Abstract:With the rapid development of 5 G communications, artificial intelligence, the Internet of Things and other fields, the increasing demand for data transmission in communication networks has resulted in optical interconnection gradually replacing traditional electrical interconnection in communication. As one of the core devices, the research and development of silicon-based photodetectors has garnered significant attention. Particularly, the advancement of germanium photodetectors (Ge PDs) holds crucial research significance for both academia and industry. Recently, a variety of high-performance photodetectors based on various photoelectric structures, emerging technologies and physical effects have been demonstrated on silicon photonic platforms. In this review, the research progress of Ge PDs is summarized, and the key technologies and processes in the latest development are analyzed. Firstly, the basic principles and performance of photodetectors are briefly introduced. Secondly, the key technology and basic structure of silicon and Ge PD are discussed. The development history of Ge PDs is then reviewed, and new mechanism design and performance improvement technologies are discussed. Finally, the current research frontiers and hotspots of high-performance Ge PDs are summarized, and the future development trends are discussed. It is hoped that this review will be helpful for readers to gain more insights into the latest advancements in high-performance photodetectors in silicon photonics and contribute to further development.

High-uniformity and high-performance waveguide Ge photodetectors for the O and C bands

High-Speed Compact Plasmonic-PdSe<sub>2</sub> Waveguide-Integrated Photodetector

Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

PIC-integrable high-responsivity germanium waveguide photodetector in the C + L band.

PIC-integrable high-responsivity germanium waveguide photodetector in the C plus L band

Waveguide-integrated PdSe2 photodetector with high responsivity and speed in the near-infrared range across the O+E+S+C bands

High-performance Ge-on-insulator lateral p-i-n waveguide photodetectors for electronic–photonic integrated circuits at telecommunication wavelengths

Hybrid Integrated Velocity Matched Travelling-Wave InP/InGaAs Photodetectors with Silicon Nitride Waveguides

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Waveguide-Integrated PdSe2 Photodetector over a Broad Infrared Wavelength Range

High-Power Ge/Si Waveguide Photodetector

Grating and Hole-Array Enhanced Germanium Lateral P-I-n Photodetectors on an Insulator Platform

High-efficiency GeSn/Ge Multiple-Quantum-well Photodetectors with Photon-Trapping Microstructures Operating at 2 Μm.

Silicon Waveguide Integrated with Germanium Photodetector for a Photonic-Integrated FBG Interrogator

High-performance Ge Photodetectors on Silicon Photonics Platform for Optical Interconnect

High-performance Flexible Waveguide-Integrated Photodetectors

High Performance p-i-n Photodetectors on Ge-on-Insulator Platform

High-Efficiency Photo Detection at 2 Μm Realized by GeSn/Ge Multiple-Quantum-Well Photodetectors with Photon-Trapping Microstructure

Integrated high responsivity photodetectors based on graphene/glass hybrid waveguide.

High-responsivity on-chip waveguide coupled germanium photodetector for 2 g m waveband

Low dark current lateral Ge PIN photodetector array with resonant cavity effect for short wave infrared imaging