Abstract:Perovskite‐organic multilayer can potentially ease the population inversion for amplified spontaneous emission or even lasing, but their fabrication process and structural design still require a tough optimization to make them valuable photonic platforms. Photo‐stable multiple stacks comprising single‐source evaporated CsPbBr3 perovskite and organic semiconductor interlayers are fabricated and observed amplified spontaneous emission for the first time, excluding co‐evaporation that demands complex optimization. Metal halide perovskites are promising semiconductors with promising applications in optoelectronic and photonic technologies. When coherent emission applications are targeted, materials with lower lasing thresholds and increased stabilities must be developed to increase the performance under continuous wave optical pumping condition and finally allow the realization of the long sought‐after electrically pumped lasers. Perovskite multiple‐quantum‐wells (MQWs) can potentially ease the population inversion by confining photoexcitation within the heterostructure's wells, but their fabrication process and structural design still require a delicate optimization to make them valuable photonic platforms. Here, perovskite MQWs are fabricated based on organic semiconductors and CsPbBr3, using a facile and easily scalable sequential single‐source vacuum evaporation method. Perovskite with the organic interlayer shows radically enhanced phase stability, passivated defects, and improved radiative recombination properties. In this way, upon proper design of the heterostructure wells and barriers thicknesses, optically pumped amplified spontaneous emission can be achieved. This work reports an effective fabrication approach for perovskite MQWs, while providing a deeper understanding of their photophysical properties to foster their application as coherent light emitters.

Perovskite-Based Artificial Multiple Quantum Wells

Perovskite Multiple Quantum Well Superlattices: Potentials and Challenges

Quantum Well Intermixing For The Realization Of Photonic Integrated Circuits

Single Halide Perovskite/Semiconductor Core/Shell Quantum Dots with Ultrastability and Nonblinking Properties

Photonic Integrated Circuits and Components Using Quantum Well Intermixing

Photonic-integrated circuits and components using quantum well intermixing

Ultrashallow Heavily Constrained Quantum Wells: the Cradle for Fully Electrically Controlled and Microwave Coupled Quantum Bits

Multi-bandgap Photonic Materials and Devices Fabricated by UV-laser Induced Quantum Well Intermixing

Photonic integrated circuits fabricated using quantum well intermixing

Polarization-insensitive Quantum Well Optoelectronic Devices Using Quantum Well Shape Modification

Stabilizing Single‐Source Evaporated Perovskites with Organic Interlayers for Amplified Spontaneous Emission

Molecularly Controlled Quantum Well Width Distribution and Optoelectronic Properties in Quasi-2D Perovskite Light-Emitting Diodes

Molecular Beam Epitaxial Growth of IV–VI Multiple Quantum Well Structures on Si(111) and BaF2(111) and Optical Studies of Epilayer Heating

Mid-Infrared Photoluminescence of Pbse/Pbsrse Multiple Quantum Wells Grown by Molecular Beam Epitaxy

Enhancing Multiexcitonic Emission in Metal-Halide Perovskites by Quantum Confinement

Regulating Phase Distribution of Dion–Jacobson Perovskite Colloidal Multiple Quantum Wells Toward Highly Stable Deep‐Blue Emission

Trap-Enabled Long-Distance Carrier Transport in Perovskite Quantum Wells

Pure-Phase Perovskite Quantum Well for Green Light-Emitting Diodes

Engineering Perovskite Emissions via Optical Quasi-Bound-States-in-the-Continuum

Phase Control and Singlet Energy Transfer Enabled by Trimethylamine Modified Boron Dipyrromethene for Stable CsPbBr3 Quantum Wells

Perovskite light-emitting diodes based on solution-processed self-organized multiple quantum wells