Abstract:The effects of Be/Mg/Ca doping on the optical properties of GaN have been widely investigated experimentally and theoretically. However, metalorganic chemical vapor deposition and vacuum coating methods are used in the experiments, and interstitial H is difficult to remove in GaN. The effects of Be/Mg/Ca doping and interstitial H coexistence with Ga vacancy on the photocatalytic performance of GaN are rarely explored in a vacuum environment. This study examines the formation energy and electronic structure of Ga34MN36 (M = Be/Mg/Ca) and Ga34MHiN36 (M = Be/Mg/Ca) systems and the main factors affecting their photocatalytic performance by using the generalized gradient approximation plane wave ultrasoft pseudopotential + U method within the framework of density functional theory. Results show that the formation energy of the Ga34MN36 (M = Be/Mg/Ca) and Ga34MHiN36 (M = Be/Mg/Ca) systems are greater under Ga-rich conditions than under N-rich conditions, indicating that both doping systems are more readily formed and have a more stable structure under N-rich conditions than under Ga-rich conditions. The visible light effect, electric dipole moment, effective mass, and oxidation–reduction reaction affecting the photocatalytic performance of the doping systems were analyzed. Compared with the Ga34MN36 (M = Be/Mg/Ca) system, the Ga34CaHiN36 system shows a more obvious red-shift in the absorption spectrum, a larger absorption spectrum intensity, a better carrier activity, a faster carrier separation rate, a longer carrier lifetime, and a stronger oxidation ability. These results suggest that the Ga34CaHiN36 system is an excellent photocatalyst that can be utilized in designing and preparing novel GaN photocatalysts.

First-principles study on the effects of different valence VZn and Ag doping with Hi co-existence on the magnetism and photocatalysis of ZnO

First principles study of the effect of (Mg, C) doping and Zn vacancies on the carrier activity, lifetime, visible light effect, and oxidation–reduction reaction of ZnO(0 0 1) monolayers

Zn vacancy induced ferromagnetism in K doped ZnO

Structural, magnetic and optical properties of vanadium doped zinc oxide: Systematic first-principles investigations

Effect of Cu doping on the electronic structure, magnetic and optical properties of GaN/ZnS heterojunctions: a first-principles study

Magnetic and optoelectronic modification of graphene-like ZnO monolayer by doping of Ag, Au and Pt atoms

First-principles study of the effects of interstitial H and point vacancies on the photocatalytic performance of Be/Mg/Ca-doped GaN

First-Principles Study of Magnetic Properties in V-Doped Zno

Tuning lattice defects and photocurrent response of ZnO thin films by Mg doping and Ar-H 2 atmospheric plasma treatment

Dependence of Magnetism on Doping Concentration in V-Doped Bulk ZnO

First-principles study of diffusion of Li, Na, K and Ag in ZnO.

First-principles study on the effects of Zr doping and interstitial H and O vacancy on the optoelectronic properties of [math]-Ga2O3

Study of influence of the vacuum annealing on physical properties of ZnMnO:N

First-Principles Calculation of ZnO Doped with Ag

Adjusting the covalency of metal-oxygen bonds in CuBi2O4 by Zn cation doping to achieve highly efficient photocathodes

Ag@ZnO Core-Shell Nanoparticles Study by First Principle: the Structural, Magnetic and Optical Properties

Modulating Magnetism of ZnO:C with Vacancy and Substitution

Effect of different valence states point defects on carrier activity and lifetime and photocatalytic properties of GaN:Be/Mg/Ca system

First principles study on Zn doped MgO using Hubbard U correction

Electronic, Magnetic, and Optical Properties of Metal Adsorbed g-ZnO Systems

First-principle study on the effect of high Li–2N co-doping on the conductivity of ZnO