Silicon carbide ceramics prepared by pulse electric current sintering of β–SiC and α–SiC powders with oxide and nonoxide additives

You Zhou,Kiyoshi Hirao,Motohiro Toriyama,Hidehiko Tanaka

DOI: https://doi.org/10.1557/jmr.1999.0455

IF: 2.7

1999-08-01

Journal of Materials Research

Abstract:Using a pulse electric current sintering (PECS) method, β–SiC and α–SiC powders doped with a few weight percent of Al 2 O 3 –Y 2 O 3 oxide or Al 4 C 3 –B 4 C–C nonoxide additives were rapidly densified to high densities (95.2–99.7%) within less than 30 min of total processing time. When Al 2 O 3 –Y 2 O 3 additive was used, both ceramics resulting from β–SiC and α–SiC had fine, equiaxed microstructures. In contrast, when Al 4 C 3 –B 4 C–C additive was used, the ceramic resulting from α–SiC had a coarse, equiaxed microstructure, whereas the ceramic resulting from β–SiC was composed of large elongated grains whose formation was accompanied by the β →?α phase transformation of SiC. Compared with the Al 2 O 3 –Y 2 O 3 -doped SiC ceramics, the Al 4 C 3 –B 4 C–C-doped SiC ceramics had higher densities, lower fracture toughness, and higher hardness. The fracture mode of the oxide-doped SiC was mainly intergranular, whereas the nonoxide-doped SiC exhibited almost complete intragranular fracture that was attributed to the higher interfacial bonding strength.

materials science, multidisciplinary