Abstract:In thermoelectrics, doping is essential to augment the figure of merit. Traditional strategy, predominantly heavy doping, aims to optimize carrier concentration and restrain lattice thermal conductivity. However, this tactic can severely hamper carrier transport due to pronounced point defect scattering, particularly in materials with inherently low carrier mean-free-path. Conversely, dilute doping, although minimally affecting carrier mobility, frequently fails to optimize other vital thermoelectric parameters. Herein, we present a more nuanced dilute doping strategy in GeTe, leveraging the multifaceted roles of small-size metal atoms. A mere 4% CuPbSbTe3 introduction into GeTe swiftly suppresses rhombohedral distortion and optimizes carrier concentration through the aid of Cu interstitials. Additionally, the formation of multiscale microstructures, including zero-dimensional Cu interstitials, one-dimensional dislocations, two-dimensional planar defects, and three-dimensional nanoscale amorphous GeO2 and Cu2GeTe3 precipitates, along with the ensuing lattice softening, contributes to an ultralow lattice thermal conductivity. Intriguingly, dilute CuPbSbTe3 doping incurs only a marginal decrease in carrier mobility. Subsequent trace Cd doping, employed to alleviate the bipolar effect and align the valence bands, yields an impressive figure-of-merit of 2.03 at 623 K in (Ge0.97Cd0.03Te)0.96(CuPbSbTe3)0.04. This leads to a high energy-conversion efficiency of 7.9% and a significant power density of 3.44 W cm-2 at a temperature difference of 500 K. These results underscore the invaluable insights gained into the constructive role of nuanced dilute doping in the concurrent tuning of carrier and phonon transport in GeTe and other thermoelectric materials.

Synergetic Optimization via Indium and Rare Metal Yttrium Co-doping in GeTe Results in High Power Factor and Excellent Thermal Performance

Functionally Separated Electronic Band Engineering Via Multi-Element Doping Plus High-Density Defects Advances Board-Temperature-range Thermoelectric Performance in GeTe

Achieving Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in GeTe Alloys Via Introducing Cu2Te Nanocrystals and Resonant Level Doping.

Realizing High Thermoelectric Performance in GeTe‐Based Supersaturated Solid Solutions

Enhanced Thermoelectric Performance in GeTe by Synergy of Midgap state and Band Convergence

Modifying Roles of CuSbSe2 in Realizing High Thermoelectric Performance of GeTe

Enhancing thermoelectric performance in GeTe through Ge enrichment regulation and AgCuTe alloying

Enhancing Near-Room-Temperature GeTe Thermoelectrics through In/Pb Co-doping

High Thermoelectric Performance Achieved in Sb-Doped GeTe by Manipulating Carrier Concentration and Nanoscale Twin Grains

Enhanced near-room-temperature thermoelectric performance in GeTe

Vacancy Suppression Induced Synergetic Optimization of Thermoelectric Performance in Sb-Doped GeTe Evidenced by Positron Annihilation Spectroscopy

Achieving high thermoelectric quality factor toward high figure of merit in GeTe

Simultaneous Optimization of Carrier Concentration and Alloy Scattering for Ultrahigh Performance GeTe Thermoelectrics

Evolution of defect structures leading to high ZT in GeTe-based thermoelectric materials

Optimizing Electronic Quality Factor toward High‐Performance Ge 1− x − y Ta x Sb y Te Thermoelectrics: The Role of Transition Metal Doping

Boosting the Thermoelectric Properties of Ge 0.94 Sb 0.06 Te via Trojan Doping for High Output Power

Enhanced Thermoelectric Performance in Ge 0.955− x Sb x Te/FeGe 2 Composites Enabled by Hierarchical Defects

Valence Band Modification and Enhanced Phonon‐Phonon Interactions for High Thermoelectric Performance in GeTe

Achieving Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in GeTe Alloys via Introducing Cu 2 Te Nanocrystals and Resonant Level Doping

Medium-temperature thermoelectric GeTe: vacancy suppression and band structure engineering leading to high performance

Nuanced dilute doping strategy enables high-performance GeTe thermoelectrics