Abstract:Two micrometer waveband has attracted much attention due to even-increasing data transmission and sensing needs. Waveguide-integrated photodetectors have been widely studied as one of the core devices in on-chip optical systems. However, bulk materials for photon-to-electron transition at 2 mu m waveband such as HgCdTe or III-V compounds are incompatible with current integrated photonic platforms limited by lattice mismatch. As an alternative, van der Waals (vdW) materials, with exceptional optoelectronic characteristics, such as high mobility and strong light-matter interaction, can be freely integrated with arbitrary photonic platforms through vdW forces. In recent years, highly stable and narrow bandgap tellurium (Te) has been applied to construct mid-infrared detection with high responsivity and large bandwidth. However, the large shot noise of Te photodetectors results from a large dark current, limiting the detection of the weak light signals. Here, we introduce intrinsic n-type molybdenum ditelluride (MoTe2) to construct a PN heterojunction with Te, thereby dark current can be suppressed as a result of the depletion layer at the interface, which is the first time to integrate Te-based heterojunction on commercial silicon photonic platform above communication waveband. As a result, the detectivity of our device reaches 2 x 10(9) cmHz(1/2)W-1. Simultaneously, the obtained waveguide-integrated Te/MoTe2 heterostructure photodetector possesses a responsivity of 94.16 mAW-1 and a bandwidth of 36 MHz, benefiting from both evanescent wave enhancement and narrow channel for collection photoinduced carriers. The demonstrated waveguide-integrated Te/MoTe2 heterostructure photodetector is promising for applications in next-generation high-performance sensing and communication networks at 2 mu m waveband.

Metasurface-assisted amorphous germanium-tin waveguide bolometer for mid-infrared photodetection

Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

A Route toward High-Detectivity and Low-Cost Short-Wave Infrared Photodetection: GeSn/Ge Multiple-Quantum-Well Photodetectors with a Dielectric Nanohole Array Metasurface

All-Dielectric Metasurfaces: Near-Infrared Super-Absorbing All-Dielectric Metasurface Based on Single-Layer Germanium Nanostructures (Laser Photonics Rev. 12(9)/2018)

High Performance Waveguide Integrated Tellurium-based Mid-Infrared Photodetector

Monolithic Mid-IR Methane Gas Sensor with Waveguide-Integrated Detector

Vertical field enhanced nanostructure for quantum well infrared photodetector through Germanium subwavelength arrays

Germanium-On-Silicon Nitride Waveguides for Mid-Infrared Integrated Photonics

Near‐Infrared Super‐Absorbing All‐Dielectric Metasurface Based on Single‐Layer Germanium Nanostructures

Comprehensive Investigation of GeSn Metasurface Photodetector for Short-Wave Infrared Application

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Germanium Photodetectors with 60-Nm Absorption Coverage Extension and ∼2× Quantum Efficiency Enhancement Across L-Band

High-performance Flexible Waveguide-Integrated Photodetectors

Low-Noise Te/MoTe2 Heterojunction Waveguide-Integrated Photodetector

Room-temperature waveguide-integrated photodetector using bolometric effect for mid-infrared spectroscopy applications

InSb all-dielectric metasurface for ultrahigh efficient Si-based mid-infrared detection

A SiGe/Si Nanostructure with Graphene Absorbent for Long Wavelength Infrared Detection

Chalcogenide Metasurfaces Enabling Ultra-Wideband Detectors from Visible to Mid-infrared

Mid-Infrared Detectors and Imagers Integrating All-Group IV Nanowires

Silicon Waveguide-Integrated Platinum Telluride Midinfrared Photodetector with High Responsivity and High Speed

Theoretical investigation of tensile strained GeSn waveguide with Si₃N₄ liner stressor for mid-infrared detector and modulator applications.