Highly Heterogeneous Epitaxy of Flexoelectric BaTiO3-δ Membrane on Ge.
Liyan Dai,Jinyan Zhao,Jingrui Li,Bohan Chen,Shijie Zhai,Zhongying Xue,Zengfeng Di,Boyuan Feng,Yanxiao Sun,Yunyun Luo,Ming Ma,Jie Zhang,Sunan Ding,Libo Zhao,Zhuangde Jiang,Wenbo Luo,Yi Quan,Jutta Schwarzkopf,Thomas Schroeder,Zuo-Guang Ye,Ya-Hong Xie,Wei Ren,Gang Niu
DOI: https://doi.org/10.1038/s41467-022-30724-7
IF: 16.6
2022-01-01
Nature Communications
Abstract:The integration of complex oxides with a wide spectrum of functionalities on Si, Ge and flexible substrates is highly demanded for functional devices in information technology. We demonstrate the remote epitaxy of BaTiO 3 (BTO) on Ge using a graphene intermediate layer, which forms a prototype of highly heterogeneous epitaxial systems. The Ge surface orientation dictates the outcome of remote epitaxy. Single crystalline epitaxial BTO 3-δ films were grown on graphene/Ge (011), whereas graphene/Ge (001) led to textured films. The graphene plays an important role in surface passivation. The remote epitaxial deposition of BTO 3-δ follows the Volmer-Weber growth mode, with the strain being partially relaxed at the very beginning of the growth. Such BTO 3-δ films can be easily exfoliated and transferred to arbitrary substrates like Si and flexible polyimide. The transferred BTO 3-δ films possess enhanced flexoelectric properties with a gauge factor of as high as 1127. These results not only expand the understanding of heteroepitaxy, but also open a pathway for the applications of devices based on complex oxides.