Structural analysis of short-chain lecithin/triglyceride micellar particles.

R. Burns,J. Donovan,M. Roberts

DOI: https://doi.org/10.1021/BI00273A040

IF: 3.321

1983-02-15

Biochemistry

Abstract:

What problem does this paper attempt to address?

Contrastive band gap engineering of strained graphyne nanoribbons with armchair and zigzag edges

xin cong,yiming liao,qiji peng,yidan yang,chuan cheng,wenqiang zhang,peilin fang,chi chen,ling miao,jianjun jiang

DOI: https://doi.org/10.1039/c5ra10372j

IF: 4.036

2015-01-01

RSC Advances

Abstract:The band gap engineering of nanostructures is the key point in the application of nanoelectronic devices. By using first-principles calculations, the band structures of graphyne nanoribbons with armchair (a-GNRs) and zigzag (z-GNRs) edges under various strains are investigated. A controllable band gap of a strained narrow a-GNR (1.36-2.85 eV) could be modulated almost linearly under an increasing strain in the range of -5% to 16%. In contrast, the band gap of a strained narrow z-GNR (2.68-2.91 eV) is relatively insensitive to -16% to 16% strain. This contrastive band gap engineering of narrow GNRs is attributed to different structure deformation of the specific graphyne structure including two kinds of carbon atoms different from those of graphene. For wider strained GNRs, the band gap (depending on its width and edge morphology) generally decreases as tensile strain increases, similar to 2D graphyne sheet. The charge density distributions of key states around Fermi level are presented to investigate the reason for band gap variation.
Unusual Scaling Laws of the Band Gap and Optical Absorption of Phosphorene Nanoribbons

Vy Tran,Li Yang

DOI: https://doi.org/10.1103/PhysRevB.89.245407

2014-04-09

Abstract:We report the electronic structure and optical absorption spectra of monolayer black phosphorus (phosphorene) nanoribbons (PNRs) via first-principles simulations. The band gap of PNRs is strongly enhanced by quantum confinement. However, differently orientated PNRs exhibit distinct scaling laws for the band gap vs the ribbon width (w). The band gaps of armchair PNRs scale as 1/(w^2), while zigzag PNRs exhibit a 1/w behavior. These distinct scaling laws reflect a significant implication of the band dispersion of phosphorene: electrons and holes behave as classical particles along the zigzag direction, but resemble relativistic particles along the armchair direction. This unexpected merging of classical and relativistic properties in a single material may produce novel electrical and magnetotransport properties of few-layer black phosphorus and its ribbon structures. Finally, the respective PNRs host electrons and holes with markedly different effective masses and optical responses, which are suitable for a wide range of applications.

Mesoscale and Nanoscale Physics,Materials Science,Computational Physics
In-Plane Uniaxial Strain in Black Phosphorus Enables the Identification of Crystalline Orientation.

Shuqing Zhang,Nannan Mao,Juanxia Wu,Lianming Tong,Jin Zhang,Zhirong Liu

DOI: https://doi.org/10.1002/smll.201700466

IF: 13.3

2017-01-01

Small

Abstract:Identification of the crystalline axis of anisotropic black phosphorus (BP) is important for investigating its physical properties, as well as for optical and electronic applications. Herein, it is showed that by applying in-plane uniaxial strain and measuring the changes of the Raman shifts, the crystalline axis of BP can be reliably determined. The strain effects on the Raman shifts are angle-dependent, and they can be expressed as a combination of the Raman responses under zigzag and armchair strain. Differing from previous polarized optical spectroscopic methods where the Raman intensity is analyzed, the proposed method uses the Raman frequency shift, which is less affected by laser polarization, excitation wavelength, the sample thickness, and the substrate. The effective strain applied on BP from the stretched substrate is estimated, and the results show that only 20 to 40% of the strain can be effectively transferred to BP flakes from a polyethylene terephthalate substrate. Our method provides not only an effective and robust approach to identify the crystalline orientation of layered BP, but it is also a model to extract additional information in strain-related studies. It can also be extended to other 2D anisotropic materials.
The Phosphorene Under The External Electronic Field And Strain

Tao Wang,Yan Liu,Wen Wen,Wei Guo,You Yin

DOI: https://doi.org/10.1142/S0129183117501315

2017-01-01

International Journal of Modern Physics C

Abstract:Using the ab initio plane-wave ultrasoft pseudopotential method based on the generalized gradient approximation (GGA), we investigate the bandgap tuning in monolayer phosphorene in terms of applying external electric fields perpendicular to the layers. The bandgap continuously decreases with the applied electric fields, eventually rendering them metallic. The phenomenon is explained by the giant stark effect. The interlayer P-P distance also result in the semiconductor-to-metal transition. The phosphorene exhibits the significant bandgap tuning ability under different strains with 5% variation. Our investigations show the bandgap change for the fabrication of novel electronic and photonic devices.
Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Bo Zheng,Naichao Si,Guoxin Xie,Quan Wang

DOI: https://doi.org/10.1016/j.physleta.2016.12.046

IF: 2.707

2017-01-01

Physics Letters A

Abstract:Black phosphorus has recently appeared as a promising two-dimensional material for applications in high performance nanoelectronics. Its single- and few-atomic layer forms in field-effect transistors have attracted a lot of attention due to the tunable bandgap (0.3-2.0 eV), high carrier mobility (1000 cm(2) V-1 s(-1)) and decent on-off ratios (10(5)). Here, we demonstrate a suspended black phosphorus field effect transistor (BP-FET) and utilize Raman spectroscope to characterize the strain on the effects of Raman phonon. We find that red shifts appear in all the three vibrational modes (A(g)(i), B-2g and A(g)(2) in different degrees. Among them, 14 mode is most sensitive to the tensile strain. We further investigate the electronic properties with a Cascade semi-automatic probe station. The linear relationships in the output curves indicate the contacts between black phosphorus and electrodes are ohmic contacts. The transfer characteristic curves declare the drain current modulation is similar to 7.6 x 10(3) for the hole conduction and similar to 57 for the electron conduction. Mobility of this device is found to be 347.5 cm(2) V-1 s(-1) and 4.9 cm(2) V-1 s(-1) for the hole and electron conduction, respectively. These results provide a theoretical basis for the coordination of high-performance black phosphorus electronic components. (C) 2016 Elsevier B.V. All rights reserved.
Strain-Induced Gap Transition and Anisotropic Dirac-Like Cones in Monolayer and Bilayer Phosphorene

Can Wang,Qinglin Xia,Yaozhuang Nie,Guanghua Guo

DOI: https://doi.org/10.1063/1.4916254

IF: 2.877

2015-01-01

Journal of Applied Physics

Abstract:The electronic properties of two-dimensional monolayer and bilayer phosphorene subjected to uniaxial and biaxial strains have been investigated using first-principles calculations based on density functional theory. Strain engineering has obvious influence on the electronic properties of monolayer and bilayer phosphorene. By comparison, we find that biaxial strain is more effective in tuning the band gap than uniaxial strain. Interestingly, we observe the emergence of Dirac-like cones by the application of zigzag tensile strain in the monolayer and bilayer systems. For bilayer phosphorene, we induce the anisotropic Dirac-like dispersion by the application of appropriate armchair or biaxial compressive strain. Our results present very interesting possibilities for engineering the electronic properties of phosphorene and pave a way for tuning the band gap of future electronic and optoelectronic devices.
Electronic and Transport Property of Phosphorene Nanoribbon

Qingyun Wu,Lei Shen,Ming Yang,Zhigao Huang,Yuan Ping Feng

DOI: https://doi.org/10.48550/arXiv.1405.3077

2015-07-28

Abstract:By combining density functional theory and nonequilibrium Green's function, we study the electronic and transport properties of monolayer black phosphorus nanoribbons (PNRs). First, we investigate the band-gap of PNRs and its modulation by the ribbon width and an external transverse electric feld. Our calculations indicate a giant Stark effect in PNRs, which can switch on transport channels of semiconducting PNRs under low bias, inducing an insulator-metal-transition. Next, we study the transport channels in PNRs via the calculations of the current density and local electron transmission pathway. In contrast to graphene and MoS_2 nanoribbons, the carrier transport channels under low bias are mainly located in the interior of both armchair and zigzag PNRs, and immune to a small amount of edge defects. Lastly, a device of the PNR-based dual-gate feld-effect-transistor, with high on/off-ratio of 10^3, is proposed based on the giant electric feld tuning effect.

Mesoscale and Nanoscale Physics
Tension-Induced Phase Transformation and Anomalous Poisson Effect in Violet Phosphorene

Penghua Ying,Xiaowen Li,Xiaobin Qiang,Yao Du,Jin Zhang,Lang Chen,Zheng Zhong

DOI: https://doi.org/10.1016/j.mtphys.2022.100755

IF: 11.021

2022-01-01

Materials Today Physics

Abstract:Two-dimensional violet phosphorene (VP) nanosheets are promising semiconductor materials with unique cross structures distinct from those of their allotropes such as black phosphorene and blue phosphorene, but their mechanical behaviors remain almost unexplored. By using the first-principles calculations, in this paper we investigate the mechanical behaviors of monolayer, bilayer, and bulk VP under uniaxial tension. A phase transformation from the open-pore phase to closed-pore phase is observed in VP structures when under a specific tensile strain. It is revealed that the phase transformation is attributed to the competition between the rotation and elongation of sub-nano rods in VP structures during the loading process. Due to the phase transformation, the in-plane Poissons ratio of monolayer VP can become greater than 1.2, while the bulk VP possesses a negative out-of-plane Poissons ratio with a magnitude up to -0.3 at a certain strain. These results indicate that Poisson effects in VP are superior to those in any other existing two-dimensional materials. In addition, based on the tensor analysis of elastic constants, a strong mechanical anisotropy is observed in VP structures both before and after the phase transformation. Besides the mechanical properties, the band gap of all VP structures decreases as the applied tensile strain increases, which can eventually transform into the metallic state prior to their fracture. The combination of unique phase transformation, anomalous Poisson effect, strong mechanical anisotropy and tunable electronic properties render VP be a novel nanoscale metamaterial with multifunctional applications.
Edge effects on the electronic properties of phosphorene nanoribbons

Xihong Peng,Andrew Copple,Qun Wei

DOI: https://doi.org/10.1063/1.4897461

IF: 2.877

2014-10-14

Journal of Applied Physics

Abstract:Two dimensional few-layer black phosphorus crystal structures have recently been fabricated and have demonstrated great potential in electronic applications. In this work, we employed first principles density functional theory calculations to study the edge and quantum confinement effects on the electronic properties of the phosphorene nanoribbons (PNR). Different edge functionalization groups, such as H, F, Cl, OH, O, S, and Se, in addition to a pristine case were studied for a series of ribbon widths up to 3.5 nm. It was found that the armchair-PNRs (APNRs) are semiconductors for all edge groups considered in this work. However, the zigzag-PNRs (ZPNRs) show either semiconductor or metallic behavior in dependence on their edge chemical species. Family 1 edges (i.e., H, F, Cl, OH) form saturated bonds with P atoms in the APNRs and ZPNRs, and the edge states keep far away from the band gap. However, Family 2 edges (pristine, O, S, Se) form weak unsaturated bonds with the pz orbital of the phosphorus atoms and bring edge states within the band gap of the ribbons. For the ZPNRs, the edge states of Family 2 are present around the Fermi level within the band gap, which close up the band gap of the ZPNRs. For the APNRs, these edge states are located at the bottom of the conduction band and result in a reduced band gap.

physics, applied
Phosphorene Nanoribbons, Phosphorus Nanotubes, and van der Waals Multilayers

Hongyan Guo,Ning Lu,Jun Dai,Xiaojun Wu,Xiao Cheng Zeng

DOI: https://doi.org/10.1021/jp505257g

2014-06-17

The Journal of Physical Chemistry C

Abstract:We perform a comprehensive first-principles study of the electronic properties of phosphorene nanoribbons, phosphorus nanotubes, multilayer phosphorene sheets, and heterobilayers of phosphorene and two-dimensional (2D) transition-metal dichalcogenide (TMDC) monolayer. The tensile strain and electric-field effects on electronic properties of low-dimensional phosphorene nanostructures are also investigated. Our calculations show that the bare zigzag phosphorene nanoribbons (z-PNRs) are metals regardless of the ribbon width, whereas the bare armchair phosphorene nanoribbons (a-PNRs) are semiconductors with indirect bandgaps and the bandgaps decrease with increasing ribbon width. We find that compressive (or tensile) strains can reduce (or enlarge) the bandgap of the bare a-PNRs while an in-plane electric field can significantly reduce the bandgap of the bare a-PNRs, leading to the semiconductor-to-metal transition beyond certain electric field. For edge-passivated PNR by hydrogen, z-PNRs become semiconductor with nearly direct bandgaps and a-PNRs are still semiconductor but with direct bandgaps. The response to tensile strain and electric field for the edge-passivated PNRs is similar to that for the edge-unpassivated (bare) a-PNRs. For single-walled phosphorus nanotubes, both armchair and zigzag nanotubes are semiconductors with direct bandgaps. With either tensile strains or transverse electric field, behavior of bandgap modulation similar to that for a-PNRs can arise. It is known that multilayer phosphorene sheets are semiconductors whose bandgaps decrease with an increase in the number of multilayers. In the presence of a vertical electric field, the bandgaps of multilayer phosphorene sheets decrease with increasing electric field and the bandgap modulation is more significant with more layers. Lastly, heterobilayers of phosphorene (p-type) with an n-type TMDC (MoS2 or WS2) monolayer are still semiconductors while their bandgaps can be reduced by applying a vertical electric field as well. We also show that the combined phosphorene/MoS2 heterolayers can be an effective solar cell material. Our estimated power conversion efficiency for the phosphorene/MoS2 heterobilayer has a theoretical maximum value of 17.5%.

chemistry, physical,nanoscience & nanotechnology,materials science, multidisciplinary
Influence of Edge Functionalization on Electronic and Optical Properties of Armchair Phosphorene Nanoribbons: a First-Principles Study

Pritam Bhattacharyya,Rupesh Chaudhari,Naresh Alaal,Tushar Rana,Alok Shukla

DOI: https://doi.org/10.1088/2516-1075/ab7e78

2020-06-27

Abstract:In this work, we present a systematic first-principles density-functional theory based study of geometry, electronic structure, and optical properties of armchair phosphorene nanoribbons (APNRs), with the aim of understanding the influence of edge passivation. Ribbons of width ranging from 0.33 nm to 3.8 nm were considered, with their edges functionalized with the groups H, OH, F, Cl, S, and Se. The geometries of various APNRs were optimized, and the stability was checked by calculating their formation energies. Using the relaxed geometries, calculations of their band structure and optical properties were performed. Pristine APNRs, as expected, exhibit significant edge reconstruction, rendering them indirect band gap semiconductors, except for one width {\normalsize{}($N=5$, where $N$ is the width parameter)} for which a direct band gap is observed. The edge passivated APNRs are found to be direct band gap semiconductors, with the band gap at the $\Gamma$-point, for all the functional groups considered in this work. To obtain accurate estimates of band gaps, calculations were also performed using HSE06 hybrid functional for several APNRs. Our calculations reveal that functional groups have significant influence on the band gaps and optical properties of narrower APNRs. For wider passivated ribbons, with the increasing ribbon widths, the gaps converge to almost the same value, irrespective of the group. We also performed calculations including the spin-orbit coupling (SOC) for hydrogen passivated APNRs with $N=5$ and 11. We found that SOC has no significant influence on the band structure of the studied APNRs. However, for the broader APNR, a lowering of peak intensities was observed in the optical absorption spectrum beyond 5 eV.

Mesoscale and Nanoscale Physics,Materials Science
Anisotropic Tunability of Vibrational Modes in Black Phosphorus Under Uniaxial Compressive/Tensile Strain

Hao Li,Tayfun Kutlu,Félix Carrascoso,Hasan Sahin,Carmen Munuera,Andrés Castellanos Gómez

DOI: https://doi.org/10.1002/admi.202300540

IF: 5.4

2023-09-30

Advanced Materials Interfaces

Abstract:A four‐point bending apparatus is constructed to study the effect of uniaxial strain on the vibrational property of anisotropic black phosphorus. Particularly, strong anisotropy on the Raman blueshift/redshift rate upon compressive/tensile strain can be observed, which results from the strain‐induced regulation of the bond angle, bond length, and interlayer interactions according to density functional theory calculation analysis. Strain engineering is a powerful strategy for tuning the optical, electrical, vibrational properties of 2D nanomaterials. In this work, a four‐point bending apparatus is constructed to apply both compressive and tensile strain on 2D anisotropic black phosphorus flake. Further polarized Raman spectroscopy is used to study the vibrational modes of black phosphorus flakes under uniaxial strain applied along various crystalline orientations. Here, a strong anisotropic blue/redshift of A1g, B2g, and A2g modes is found under compressive/tensile strain, respectively. Interestingly, mode A1g exhibits the maximum/minimum shift while mode B2g and mode A2g present the minimum/maximum shift when the strain is applied along armchair/zigzag direction. Density functional theory calculations are carried out to investigate the anisotropic strain response mechanism, finding that the strain‐induced regulation of the P─P bond angle, bond length, and especially interlayer interaction has a giant influence on the Raman shift.

materials science, multidisciplinary,chemistry
Graphene Nanoribbons under Mechanical Strain.

Changxin Chen,Justin Zachary Wu,Kai Tak Lam,Guosong Hong,Ming Gong,Bo Zhang,Yang Lu,Alexander L Antaris,Shuo Diao,Jing Guo,Hongjie Dai

DOI: https://doi.org/10.1002/adma.201403750

2014-01-01

Abstract:Uniaxial strains are introduced into individual graphene nanoribbons (GNRs) with highly smooth edges to investigate the strain effects on Raman spectroscopic and electrical properties of GNRs. It is found that uniaxial strain downshifts the Raman G-band frequency of GNRs linearly and tunes their bandgap significantly in a non-monotonic manner. The strain engineering of GNRs is promising for potential electronics and photonics applications.
The electronic and optical properties of graphene nanoribbons under the influence of the periodic strain

Chunwen Zhang,W.X. Yan

2024-11-02

Abstract:The electronic and optical properties of graphene nanoribbons under uniaxial periodic strain have been explored using various nearest-neighbor hopping patterns. It is found that by properly selecting hopping patterns, momentum-resolved gaps within minibands emerge, modifying the energy band structure to exhibit hollowed-out profiles, and enhancing peak intensity in local density of states but reducing peak count. The optical transitions are impacted by altered parity symmetry of wavefunctions, causing changes in optical selection rules. The parity of wavefunctions for strained GNRs has been established through rigorous mathematical proof, whereby the optical selection rule is determined for the strained GNRs. The absorption curves arise from a complex interplay between diminished velocity matrix elements and escalated joint density of states.

Mesoscale and Nanoscale Physics
Electronic structures, transport properties, and optical absorption of bilayer blue phosphorene nanoribbons

L J Gong,H L Shi,J Yang,Q Z Han,Y H Ren,S Y He,Y H Zhao,Z T Jiang,Lijuan Gong,Hanli Shi,Jie Yang,Qingzhen Han,Yuehong Ren,Shuyi He,Yuehong Zhao,Zhaotan Jiang

DOI: https://doi.org/10.1039/d3cp02848h

IF: 3.3

2023-08-05

Physical Chemistry Chemical Physics

Abstract:Based on first-principles density-functional theory and nonequilibrium Green's function, we study the electronic band structure, the electronic transport, and the optical absorption of the bilayer blue phosphorene nanoribbons (BPNRs). Both the bilayer armchair BPNRs (a-BPNRs) and zigzag BPNRs (z-BPNRs) behave as semiconductors in the narrow nanoribbon case and metals in the wide nanoribbon case, sharply different from their monolayer counterparts where the monolayer a-BPNRs (z-BPNRs) are always semiconducting (metallic). This indicates the interlayer couplings or the layer number increasing may induce the switching of the conductivity of the monolayer BPNRs, which is absent in graphene and phosphorene nanoribbons. Furthermore, we explore the edge states of the energy bands near Fermi energy, and find there are almost no pure edge-state band branches in the bilayer BPNRs, which can be attributed to the interlayer couplings between the edge-states in one layer and the bulk-states in the other. Consequently, the resulting complex band structures cannot be directly analyzed any more in the framework of the two-body coupling picture just according to the simple band structures of the monolayer BPNRs. Finally, we present the current-voltage characteristics and the optical absorption of the bilayer a-BPNRs and z-BPNRs. The influences of the nanoribbon width and the interlayer couplings on the current and the anisotropic optical absorption can be understood based on the complex energy band structures. This research should be an important reference of extending the field of BPNRs from monolayer to bilayer case, and deepen the understanding of the difference between the monolayer and bilayer nanoribbons in different materials.

chemistry, physical,physics, atomic, molecular & chemical
Electronic Properties of Armchair Black Phosphorene Nanoribbons Edge-Modified by Transition Elements V, Cr, and Mn

Jiong-Hua Huang,Xue-Feng Wang,Yu-Shen Liu,Li-Ping Zhou

DOI: https://doi.org/10.1186/s11671-019-2971-5

2019-04-27

Nanoscale Research Letters

Abstract:The structural, electrical, and magnetic properties of armchair black phosphorene nanoribbons (APNRs) edge-functionalized by transitional metal (TM) elements V, Cr, and Mn were studied by the density functional theory combined with the non-equilibrium Green's function. Spin-polarized edge states introduce great varieties to the electronic structures of TM-APNRs. For APNRs with Mn-stitched edge, their band structures exhibit half-semiconductor electrical properties in the ferromagnetic state. A transverse electric field can then make the Mn-APNRs metallic by shifting the conduction bands of edge states via the Stark effect. The Mn/Cr-APNR heterojunction may be used to fabricate spin p-n diode where strong rectification acts only on one spin.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Lattice Vibrational Modes and Raman Scattering Spectra of Strained Phosphorene

Ruixiang Fei,Li Yang

DOI: https://doi.org/10.1063/1.4894273

IF: 4

2014-01-01

Applied Physics Letters

Abstract:Strain is prominent in fabricated samples of two-dimensional semiconductors and it also serves as an exploitable tool for engineering their properties. However, quantifying strain and characterizing its spatially inhomogeneous distribution across a material are challenging tasks. Here, we report the lattice vibrational modes and corresponding Raman spectra of strained monolayer black phosphorus (phosphorene) by first-principles simulations. We show that frequencies of vibrational modes of phosphorene and their Raman scattering peaks exhibit substantial and distinct shifts according to the types and size of strain. Therefore, combined with high spatial-resolution Raman scattering measurements, our calculated results can quantify strain distributions in phosphorene. This information is essential for understanding structures of future large-scale fabrication and strain engineering of phosphorene.
Remarkable Anisotropic Phonon Response in Uniaxially Strained Few-Layer Black Phosphorus

Yanlong Wang,Chunxiao Cong,Ruixiang Fei,Weihuang Yang,Yu Chen,Bingchen Cao,Li Yang,Ting Yu

DOI: https://doi.org/10.1007/s12274-015-0895-7

IF: 9.9

2015-01-01

Nano Research

Abstract:Black phosphorus (BP) is a good candidate for studying strain effects on twodimensional (2D) materials beyond graphene and transition-metal dichalcogenides. This is because of its particular ability to sustain high strain and remarkably anisotropic mechanical properties resulting from its unique puckered structure. We here investigate the dependence of lattice vibrational frequencies on crystallographic orientations in uniaxially strained few-layer BP by in-situ strained Raman spectroscopy. The out-of-plane A(1) (g) mode is sensitive to uniaxial strain along the near-armchair direction whereas the in-plane B-2g and A(2) (g) modes are sensitive to strain in the near-zigzag direction. For uniaxial strains applied away from these directions, all three phonon modes are linearly redshifted. Our experimental observation is explained by the anisotropic influence of uniaxial tensile strain on structural properties of BP using density functional theory. This study demonstrates the possibility of selective tuning of in-plane and out-of-plane phonon modes in BP by uniaxial strain and makes strain engineering a promising avenue for extensively modulating the optical and mechanical properties of 2D materials.
A Computational Study of the Electronic Properties of One-Dimensional Armchair Phosphorene Nanotubes

Sheng Yu,Hao Zhu,Kwesi Eshun,Abbas Arab,Ahmad Badwan,Qiliang Li

DOI: https://doi.org/10.1063/1.4934852

IF: 2.877

2015-01-01

Journal of Applied Physics

Abstract:We have performed a comprehensive first-principle computational study of the electronic properties of one-dimensional phosphorene nanotubes (PNTs), and the strain effect on the mechanical and electrical properties of PNTs, including the elastic modulus, energy bandstructure, and carrier effective mass. The study has demonstrated that the armchair PNTs have semiconducting properties along the axial direction and the carrier mobility can be significantly improved by compressive strain. The hole mobility increases from 40.7 cm2/V s to 197.0 cm2/V s as the compressive strain increases to −5% at room temperature. The investigations of size effect on armchair PNTs indicated that the conductance increases significantly as the increasing diameter. Overall, this study indicated that the PNTs have very attractive electronic properties for future application in nanomaterials and devices.
Unusual Plasmonic Responses in Phosphorene with Topological Transition: the Interplay of Strain and Doping

Y. Zhou,M. N. Chen,M. D. Zhao,F. Tang,C. Q. Shao,M. Y. Dai

DOI: https://doi.org/10.1088/1367-2630/ac3554

2021-01-01

New Journal of Physics

Abstract:In this paper, plasmonic responses of phosphorene in the presence of strain and doping have been systematically investigated. Based on density functional theory, permittivities include both the intraband and interband transitions of electrons have been calculated. Due to the modification of the band structure, significantly higher Drude plasma frequency has been observed along the zigzag direction, other than the armchair direction as in the usual case. The resulting unusual plasmonic responses change their anisotropy, both in the elliptic as well as the hyperbolic regimes. Based on our calculations, positive strain as large as 5% along the zigzag direction can even lead to so-called reversed hyperbolic plasmonic responses. The k-surfaces of the plasmonic modes in extended monolayer have been analytically solved, and it is found that actively switching the topology (between elliptic and hyperbolic regimes) of the plasmonic responses by changing the Fermi level is possible in phosphorene at certain frequencies. In the end, a simple model has been proposed to describe such plasmonic responses in the infrared and the parameters of the model have been listed in tables which can be used directly in calculating the permittivities. Our studies may extend the scope of existing investigations of phosphorene plasmons and lead to band engineering as a way to control plasmons in two-dimensional materials.

Structural analysis of short-chain lecithin/triglyceride micellar particles.

Contrastive band gap engineering of strained graphyne nanoribbons with armchair and zigzag edges

Unusual Scaling Laws of the Band Gap and Optical Absorption of Phosphorene Nanoribbons

In-Plane Uniaxial Strain in Black Phosphorus Enables the Identification of Crystalline Orientation.

The Phosphorene Under The External Electronic Field And Strain

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Strain-Induced Gap Transition and Anisotropic Dirac-Like Cones in Monolayer and Bilayer Phosphorene

Electronic and Transport Property of Phosphorene Nanoribbon

Tension-Induced Phase Transformation and Anomalous Poisson Effect in Violet Phosphorene

Edge effects on the electronic properties of phosphorene nanoribbons

Phosphorene Nanoribbons, Phosphorus Nanotubes, and van der Waals Multilayers

Influence of Edge Functionalization on Electronic and Optical Properties of Armchair Phosphorene Nanoribbons: a First-Principles Study

Anisotropic Tunability of Vibrational Modes in Black Phosphorus Under Uniaxial Compressive/Tensile Strain

Graphene Nanoribbons under Mechanical Strain.

The electronic and optical properties of graphene nanoribbons under the influence of the periodic strain

Electronic structures, transport properties, and optical absorption of bilayer blue phosphorene nanoribbons

Electronic Properties of Armchair Black Phosphorene Nanoribbons Edge-Modified by Transition Elements V, Cr, and Mn

Lattice Vibrational Modes and Raman Scattering Spectra of Strained Phosphorene

Remarkable Anisotropic Phonon Response in Uniaxially Strained Few-Layer Black Phosphorus

A Computational Study of the Electronic Properties of One-Dimensional Armchair Phosphorene Nanotubes

Unusual Plasmonic Responses in Phosphorene with Topological Transition: the Interplay of Strain and Doping