[Ultrastructural changes in progressive muscular dystrophy].

A. Fidziańska,W. Biczysko

Abstract:

What problem does this paper attempt to address?

Origin of Infrared Photoluminescence from SiO_2/Ge: SiO_2/SiO_2 Sandwiched Structure [J]

Jin-Kai Shen,Xuepeng Wu,Ruo Yuan,Chao Tan,Shu-Sheng Deng,Xuewei Bao

2001-01-01

Abstract:Enhanced 395nm ultraviolet photoluminescence (PL) has been obtained from the SiO2/Ge SiO2/ SiO2 sandwiched structure. As light source for optical data storage system, this structure will be very useful in optoelectronic integration. Simultaneously, infrared light emission peaked at 780nm was also observed in this novel structure. In this paper, we discussed the origin of the infrared PL in terms of infrared spec- troscopy (FT-IR) and FL excitation (PLE) spectra. The constancy of the 780nm PL band with annealing temperature does suggest that it can not arise from both the quantum confinement on Ge, Si nanocrystals and the oxygen deficient defects of Ge and Si, because PL from these radiative centers all have peak shifts to some extent. The experimental results from FT-IR strongly suggest that the Ge-O-Ge vibration intensity and the 780nm PL intensity have a similar behavior with annealing temperature. So it is reasonable to be- lieve that the infrared PL band is very related to Ge oxides. Further PLE examination results indicate that it has the similar excitation process to the 395nm ultraviolet PL which comes from TⅡ'(T)→S0 optical transitions in GeO color centers, which has been confirmed by many research groups. So we believe that the 780nm PL should also originate from GeO color centers. The schematic diagram of electronic states of GeO molecule is presented to describe the carriers' excitation and recombination process in this kind of centers. The TⅡ'→S0 optical transitions in GeO color center is responsible for the infrared PL. In GeO molecules, all radiative transitions are intramolecular. Thus the PL bands from the GeO color centers are hardly influ- enced by the SiO2 network. That is why 780nm infrared PL has no wavelength change with different annealing temperature. Our work paves the way for the sandwiched structure's device applications.
Visible Room-Temperature Photoluminescence of Ge-doped SiO2 Glasses Fabricated by a Sol–gel Process

Heqing Yang,Xi Yao,Xingjun Wang,Xiaoxiao Gu,Fujian Wang

DOI: https://doi.org/10.1016/j.optmat.2005.11.011

IF: 3.754

2007-01-01

Optical Materials

Abstract:Ge-doped SiO2 glasses are prepared by a sol–gel method using ethyl silicate (Si(OC2H5)4) and 3-trichologermanium propanoic acid (Cl3GeCH2CH2COOH) as starting materials. The Ge-doped SiO2 glasses show a strong room-temperature photoluminescence with peaks at 585 and 654nm under the excitation of the 514.5nm line of an Ar+ laser. The peak position of photoluminescence spectrum weakly depends on the Ge/Si ratio. The photoluminescence intensity increases sharply as the Ge/Si ratio is increased. The Ge-doped SiO2 gel glasses were characterized by X-ray diffraction, X-ray photoelectron spectroscopy and transmission electron microscopy. It reveals that Ge atoms exist as amorphous GeO2 particles in the gel glasses. The size of the amorphous Ge oxide nanoparticles increases with an increase in the content of Ge in the starting materials, and thus optical absorption edge is shifted towards longer wavelengths. The 585 and 654nm emissions may originate from the small “peroxy radical” and the nonbridging oxygens at the interface between the amorphous GeO2 core and outer SiO2 matrix, respectively.
Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

Wei Li,P. Anantha,Shuyu Bao,Kwang Hong Lee,Xin Guo,Hong Wang,Richard Soref,Chuan Seng Tan

DOI: https://doi.org/10.1109/group4.2016.7739061

2016-01-01

Abstract:Silicon and germanium are waveguide core materials for Si-based Group-IV integrated photonic circuit applications in the mid-infrared (MIR) wavelength range defined here as 2 to 15 um. In particular, Si and Ge are transparent up to 8 and 15 μm respectively, thus offering applications in communications and the sensing of biochemical, medical, and environmental variables [1]. The major problem with the MIR transition is that the most dominant platform of SOI can be used only up to 4 μm due to the high absorption loss of silicon dioxide. Therefore alternative material platforms have to be utilized for longer wavelengths. Presently, the Ge-on-Si platform (known as GOS) has been demonstrated to be workable to 15 μm-thereby offering potential for MIR applications. However, the refractive index contrast between Ge (n=4.1) and Si (n=3.4) is considerably less than that of SOI. As a result, the bend radii in GOS must be considerably larger than those in SOI, causing the footprint of GOS on-chip sensor circuits to be generally larger than those of SOI, an unwanted increase in “real estate.” What is wanted is a better alternative Ge-waveguide platform that will provide a larger core-clad index contrast than GOS as well as useful transparency and smaller channel-bend radii. To achieve those goals, the new structure proposed and realized here is Germanium on Silicon Nitride (Ge-on-Si3N4) which is referred-to here as GON. The refractive index of silicon nitride is 2.4 and it is transparent up to ~7 μm. So the index contrast in GON is 1.7 compared to 0.7 in GOS. Our simulation results show that this structure can provide a more compact integrated network whose bend radii are only a few μm. Most importantly, we have developed a new and practical wafer bonding and layer transfer technique, reported here, to realize GON.
Fabrication of core-shell nanostructures via silicon on insulator dewetting and germanium condensation: towards a strain tuning method for SiGe-based heterostructures in a three-dimensional geometry

Meher Naffouti,Thomas David,Abdelmalek Benkouider,Luc Favre,Martiane Cabie,Antoine Ronda,Isabelle Berbezier,Marco Abbarchi

DOI: https://doi.org/10.1088/0957-4484/27/30/305602

IF: 3.5

2016-07-29

Nanotechnology

Abstract:We report on a novel method for the implementation of core-shell SiGe-based nanocrystals combining silicon on insulator dewetting in a molecular beam epitaxy reactor with an ex situ Ge condensation process. With an in situ two-step process (annealing and Ge deposition) we produce two families of islands on the same sample: Si-rich, formed during the first step and, all around them, Ge-rich formed after Ge deposition. By increasing the amount of Ge deposited on the annealed samples from 0 to 18 monolayers, the islands' shape in the Si-rich zones can be tuned from elongated and flat to more symmetric and with a larger vertical aspect ratio. At the same time, the spatial extension of the Ge-rich zones is progressively increased as well as the Ge content in the islands. Further processing by ex situ rapid thermal oxidation results in the formation of a core-shell composition profile in both Si and Ge-rich zones with atomically sharp heterointerfaces. The Ge condensation induces a Ge enrichment of the islands' shell of up to 50% while keeping a pure Si core in the Si-rich zones and a ∼25% SiGe alloy in the Ge-rich ones. The large lattice mismatch between core and shell, the absence of dislocations and the islands' monocrystalline nature render this novel class of nanostructures a promising device platform for strain-based band-gap engineering. Finally, this method can be used for the implementation of ultralarge scale meta-surfaces with dielectric Mie resonators for light manipulation at the nanoscale.
The Role of Interdiffusion and Spatial Confinement in the Formation of Resonant Raman Spectra of Ge/Si(100) Heterostructures with Quantum-Dot Arrays

I. V. Kucherenko,V. S. Vinogradov,N. N. Mel'nik,L. V. Arapkina,V. A. Chapnin,K. V. Chizh,V. A. Yuryev

DOI: https://doi.org/10.48550/arXiv.1010.1927

2010-10-10

Materials Science

Abstract:The phonon modes of self-assembled Ge/Si quantum dots grown by molecular-beam epitaxy in an apparatus integrated with a chamber of the scanning tunneling microscope into a single high-vacuum system are investigated using Raman spectroscopy. It is revealed that the Ge-Ge and Si-Ge vibrational modes are considerably enhanced upon excitation of excitons between the valence band $\Lambda_3$ and the conduction band $\Lambda_1$ (the E1 and E1 + $\Delta_1$ transitions). This makes it possible to observe the Raman spectrum of very small amounts of germanium, such as one layer of quantum dots with a germanium layer thickness of 10 \r{A}. The enhancement of these modes suggests a strong electron-phonon interaction of the vibrational modes with the E1 and E1 + $\Delta_1$ excitons in the quantum dot. It is demonstrated that the frequency of the Ge-Ge mode decreases by 10 cm^-1 with a decrease in the thickness of the Ge layer from 10 to 6 \r{A} due to the spatial-confinement effect. The optimum thickness of the Ge layer, for which the size dispersion of quantum dots is minimum, is determined.
Room-temperature infrared photoluminescence and broadband photodetection characteristics of Ge/GeSi islands on silicon-on-insulator

Sudarshan Singh,John Wellington John,Arijit Sarkar,Veerendra Dhyani,Samaresh Das,Samit K. Ray

DOI: https://doi.org/10.1088/1361-6528/ad87fb

IF: 3.5

2024-10-19

Nanotechnology

Abstract:In this study, molecular beam epitaxial growth of strain-driven three-dimensional self-assembled Ge/GeSi islands on silicon-on-insulator (SOI) substrates, along with their optical and photodetection characteristics, have been demonstrated. The as-grown islands exhibit a bimodal size distribution, consisting of both Ge and GeSi alloy islands, and show significant photoluminescence (PL) emission at room temperature, specifically near optical communication wavelengths. Additionally, these samples were used to fabricate a Ge/GeSi islands/Si nanowire (NW) based phototransistor using a typical e-beam lithography process. The fabricated device exhibited broadband photoresponse characteristics, spanning a wide wavelength range (300–1600 nm) coupled with superior photodetection characteristics and relatively low dark current (~ tens of pA). The remarkable photoresponsivity of the fabricated device, with a peak value of ~11.4 A/W (λ ~ 900 nm) in the near-infrared (NIR) region and ~ 1.36 A/W (λ ~ 1500 nm) in the short-wave infrared (SWIR) region, is a direct result of the photoconductive gain exceeding unity. The room-temperature optical emission and outstanding photodetection performance, covering a wide spectral range from the visible to the SWIR region, showcased by the single layer of Ge/GeSi islands on SOI substrate, highlight their potential towards advanced applications in broadband infrared Si-photonics and imaging. These capabilities make them highly promising for cutting-edge applications compatible with complementary metal-oxide-semiconductor (CMOS) technology.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Pulmonary Rehabilitation in Lung Cancer

Hongmei Wang,Xin Liu,Shawn J. Rice,C. Belani

DOI: https://doi.org/10.1016/j.pmrj.2016.03.010

2016-10-01

Abstract:
Probing the optical near-field interaction of Mie nanoresonators with atomically thin semiconductors

Ana Estrada-Real,Ioannis Paradisanos,Peter R. Wiecha,Jean-Marie Poumirol,Aurelien Cuche,Gonzague Agez,Delphine Lagarde,Xavier Marie,Vincent Larrey,Jonas Müller,Guilhem Larrieu,Vincent Paillard,Bernhard Urbaszek

DOI: https://doi.org/10.1038/s42005-023-01211-2

2023-05-12

Communications Physics

Abstract:Optical Mie resonators based on silicon nanostructures allow tuning of light-matter-interaction with advanced design concepts based on complementary metal–oxide–semiconductor (CMOS) compatible nanofabrication. Optically active materials such as transition-metal dichalcogenide (TMD) monolayers can be placed in the near-field region of such Mie resonators. Here, we experimentally demonstrate and verify by numerical simulations coupling between a MoSe 2 monolayer and the near-field of dielectric nanoresonators. Through a comparison of dark-field (DF) scattering spectroscopy and photoluminescence excitation experiments (PLE), we show that the MoSe 2 absorption can be enhanced via the near-field of a nanoresonator. We demonstrate spectral tuning of the absorption via the geometry of individual Mie resonators. We show that we indeed access the optical near-field of the nanoresonators, by measuring a spectral shift between the typical near-field resonances in PLE compared to the far-field resonances in DF scattering. Our results prove that using MoSe 2 as an active probe allows accessing the optical near-field above photonic nanostructures, providing complementary information to sophisticated near-field microscopy equipment.

physics, multidisciplinary
CMOS-compatible antimony-doped germanium epilayers for mid-infrared low-loss high-plasma-frequency plasmonics.

Haining Chong,Zemin Xu,Zhewei Wang,Jianbo Yu,Tobias Biesner,Martin Dressel,Lan Wu,Qiang Li,Hui Ye

DOI: https://doi.org/10.1021/acsami.9b04391

IF: 9.5

2019-01-01

ACS Applied Materials & Interfaces

Abstract:Antimony (Sb) heavily doped germanium (Ge)-on-silicon (Si) epitaxial films are investigated as mid-infrared (MIR) plasmonic materials. Structural, electrical and optical properties have been improved by proper choice of dopant species (i.e. Sb) and optimization of the growth parameters (i.e. Sb flux and substrate temperature). The increased electron conductivity can be attributed to the elevated carrier concentration (1.5×10 cm) and carrier mobility (224 cmvs) in Sb-doped Ge epilayers. The measured MIR reflectivities of the Sb-doped Ge films show free-carrier-dependent properties, which leads to tunable real and imaginary parts of permittivities. Localized surface plasmon polaritons (SPP) of the bowtie antennas fabricated out of the Sb-doped Ge films are demonstrated. The fabricated antennas can provide signal enhancement for the molecular vibrational spectroscopy when these vibrational lines are spectrally in proximity to the localized plasmon resonance. These CMOS-compatible Sb-doped Ge epilayers offer a platform to study the interaction of MIR plasmon with nanostructures on chips.
Influence of GeSi Interfacial Layer on Ge–Ge Optical Phonon Mode in SiO2 Films Embedded with Ge Nanocrystals

L. Z. Liu,F. Gao,X. L. Wu,T. H. Li,Paul K. Chu

DOI: https://doi.org/10.1063/1.3257379

IF: 4

2009-01-01

Applied Physics Letters

Abstract:The Ge–Ge optical phonon peak at 300 cm−1 acquired from amorphous SiO2 films embedded with Ge nanocrystals by Raman scattering is sensitive to the Si content. When the Si concentration is high, a thin GeSi interfacial layer forms around the Ge nanocrystals. A tensile stress is produced to partially offset the compressive stress imposed by the SiO2 matrix on the Ge nanocrystals, consequently downshifting the frequency of the optical phonon and increasing its linewidth. Theoretical calculation based on phonon confinement and compressive effects discloses that the interfacial layer plays a crucial role in the optical phonon behavior.
(Digital Presentation) Ge-on-insulator Platform for Mid-infrared Photonic Integrated Circuits

Mitsuru Takenaka,Ziqiang Zhao,Chong Pei Ho,Takumi Fujigaki,Tipat Piyapatarakul,Yuto Miyatake,Rui Tang,Kasidit Toprasertpong,Shinichi Takagi

DOI: https://doi.org/10.1149/ma2022-02321175mtgabs

2022-11-24

ECS Meeting Abstracts

Abstract:Since mid-infrared (MIR) wavelengths have a great potential for optical communication, sensing, and quantum information, Si-based MIR photonic integrated circuits (PICs) have been developed by leveraging Si photonics technology for near-infrared wavelengths. However, the transparency wavelength window of Si is from 1.2 μm to 8 μm, limiting the available wavelengths in the MIR spectrum. Ge is emerging as a waveguide material to overcome this difficulty because Ge is transparent in the entire MIR spectrum. A Ge-on-Si waveguide is one of the promising platform for a MIR PICs. We have also proposed a Ge-on-insulator (GeOI) platform for MIR integrated photonics [1]. The strong optical confinement in a GeOI waveguide enables an ultracompact MIR PIC. Using wafer bonding and smart-cut, a GeOI wafer was successfully fabricated [2]. As a result, we have demonstrated various Ge passive devices, thermo-optic phase shifters, and modulators on a GeOI platform [3][4]. The propagation loss of a GeOI waveguide is one of the issues. The crystal defects induced by hydrogen implantation for smart-cut generates holes in a Ge film. As a result, evening using an n-type Ge donor wafer for smart-cut, a final Ge layer tends to be p-type. Since free-hole absorption in Ge is significant, the propagation loss of a p-type GeOI becomes large. To suppress hole generation, the optimization of the hydrogen implantation conditions was conducted. We found that the higher the implantation energy was, the deeper the center of the defect position was from a Ge surface [5]. When the implantation energy increases from 80 keV to 160 keV, the defects can be removed from a 300-nm-thick Ge device layer, enabling an n-type GeOI wafer. As a result, a low-loss GeOI waveguide with a propagation loss of 2.3 dB/cm was demonstrated. The monolithic integration of Ge passive waveguides and photodetectors (PDs) is also essential for a MIR PIC. We examined the defect-assist photodetection mechanism in a GeOI waveguide with a lateral PIN junction. When a reverse voltage was applied to the PIN junction, the substantial photocurrent was observed at a wavelength of 2 μm for which Ge is transparent. The defect-assist photodetection is expected to be enhanced due to the large intrinsic carrier density in Ge. As a result, the responsivity of 0.25 A/W was obtained at -5 V. In conclusion, we have developed a GeOI photonics platform for MIR wavelengths. We have achieved a low-loss Ge waveguide, PDs, and optical modulators, the indispensable building blocks for large-scale MIR PICs. The functionality of a GeOI platform can be extended with emerging materials including graphene and phase change materials. This work was partly based on the results from the project JPNP13004, commissioned by the New Energy and Industrial Technology Development Organization (NEDO) and supported by JST-Mirai Program Grant Number JPMJMI20A1, JSPS KAKENHI Grant Number JP20H02198, and the Canon Foundation. Reference [1] Z. Zhao, C.-M. Lim, C. Ho, K. Sumita, Y. Miyatake, K. Toprasertpong, S. Takagi, and M. Takenaka, "Low-loss Ge waveguide at the 2-μm band on an n-type Ge-on-insulator wafer," Opt. Mater. Express, vol. 11, no. 12, pp. 4097–4106, 2021. [2] J. Kang, X. Yu, M. Takenaka and S. Takagi, "Impact of thermal annealing on Ge-on-Insulator substrate fabricated by wafer bonding," Materials Science in Semiconductor Processing, vol. 42, Part 2, pp. 259-263, 2016. [3] M. Takenaka et al., "Heterogeneous CMOS Photonics Based on SiGe/Ge and III–V Semiconductors Integrated on Si Platform," IEEE J. Sel. Top. Quantum Electron., vol. 23, no. 3, pp. 64–76, May 2017. [4] T. Fujigaki, S. Takagi, and M. Takenaka, "High-efficiency Ge thermo-optic phase shifter on Ge-on-insulator platform," Opt. Express, vol. 27, no. 5, p. 6451, Mar. 2019. [5] Z. Zhao et al., "Low-loss Ge waveguide at the 2-μm band on an n-type Ge-on-insulator wafer," Opt. Mater. Express, OME, vol. 11, no. 12, pp. 4097–4106, Dec. 2021. [6] Z. Zhao, C.-P. Ho, K. Toprasertpong, S. Takagi, and M. Takenaka, "Monolithic Germanium PIN Waveguide Photodetector Operating at 2 μm Wavelengths," Optical Fiber Communication Conference (OFC2020), W4G.3, San Diego, 8–12 March 2020.
Laser recrystallization and inscription of compositional microstructures in crystalline SiGe-core fibres

David A. Coucheron,Michael Fokine,Nilesh Patil,Dag Werner Breiby,Ole Tore Buset,Noel Healy,Anna C. Peacock,Thomas Hawkins,Max Jones,John Ballato,Ursula J. Gibson

DOI: https://doi.org/10.1038/ncomms13265

IF: 16.6

2016-10-24

Nature Communications

Abstract:Glass fibres with silicon cores have emerged as a versatile platform for all-optical processing, sensing and microscale optoelectronic devices. Using SiGe in the core extends the accessible wavelength range and potential optical functionality because the bandgap and optical properties can be tuned by changing the composition. However, silicon and germanium segregate unevenly during non-equilibrium solidification, presenting new fabrication challenges, and requiring detailed studies of the alloy crystallization dynamics in the fibre geometry. We report the fabrication of SiGe-core optical fibres, and the use of CO2 laser irradiation to heat the glass cladding and recrystallize the core, improving optical transmission. We observe the ramifications of the classic models of solidification at the microscale, and demonstrate suppression of constitutional undercooling at high solidification velocities. Tailoring the recrystallization conditions allows formation of long single crystals with uniform composition, as well as fabrication of compositional microstructures, such as gratings, within the fibre core.

multidisciplinary sciences
Size-independent low-frequency Raman scattering in Ge-nanocrystal-embedded SiO_2 films

L. Z. Liu,X. L. Wu,F. Gao,Y. M. Yang,T. H. Li,Paul K. Chu

DOI: https://doi.org/10.1364/OL.35.001022

IF: 3.6

2010-01-01

Optics Letters

Abstract:The peak position and linewidth of the low-frequency Raman mode observed from amorphous silica films embedded with Ge nanocrystals doped with Si show a size-independent behavior. Spectral analysis reveals the formation of a thin amorphous GeSi layer on the surface of the Ge nanocrystal. Theoretical calculation based on a modified three-region model discloses that the acoustic impedance of the interfacial GeSiO layer is responsible for the size-independent behavior. During high-temperature annealing, Ge atoms are segregated from the interface into the core, and the GeSiO interface layer is converted to SiO2, leading to disappearance of the size-independent vibration mode. (C) 2010 Optical Society of America
Amorphous Selenium Mie Resonators for Infrared Meta-Optics

Danveer Singh,Michal Poplinger,Avraham Twitto,Rafi Snitkoff,Pilkhaz Nanikashvili,Ori Azolay,Adi Levi,Chen Stern,Gili Cohen Taguri,Asaf Albo,Doron Naveh,Tomer Lewi

DOI: https://doi.org/10.48550/arXiv.2112.14989

2021-12-30

Abstract:Applying direct growth and deposition of optical surfaces holds great promise for the advancement of future nanophotonic technologies. Here, we report on a chemical vapor deposition (CVD) technique for depositing amorphous selenium (a-Se) spheres by desorption of selenium from Bi2Se3 and re-adsorption on the substrate. We utilize this process to grow scalable, large area Se spheres on several substrates and characterize their Mie-resonant response in the mid-infrared (MIR) spectral range. We demonstrate size-tunable Mie resonances spanning the 2-16 um spectral range, for single isolated resonators and large area ensembles, respectively. We further demonstrate strong absorption dips of up to 90% in ensembles of particles in a broad MIR range. Finally, we show that ultra-high-Q resonances arise in the case where Se Mie-resonators are coupled to low-loss epsilon-near-zero (ENZ) substrates. These findings demonstrate the enabling potential of amorphous Selenium as a versatile and tunable nanophotonic material that may open up avenues for on-chip MIR spectroscopy, chemical sensing, spectral imaging and large area metasurface fabrication.

Optics,Applied Physics
Selective Epitaxy of Germanium on silicon for the fabrication of CMOS compatible short-wavelength infrared photodetectors

Diana Ryzhak,Agnieszka Anna Corley-Wiciak,Patrick Steglich,Yuji Yamamoto,Jacopo Frigerio,Raffaele Giani,Andrea De Iacovo,Davide Spirito,Giovanni Capellini

DOI: https://doi.org/10.1016/j.mssp.2024.108308

IF: 4.1

2024-03-14

Materials Science in Semiconductor Processing

Abstract:Here we present the selective epitaxial growth of Ge on Si using reduced pressure chemical vapor deposition on SiO 2 /Si solid masks realized on 200 mm Si wafers, aiming at manufacturing integrated visible/short-wavelength infrared photodetectors. By a suitable choice of the reactants and of the process conditions, we demonstrated highly selective and pattern-independent growth of Ge microstructure featuring high crystalline quality. The Ge "patches" show a distinct faceting, with a flat top (001) facet and low energy facets such as e.g. {113} and {103} at their sidewalls, independently on their size. Interdiffusion of Si in to the Ge microcrystals is limited to an extension of ∼20 nm from the heterointerface. The Ge patches resulted to be plastically relaxed with threading dislocation density values better or on par than those observed in continuous two-dimensional Ge/Si epilayer in the low 10 7 cm −2 range. A residual tensile strain was observed for patches with size >10 μm, due to elastic thermal strain accumulation, as confirmed by μ-Raman spectroscopy and μ-photoluminescence characterization. Polarization-dependent Raman mapping highlights the strain distribution associated to the tridimensional shape. On this material, Ge photodiodes were fabricated and characterized, showing promising optoelectronic performances.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Photonic bound states in the continuum in Si structures with the self-assembled Ge nanoislands

Sergey A. Dyakov,Margarita V. Stepikhova,Andrey A. Bogdanov,Alexey V. Novikov,Dmitry V. Yurasov,Zakhary F. Krasilnik,Sergei G. Tikhodeev,Nikolay A. Gippius

DOI: https://doi.org/10.48550/arXiv.2006.06086

2020-06-11

Abstract:Germanium self-assembled nanoislands and quantum dots are very prospective for CMOS-compatible optoelectronic integrated circuits but their luminescence intensity is still insufficient for many practical applications. Here, we demonstrate experimentally that photoluminescence of Ge nanoislands in silicon photonic crystal slab with hexagonal lattice can be dramatically enhanced due to the involvement in the emission process of the bounds states in the continuum. We experimentally demonstrate more than two orders of magnitude peak photoluminescence enhancement and more than one order of magnitude integrated PL enhancement in a photonic crystal slab compared with the non-structured sample area. We theoretically study this effect by the Fourier modal method in the scattering matrix form and demonstrate the appearance of quasi-normal guided modes in our photonic crystal slab. We also describe their symmetry in terms of group theory. Our work paves the way towards a new class of optoelectronic components compatible with silicon technology.

Optics
Raman-Scattering Spectroscopy of Gesi/Si Strained-Layer Superlattice

Rong Zhang,Youdou Zheng,Shulin Gu,Liqun Hu

DOI: https://doi.org/10.1557/proc-298-145

1993-01-01

Abstract:Raman scattering measurements have been carried out on Si1-x Gex/Si SLS. It is found that the Ge-Ge optic phonon frequency shiit is proportional to strain in the SiGe film, and the Ge-Ge strain shift coefficient is 408cm−1. Based on these study a new method for analyzing the Raman spectra of SiGe/Si SLS has been proposed. Using the new method we can obtain the composition of the alloy sublayers as well as the strain in SLS. The strain distribution in the SiGe/Si SLS has been discussed, and strain in both SiGe and Si sublayers of the SLS have been calculated.
Use of optically detected magnetic resonance to correlate germanium electron centers with UV absorption bands in X-ray irradiated germanosilicate glasses

D. Poulios,N. P. Bigelow,J. P. Spoonhower

DOI: https://doi.org/10.48550/arXiv.cond-mat/0008185

2000-08-11

Materials Science

Abstract:The relationship between paramagnetic defect centers and UV absorption bands simultaneously generated by ionizing radiation in Ge-doped SiO2 glass is investigated using magneto-optical techniques. A sample of 7.0 mol% Ge-doped SiO2 was exposed to X-ray radiation, which resulted in the formation of absorption bands centered at 4.4 eV and 5.7 eV as well as electron spin resonance (ESR) signals attributed to the Ge(1) and Ge(2) defects. To isolate paramagnetic contributions to the induced optical absorption, the magnetic circular dichroism absorption (MCDA) spectrum was measured at several different temperatures over the range 2.00-6.21 eV. The optically detected magnetic resonance (ODMR) spectrum was then obtained at 4.42 eV via microwave-induced changes in the MCDA signals in order to unambiguously correlate this optical transition with a particular ESR signal. The ODMR data indicates that the Ge(1) center is responsible for this absorption band, providing the first unequivocal correlation of ESR and optical properties for this defect. In addition, evidence of a weakly absorbing paramagnetic defect was found at 5.65 eV that appears to be related to the Ge(2) center.
Germanium based photonic components toward a full silicon/germanium photonic platform

V. Reboud,A. Gassenq,J.M. Hartmann,J. Widiez,L. Virot,J. Aubin,K. Guilloy,S. Tardif,J.M. Fédéli,N. Pauc,A. Chelnokov,V. Calvo

DOI: https://doi.org/10.1016/j.pcrysgrow.2017.04.004

IF: 4.077

2017-06-01

Progress in Crystal Growth and Characterization of Materials

Abstract:Lately, germanium based materials attract a lot of interest as they can overcome some limits inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red sensing applications. The quality of epitaxially grown intrinsic and doped materials is critical to reach the targeted performances. One of the main challenges in the field remains the fabrication of efficient group-IV laser sources compatible with the microelectronics industry, seen as an alternative to the complexity of integration of III-V lasers on Si. The difficulties come from the fact that the group-IV semiconductor bandgap has to be transformed from indirect to direct, using high tensile strains or by alloying germanium with tin. Here, we review recent progresses on critical germanium-based photonic components such as waveguides, photodiodes and modulators and discuss the latest advances towards germanium-based lasers. We show that novel optical germanium-On-Insulator (GeOI) substrates fabricated by the Smart Cut™ technology is a key feature for future Si - Complementary Metal Oxide Semiconductor (CMOS) - compatible laser demonstration. This review hints at a future photonics platform based on germanium and Silicon.

materials science, characterization & testing,crystallography
Re-examination of the SiGe Raman spectra - Linear chain approximation and ab initio calculations

O. Pagès,J. Souhabi,V. J. B. Torres,A. V. Postnikov,K. C. Rustagi

DOI: https://doi.org/10.48550/arXiv.1109.6585

2011-09-29

Materials Science

Abstract:We propose a (three-dimension) -> (one-dimension) shift of paradigm for basic understanding of Raman spectra of random Si-Ge. Fair contour modeling of Raman spectra is achieved along the linear chain approximation via 1D-cluster version of the phenomenological Percolation scheme, originally developed for zincblende alloys, after ab initio calibration of the intrinsic Si-Si, Ge-Ge and Si-Ge Raman efficiencies. The 1D-cluster scheme introduces a seven-oscillator [1x(Ge-Ge), 4x(Si-Ge), 2x(Si-Si)] Raman behavior for SiGe, which considerably deviates from the currently admitted six-oscillator [1x(Ge-Ge), 1x(Si-Ge), 4x(Si-Si)] one. The 1D-cluster re-assignment of Raman lines is based on remarkable intensity-interplays with composition, known from the literature, but so far not properly understood. It is independently supported by ab initio calculation of the frequencies of bond-stretching modes along prototype impurity motifs taken as quasi-linear. Different numbers of Raman modes per bond indicate different sensitivities to the local environment of the Ge-Ge (insensitive), Si-Si (sensitive to 1st neighbors) and Si-Ge (sensitive to 2nd neighbors) bond-stretchings. Last, we compare the SiGe Percolation scheme with the current version for zincblende alloys, using GaAsP as a natural reference. The SiGe vs. GaAsP comparison is supported by ab initio calculation of local lattice relaxation/dynamics related to prototype impurity motifs that are directly transposable to the two crystal structures.

[Ultrastructural changes in progressive muscular dystrophy].

Origin of Infrared Photoluminescence from SiO_2/Ge: SiO_2/SiO_2 Sandwiched Structure [J]

Visible Room-Temperature Photoluminescence of Ge-doped SiO2 Glasses Fabricated by a Sol–gel Process

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

Fabrication of core-shell nanostructures via silicon on insulator dewetting and germanium condensation: towards a strain tuning method for SiGe-based heterostructures in a three-dimensional geometry

The Role of Interdiffusion and Spatial Confinement in the Formation of Resonant Raman Spectra of Ge/Si(100) Heterostructures with Quantum-Dot Arrays

Room-temperature infrared photoluminescence and broadband photodetection characteristics of Ge/GeSi islands on silicon-on-insulator

Pulmonary Rehabilitation in Lung Cancer

Probing the optical near-field interaction of Mie nanoresonators with atomically thin semiconductors

CMOS-compatible antimony-doped germanium epilayers for mid-infrared low-loss high-plasma-frequency plasmonics.

Influence of GeSi Interfacial Layer on Ge–Ge Optical Phonon Mode in SiO2 Films Embedded with Ge Nanocrystals

(Digital Presentation) Ge-on-insulator Platform for Mid-infrared Photonic Integrated Circuits

Laser recrystallization and inscription of compositional microstructures in crystalline SiGe-core fibres

Size-independent low-frequency Raman scattering in Ge-nanocrystal-embedded SiO_2 films

Amorphous Selenium Mie Resonators for Infrared Meta-Optics

Selective Epitaxy of Germanium on silicon for the fabrication of CMOS compatible short-wavelength infrared photodetectors

Photonic bound states in the continuum in Si structures with the self-assembled Ge nanoislands

Raman-Scattering Spectroscopy of Gesi/Si Strained-Layer Superlattice

Use of optically detected magnetic resonance to correlate germanium electron centers with UV absorption bands in X-ray irradiated germanosilicate glasses

Germanium based photonic components toward a full silicon/germanium photonic platform

Re-examination of the SiGe Raman spectra - Linear chain approximation and ab initio calculations