Abstract:Ga-doped ZnO nanowire has a wurtzite hexagonal structure and has been prepared in a horizontal tube furnace by thermal chemical vapor deposition method. In this work, we fabricate the Ga-doped ZnO nanowires without a metalized catalyst through the thermal evaporation of the Zn powers and Ga degrees C.Temperature is the metals at a low growth temperature of 550 d critical experimental parameter for the formation of Ga-dope the ZnO nanowires.This evaporation process can be attributed to Ga dopant In the lattice position of he ZnO nanowires. As shown In scanning electron microscopy (SEM), nanowires of different diameters are evenly arranged on the Si substrate and nucleated via a self-catalysed mechanism by depositing a layer of ZnO film as the crystallization plant before growing ZnO nanowires on the film. Self-catalyzed growth of Ga-doped ZnO nanowires are of diameters 35-150nm and lengths up to several ones of micrometers. High resolution Transmission electron microscope (HRTEM) those lattice image of Ga doped ZnO nanowires, wherein nanowires are seen a lattice of a=3.25 angstrom and c=5.19 angstrom. As determine by selected area diffraction (SAD), the growth direction of Ga-doped ZnO nanowires is [001] and the nanowire consists of single-crystailline ZnO crystals.The luminescence spectra of the Ga-doped ZnO nanowires exhibit a UV band at 374nm and a strong green band at 498nm. In addition, the Ga-doped ZnO nano,wires with different diameters have a larger green light/UV ratio due to the recombination of holes with the electrons occupying the singly ionized more O vacancies that are larger In number. By virue of the doping of Ga, we observe that Ga-doped ZnO nanowires becomes broader and shifts to a longer wave 498nm at a lower energy and a strong green emission as compared to the undoped one in the cathodoluminescence and photoluminescence spectra. The Ga-doped ZnO nanowires; have a greater field-enhancement factor than the undoped ZnO nanowies. The Ga-doped ZnO nanowires with a low turn on field (12V mu m(-1)) are apparently lower than the undoped ZnO nanowires. Our results demonstrate that Ga-doped ZnO nanowires can provide the possibility of application In optoelectric nanodevices.

Influences of Ga Doping on Crystal Structure and Polarimetric Pattern of SHG in ZnO Nanofilms

Effect of Na Concentrations on Microstructure and Optical Properties of Zno Films

Surface Morphology and Optical Properties of Na-doped ZnO Thin Films

Microstructure, Optical and Photoluminescence Properties of Ga-doped ZnO Films Prepared by Pulsed Laser Deposition

Preparation and Characterization of Na-doped ZnO Thin Films by Sol–gel Method

Influence of Dopant Content on Morphology and Optical Constants of ZnO:Na Films by Sol-Gel Method

Preparation and Characterization of Mg-doped ZnO Thin Films by Sol–gel Method

Effect of Magnesium Doping on the Light-Induced Hydrophilicity of Zno Thin Films

Gallium Doping Dependence of Single-Crystal N-Type Zno Grown by Metal Organic Chemical Vapor Deposition

Effect of gallium doping on the structural, optical and electrical properties of zinc oxide thin films prepared by spray pyrolysis

Structural and Electrical Properties of Single Crystalline Ga-Doped Zno Thin Films Grown by Molecular Beam Epitaxy

Elucidation of structural, morphological, optical and photoluminescence properties of single and (In, Ga) co-doped ZnO nanocrystalline thin films

Characterization of Ga-doped ZnO Nanowires Grown by Thermal Chemical Vapor Deposition

Field Emission and Optical Properties of Ga-doped ZnO Nanowires Synthesized Via Thermal Evaporation

Gallium doping in transparent conductive ZnO thin films prepared by chemical spray pyrolysis

Defect engineering, microstructural examination and improvement of ultrafast third harmonic generation in GaZnO nanostructures: a study of e-beam irradiation

Suppression of Visible Light Emission of Zno Nanostructures by Ga-Doping

Tailoring of the Structural, Optical, and Electrical Characteristics of Sol-Gel-Derived Magnesium-Zinc-Oxide Wide-Bandgap Semiconductor Thin Films via Gallium Doping

Investigation of the Structural, Electrical, and Optical Properties of the Nano-Scale GZO Thin Films on Glass and Flexible Polyimide Substrates

Synthesis of Gadolinium Doped ZnO Nanomaterials Using the Modified-Solvothermal Method and Studied the Effect of Gadolinium on the Structural, Morphological, and Optical Properties

Fermi-Level Band Filling and Band-Gap Renormalization in Ga-Doped Zno