Abstract:Ag/ZnO composites have been widely applied in various fields, whilst their poor interface adhesion limits the integrative performance of these composites. Recently, metallic doping has been considered as a versatile strategy to tune the interface adhesion of metal/ceramic interfaces. However, the relationship between interface adhesion and electronic structure induced by doping at the Ag/ZnO interface needs to be further clarified. In this work, we investigated the work of separation ( W sep , value to estimate of interface adhesion), effective bond order and charge movement of Ag/ZnO interfaces with various dopants under four typical configurations by DFT calculations. It demonstrated that the dopants with lower electronegativity could enhance the interface adhesion of Ag/ZnO due to the interfacial Ag-O bonds with higher covalency level and shorter bond-lengths induced by larger charge transfer ( Δq ) and a higher degree of the p-d hybridization between the interfacial Ag and O atoms, while the dopants with higher electronegativity could weaken the interface adhesion. Moreover, we found that three atomic parameters (bond-lengths, -the average of effective bond order, Δq ) were able to quantitatively rationalize the W sep . This work advances the understanding of doping effect on the interface adhesion of Ag/ZnO interfaces that can be extended to other metal/ceramic interfaces.

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