement over the control group. Through detailed first principles studies and experimental verification, we demonstrate that the copper halide doped CdTe NC thin film is promising to promote the carrier concentration of the CdTe NC and suppress carrier recombination by improving band alignment at the back contact interface.

materials science, multidisciplinary,physics, applied
Delocalized Impurity Phonon Induced Electron-Hole Recombination in Doped Semiconductors.

W. Saidi,Yu Xie,Z. Lan,Qijing Zheng,Jin Zhao,Lili Zhang,O. Prezhdo

DOI: https://doi.org/10.1021/acs.nanolett.7b03933

2018-02-02

Abstract:Semiconductor doping is often proposed as an effective route to improving the solar energy conversion efficiency by engineering the band gap; however, it may also introduce electron-hole (e-h) recombination centers, where the determining element for e-h recombination is still unclear. Taking doped TiO2 as a prototype system and by using time domain ab initio nonadiabatic molecular dynamics, we find that the localization of impurity-phonon modes (IPMs) is the key parameter to determine the e-h recombination time scale. Noncompensated charge doping introduces delocalized impurity-phonon modes that induce ultrafast e-h recombination within several picoseconds. However, the recombination can be largely suppressed using charge-compensated light-mass dopants due to the localization of their IPMs. For different doping systems, the e-h recombination time is shown to depend exponentially on the IPM localization. We propose that the observation that delocalized IPMs can induce fast e-h recombination is broadly applicable and can be used in the design and synthesis of functional semiconductors with optimal dopant control.

Medicine,Materials Science,Physics
Crystallization mechanism and defect passivation of Cu2ZnSn(S,Se)4 thin film solar cells via in situ potassium doping

Liangzheng Dong,Shengye Tao,Ming Zhao,Daming Zhuang,Yafei Wang,Hanpeng Wang,Mengyao Jia,Junsu Han,Hongwei Zhu

DOI: https://doi.org/10.1039/d3ta03421f

IF: 11.9

2023-09-13

Journal of Materials Chemistry A

Abstract:Alkali metal doping has achieved prominent results in Cu 2 ZnSn(S,Se) 4 (CZTSSe) thin film solar cells. In this paper, in situ K-doped CZTSSe thin film solar cells were prepared by magnetron sputtering with a K-containing CZTS target. The role and mechanism of K doping in the crystallization process of CZTSSe are investigated. It demonstrates that K doping can promote the formation of compact crystals with less pinholes on the surface of CZTSSe. The diffusion of Se from the surface towards the back contact is hindered during the selenization process, which gives CZTSSe films with smaller grains. However, electrical characterization indicated that the K-doped CZTSSe cells have better device performance and fewer defects in the depletion region and at the heterojunction interface. It is speculated that defects of absorbers are passivated by the improved electrical properties of the grain boundary and optimized heterojunction band alignments. The maximum efficiency of the K-doped CZTSSe solar cell reaches 12.6% (certified efficiency of 12.67%). This work provides a simple preparation method for alkali metal-doped CZTSSe absorbers, and proves that alkali metal doping has great potential in the development of CZTSSe solar cells.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Pyoderma gangrenosum presenting as an acute suppurative hand infection--a case report.

D. Ferlic

DOI: https://doi.org/10.1016/S0363-5023(83)80128-2

1983-09-01

Abstract:
Element doping-induced effects in Zn-doped CdTe quantum-dot system: Insights from an ultrafast dynamics perspective

Jiachen Zhang,Lei Zhang,Qun Zhang

DOI: https://doi.org/10.1063/5.0078477

IF: 4.304

2022-01-21

The Journal of Chemical Physics

Abstract:Element doping can have a profound impact on the photoelectrochemical properties of quantum dots (QDs); nevertheless, the hitherto known information in this regard is mainly from the steady-state characterizations and remains lacking input from the dynamics perspective. Herein, we present a systematic scrutiny of the element doping-induced effects in Zn-doped CdTe QDs. By means of steady-state/time-resolved/temperature-dependent photoluminescence spectroscopy and ultrafast transient absorption spectroscopy, we reveal that the slight Zn-doping in CdTe QDs can greatly affect the involved carrier relaxation dynamics through a density-of-state modification for both near-band-edge and localized surface trap states. Furthermore, such slight doping is found to be quite significant in modulating the photoreduction efficiency (of particular relation to the localized surface trap states) as well as altering the involved relaxation/reaction activation energy and phonon effect in this QDs system. This work enriches our fundamental understanding of the element doping-induced surface/interface effects, from the dynamics perspective in particular, and, hence, offers helpful guidance for QDs-based photoelectrochemical design and optimization.

chemistry, physical,physics, atomic, molecular & chemical
Li+&Ag+ and Li+&Cd2+ double-ion-doping strategy to improve the efficiency of Cu2ZnSn(S,Se)4 solar cells

Junye Tong,Shaotong Wang,Gang Wang,Yue Liu,Yuxiang Wang,Liping Chen,Lingling Wang,Daocheng Pan,Xintong Zhang,Yichun Liu

DOI: https://doi.org/10.1016/j.solener.2021.03.035

IF: 7.188

2021-05-01

Solar Energy

Abstract:Ion doping strategy is a promising method to enhance the efficiency of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells, however, most of the reported works focus on studying the single ion doping in CZTSSe absorber layers. Here, Li+&Ag+ and Li+&Cd2+ double-ion-doping strategy are applied to improve the microstructure and device performances. We found that the double-ion-doping strategy can obviously increase the grain size, reduce the thickness of fine-grain layers and enhance the device performances. Furthermore, the PCEs of Li+&Ag+ and Li+&Cd2+ doped CZTSSe solar cells are up to 8.87% and 8.39%, respectively. It shows an encouraging improvement of over 43.5% and 35.8% enhancement compared with the traditional method (6.18%), and significantly higher than single ion doping strategy (7.60%, 7.99% and 7.11% for Li+, Ag+, and Cd2+ doped CZTSSe solar cells). This work provides a new solution to improve the microstructure and device performances of CZTSSe solar cells.

energy & fuels
Se as hetero-nucleation seeds reinforcing intermetallic diffusion for improved electrodeposition-processed CZTS solar cells

Jingling Liu,Xinyu Wu,Ying Xue,Sheng Liu,Zhiying Zhu,Xinsheng Liu,Ke Cheng,Zuliang Du

DOI: https://doi.org/10.1016/j.nanoen.2024.110183

IF: 17.6

2024-09-03

Nano Energy

Abstract:Pure sulfide-based Cu 2 ZnSnS 4 (CZTS) stands as a competitive photovoltaic material, composted of earth-abundant, low-cost, and stable constituent elements. The stacked electrodeposition process has garnered attention owing to its facile regulation of elemental composition, and its non-vacuum, room-temperature, water-based solvent operating conditions. However, the limitation based on the stacked electrodeposition-processed CZTS primarily stems from the numerous defects and detrimental interfaces induced by the deficient intermetallic diffusion. Herein, a Se nanoparticle layer at the back interface is introduced to enhance the intermetallic diffusion, optimize the precursor morphology, and subsequently accelerate the grain growth. Comprehensive characterizations reveal Se, acting as the hetero-nucleation seeds, catalyzes Cu deposition and promotes a highly porous structure with a homogeneous elemental distribution. Consequently, high-quality CZTS with enhanced crystallinity and passivated defects is achieved, thereby promoting carrier transport and suppressing non-radiative recombination. These sequential positive effects result in a substantial improvement in short current density ( J sc ) and fill factor (FF), attaining an improved efficiency. Our findings offer a promising strategy to overcome the issues of the stacked electrodeposition-processed films and highly contribute to the development of high-quality CZTS-based solar cells.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Li, Ag Co‐Doping Enables Efficient Kesterite Solar Cell with a High Fill Factor of 74.30%

Xinyi Zhong,Jinlin Wang,Litao Han,JinJin Chi,Tong Liu,Dongxing Kou,Wenhui Zhou,Zhengji Zhou,Shengjie Yuan,Yuena Meng,Yafang Qi,Qingbo Meng,Sixin Wu

DOI: https://doi.org/10.1002/adfm.202418548

IF: 19

2024-12-05

Advanced Functional Materials

Abstract:The FF losses caused by non‐radiative recombination and insufficient carrier transport are quantitatively analyzed based on the Li and Ag‐doped CZTSSe devices. The Li and Ag co‐doping strategy enables a 14.91% efficient kesterite solar cell with the highest reported FF to date of 74.30% through collaborative optimization of carrier extraction and suppression of non‐radiative recombination. In addition to open‐circuit voltage (VOC) loss, fill factor (FF) loss is considered another major factor restricting the further optimization of Cu2ZnSn(S,Se)4 (CZTSSe) device efficiency. In this work, a comprehensive investigation into the loss mechanisms of FF has been conducted, and implemented a Li&Ag co‐doping approach to enhance FF. The results indicate that the FF loss caused by insufficient carrier extraction is higher than that caused by non‐radiative recombination. The carrier extraction capability is significantly influenced by the band alignment of the CdS/CZTSSe interface and has little relationship with the carrier concentration of the absorber. Therefore, although Ag doping reduces the hole concentration and conductivity, it reduces the FF loss caused by carrier extraction due to the improvement of band alignment. Ag doping is also superior to Li in passivating harmful defects, which helps reduce FF losses caused by non‐radiative recombination. Correspondingly, Li performs better than Ag in increasing the hole carrier concentration and optimizing band alignment, greatly reducing FF losses caused by insufficient carrier transport. Finally, the Li and Ag co‐doping strategy enables a 14.91% efficient kesterite solar cell with the highest reported FF to date of 74.30% through collaborative optimization of carrier extraction and suppression of non‐radiative recombination.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Weak Anharmonicity Rationalizes the Temperature-Driven Acceleration of Nonradiative Dynamics in Cu 2 ZnSnS 4 Photoabsorbers

Pingzhi Zhang,Zhufeng Hou,Li Jiang,Jack Yang,Wissam A. Saidi,Oleg V. Prezhdo,Wei Li

DOI: https://doi.org/10.1021/acsami.1c21526

2021-12-17

Abstract:We report a time-domain ab initio investigation of the nonradiative electron-hole recombination in quaternary Cu<sub>2</sub>ZnSnS<sub>4</sub> (CZTS) at different temperatures using a combination of time-dependent density functional theory and nonadiabatic molecular dynamics. Our results demonstrate that higher temperatures increase both inelastic and elastic electron-phonon interactions. Elevated temperatures moderately increase the lattice anharmonicity and cause stronger fluctuations of electronic energy levels, enhancing the electron-phonon coupling. The overall nuclear anharmonic effect is weak in CZTS, which can be ascribed to their stable bonding environment. Phonon-induced loss of electronic coherence accelerates with temperature, due to stronger elastic electron-phonon scattering. The enhanced inelastic electron-phonon scattering decreases charge carrier lifetimes at higher temperatures, deteriorating material performance in optoelectronic devices. The detailed atomistic investigation of the temperature-dependent charge carrier dynamics, with particular focus on anharmonic effects, guides the development of more efficient solar cells based on CZTS and related semiconductor photoabsorbers.

materials science, multidisciplinary,nanoscience & nanotechnology
Effect of Cations in Coadsorbate on Charge Recombination and Conduction Band Edge Movement in Dye-Sensitized Solar Cells

Xiaoming Ren,Quanyou Feng,Gang Zhou,Chun-Hui Huang,Zhong-Sheng Wang

DOI: https://doi.org/10.1021/jp911630z

2010-01-01

Abstract:This article quantitatively studied the coadsorption effect of deoxycholic acid (DCA) and sodium deoxycholate (DCNa) on the conduction band (CB) shift and charge recombination in dye-sensitized solar cells (DSSC). We found that the degree of the effect varied as the cation differed from H+ to Na+. DCA shifted the CB positively by 26 mV, but DCNa shifted the CB negatively by 33 mV. As compared with the dye-alone-based DSSC, the coadsorption of dye NKX-2677 (2-cyano-3[5'-(1,1,6,6-tetramethyl-10-oxo-2,3,5,6-tetrahydro-1H,4H,10H-11-oxa-3a-aza-benzo[de]anthracen-9-y1)[2,2']bithiophenyl-5-yl]acrylic acid) with DCA retarded the charge recombination rate by 10-fold, corresponding to a 70 mV enhancement of the open-circuit photovoltage (V-oc), and the coadsorption of NKX-2677 with DCNa slowed down the charge recombination rate by 3-fold, corresponding to a 37 mV enhancement of V-oc The suppression of charge recombination in combination with CB movement, arising from coadsorption, resulted in a V-oc gain of 44 mV (= 70-26 mV) for the DSSC with NKX-2677/DCA and 70 mV (= 37 33 mV) for the DSSC with NKX-2677/DCNa. The experimentally observed V-oc enhancements of 41 mV by DCA coadsorption and 65 mV by DCNa coadsorption were in good agreement with the calculated improvements.

[The clinical picture in bronchial tuberculosis].

Passivation of Grain Boundaries and Defects in CZTSSe Solar Cells by In Situ Na Doping

Doping Behavior of Zn in CdS and Its Effect on the Power Conversion Efficiency of the Cu2ZnSn(S, Se)4 Solar Cell

Unlocking the Effects of Cu Doping in Heavy-Metal-free AgIn5S8 Quantum Dots for Highly Efficient Photoelectrochemical Solar Energy Conversion

Synergetic Effects of Zn Alloying and Defect Engineering on Improving the CdS Buffer Layer of Cu2ZnSnS4 Solar Cells

Synergistic Recombination Suppression by an Inorganic Layer and Organic Dye Molecules in Highly Photostable Quantum Dot Sensitized Solar Cells.

Effect of Na doping on the performance and the band alignment of CZTS/CdS thin film solar cell

Strategy for Performance Enhancement of Cd1-XZnXTe/CdS Core/shell Quantum Dot Sensitized Solar Cells Through Band Adjustment

The Design of Mn2+&Co2+ Co-Doped CdTe Quantum Dot Sensitized Solar Cells with Much Higher Efficiency.

Isolated renal haemangioma in children: presentation and management

Controlling charge separation and recombination rates in CdSe/ZnS type I core-shell quantum dots by shell thicknesses.

Promoting solution-processed CdTe nanocrystal solar cells by rationally controlled copper doping

Delocalized Impurity Phonon Induced Electron-Hole Recombination in Doped Semiconductors.

Crystallization mechanism and defect passivation of Cu2ZnSn(S,Se)4 thin film solar cells via in situ potassium doping

Pyoderma gangrenosum presenting as an acute suppurative hand infection--a case report.

Element doping-induced effects in Zn-doped CdTe quantum-dot system: Insights from an ultrafast dynamics perspective

Li+&Ag+ and Li+&Cd2+ double-ion-doping strategy to improve the efficiency of Cu2ZnSn(S,Se)4 solar cells

Se as hetero-nucleation seeds reinforcing intermetallic diffusion for improved electrodeposition-processed CZTS solar cells

Li, Ag Co‐Doping Enables Efficient Kesterite Solar Cell with a High Fill Factor of 74.30%

Weak Anharmonicity Rationalizes the Temperature-Driven Acceleration of Nonradiative Dynamics in Cu 2 ZnSnS 4 Photoabsorbers

Effect of Cations in Coadsorbate on Charge Recombination and Conduction Band Edge Movement in Dye-Sensitized Solar Cells