Abstract:We propose an aperiodic loading technique to enhance the RF output power of a silicon distributed traveling-wave photodetector (TWPD), which can be used to handle high optical powers in analog optical links. This technique contains a traveling wave electrode whose input terminal is open circuit so as to avoid shunting any photocurrent from the photodetector (PD) array. As a result, the RF output to the load impedance that locates at the other terminal is enhanced. To mitigate the bandwidth reduction caused by the strong RF reflection at the open input terminal, the spacing between adjacent PD units gradually increases from the input to the load terminals. By breaking the balanced distribution of the photocurrent from each PD among the forward and the backward propagation directions, this arrangement weakens the strength of the interference between the forward and the reflected backward RF waves, and hence improves the bandwidth. In order to validate this operation principle, an analytical model is developed to calculate the frequency response of the silicon distributed TWPD. The model then is used to optimize both periodically and aperiodically distributed TWPDs on silicon. After the optimization, the 3-dB bandwidth of a four-stage aperiodic TWPD is 25.7 GHz, which is only 0.8 GHz lower than that of a four-stage periodic TWPD. However, since the aperiodic TWPD eliminates the matching impedance at its input terminal, its RF output power on the load is four times as strong as that of the periodic TWPD from 1 to 24.7 GHz.

High-Power and High-Speed Ge/Si Traveling-Wave Photodetector Optimized by Genetic Algorithm

High-Power and High-Speed Traveling-Wave Photodetectors with Genetic Algorithm Optimization

Silicon-based High-Power Traveling Wave Photodetector with Inductive Gain Peaking.

High-power traveling-wave photodetector based on an aperiodically loaded open-circuit electrode.

Bandwidth Enhancement of Traveling Wave Photodetector with Inductive Gain Peaking

A Silicon Aperiodically Distributed Traveling-Wave Photodetector with Enhanced RF Output Power

Hybrid Integrated Velocity Matched Travelling-Wave InP/InGaAs Photodetectors with Silicon Nitride Waveguides

High-Power Ge/Si Waveguide Photodetector

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High-Speed Compact Plasmonic-PdSe<sub>2</sub> Waveguide-Integrated Photodetector

High Speed (<tex>$\boldsymbol{f}_{3-\boldsymbol{d}\boldsymbol{B}}$</tex> above 10 GHz) Photo Detection at Two-micron-wavelength Realized by GeSn/Ge Multiple-quantum-well Photodiode on a 300 mm Si Substrate

High-Efficiency Photo Detection at 2 Μm Realized by GeSn/Ge Multiple-Quantum-Well Photodetectors with Photon-Trapping Microstructure

High Speed (F(3-Db) Above 10 Ghz) Photo Detection At Two-Micron-Wavelength Realized By Gesn/Ge Multiple-Quantum-Well Photodiode On A 300 Mm Si Substrate

High-efficiency GeSn/Ge Multiple-Quantum-well Photodetectors with Photon-Trapping Microstructures Operating at 2 Μm.

Waveguide-integrated PdSe2 photodetector with high responsivity and speed in the near-infrared range across the O+E+S+C bands

Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

High-uniformity and high-performance waveguide Ge photodetectors for the O and C bands

High-Speed Photodetector With Simultaneous Electrical Power Generation

Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

High-speed photo detection at two-micron-wavelength: technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate.

A Silicon-Based Integrated Photonic-Assisted Emitter for High Date-Rate Microwave Wireless Communication