Abstract:The etch profile control for the amorphous carbon layer (ACL) is an important step in the 3D NAND fabrication process. Because ACL is the mask material for defining the pattern of the high-aspect-ratio-contact (HARC) dielectric ONON layer etch process, precise control of its etch profile is necessary. Specifically, an ideal ACL mask profile should be free of symptoms such as hole circularity distortion, profile twisting, bowing, and undercutting. In order to achieve this desired etch performance, knowledge of various etch contributing factors must be systematically derived and applied, including etch surface chemistry, high-aspect-ratio (HAR) etchant transport, ion flux and ion energy angle distribution function (EADF) control, etc. In this work, we investigate the ACL etch fundamental characteristics through combined 2D chamber-scale plasma simulations with the hybrid plasma-equipment model (HPEM) and 3D etch profile simulations with the Monte-Carlo Feature Profile Model (MCFPM) for an inductively-coupled-plasma (ICP) reactor with RF bias at the substrate. In particular, we focus on the profile trends under different reactant fluxes and energies. Our findings indicate that maintaining a neutral-starved (ion-rich) etch regime is essential for mitigating both the channel hole etch circularity distortion and the slit etch profile twisting. To achieve this desired etch regime, the HAR ion, and neutral transport must controlled by the RF bias power and frequency, substrate temperature, etc. Furthermore, especially in this neutral-limited etch regime which is necessary for distortion and twisting mitigation, the control of the consequent aspect-ratio dependent etching (ARDE), as well as maintaining the critical dimension (CD) and reducing bowing and undercutting are also necessary. For this purpose, atomistic density functional theory (DFT) calculations have been applied to compare the reaction energetics for various ALD-like sidewall passivation chemistries. Specifically, we propose a new process based on its favorable reaction energetics. Experimental cross-section images have matched simulation results. In conclusion, our insights have provided guidance for process optimization and tool design to meet industrial demands.

Machine learning Assists on High Aspect Ratio Slit Trench Etching in 3D NAND

Investigation of shape etching on multi-layer SiO2/poly-Si for 3D NAND architecture

Machine learning aided process control: critical dimension uniformity control of etching process in 1z nm DRAM

Ellipsometric critical dimension metrology employing mid-infrared wavelengths for high-aspect-ratio channel hole module etch processes

High-aspect-ratio amorphous carbon mask etch profile control through plasma and surface chemistry optimization

Prediction of Random Grain Boundary Variation Effect of 3-D NAND Flash Memory Using a Machine Learning Approach

Deep Learning Regression of VLSI Plasma Etch Metrology

Angstrom-accuracy multilayer thickness determination using optical metrology and machine learning

Machine Learning Based Wafer Defect Detection

Optimizing Plasma Etching: Integrating Precise Three-Dimensional Etching Simulation and Machine Learning for Multi-Objective Optimization

3-D NAND Oxide/Nitride Tier Stack Thickness and Zonal Measurements With Infrared Metrology

Optimal Energetic-Trap Distribution of Nano-Scaled Charge Trap Nitride for Wider Vth Window in 3D NAND Flash Using a Machine-Learning Method

A Machine Learning Approach for Optimization of Channel Geometry and Source/Drain Doping Profile of Stacked Nanosheet Transistors

Applying Machine Learning Models on Metrology Data for Predicting Device Electrical Performance

Machine Learning-Assisted Device Modeling With Process Variations for Advanced Technology

Litho-aware redundant local-loop insertion framework with convolutional neural network

Selective Wet Etching Technology in 3D NAND Flash Manufacturing

Machine Learning-Based Device Modeling and Performance Optimization for FinFETs

A Novel Channel Preparation Scheme to Optimize Program Disturbance in Three-Dimensional NAND Flash Memory

Machine Learning Applied to Electron Beam Lithography to Accelerate Process Optimization of a Contact Hole Layer

Beyond 10 μm Depth Ultra-High Speed Etch Process with 84% Lower Carbon Footprint for Memory Channel Hole of 3D NAND Flash over 400 Layers