Abstract:In this study, the doping of deep‐level element sulfur (S) is synergized with the device architecture incorporating a blocked impurity band (BIB) to fabricate an advanced infrared detector. The S‐doped Si (Si:S) BIB detector exhibited excellent short‐wave infrared detection performance. The multi‐scenario application demonstrations further confirmed its potential for practical use. Silicon (Si)‐based photodetectors are cost‐effective, eco‐friendly, and compatible with on‐chip complementary metal‐oxide‐semiconductor (CMOS) technology. However, expanding their photoresponse into the short‐wavelength‐infrared region beyond 1.1 μm remains challenging because of the intrinsic bandgap of Si. In this study, an ion implantation sulfur‐doped Si‐based infrared photodetector featuring a blocked impurity band (BIB) structure is investigated. The detector achieves an extended sub‐bandgap infrared response up to 2 μm through impurity band transitions, facilitated by the artificial creation of a deep‐level impurity band within the Si bandgap. The device exhibited a competitive photodetection effect with a high responsivity of 107.3 mA W−1 and an external quantum efficiency of 10.2%. Notably, the detector yielded an enhanced response speed with a raising time of 46 μs and a decay time of 135 μs at 1310 nm under room temperature. Finally, the versatile applications of this detector is presented in a multitude of scenarios encompassing material composition identification, multi‐band imaging, and optical communication. The proposed investigation not only proposed a method for Si‐based infrared detectors but also constituted a contribution to the advancement of silicon photonics.

InSb all-dielectric metasurface for ultrahigh efficient Si-based mid-infrared detection

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High-Q All-Dielectric Metasurface: Super and Suppressed Optical Absorption

Near‐Infrared Super‐Absorbing All‐Dielectric Metasurface Based on Single‐Layer Germanium Nanostructures

Thermally Tunable Terahertz Metasurface Absorber Based on All Dielectric Indium Antimonide Resonator Structure

Potential of high Q dual band Mid-Infrared metasurfaces with Quasi-BIC for refractive index sensing

Broadband Mid-Infrared Antireflection Metasurfaces Based on Silicon

CMOS-compatible antimony-doped germanium epilayers for mid-infrared low-loss high-plasma-frequency plasmonics.

Chalcogenide Metasurfaces Enabling Ultra-Wideband Detectors from Visible to Mid-infrared

Design and Simulation of a High-Responsivity Dielectric Metasurface Si-Based InGaAs Photodetector

Broadband and high-efficiency thermal switchable InSb metasurface for terahertz wave anomalous reflection and focusing effect

Multi-band optical resonance of all dielectric metasurfaces toward high-performance ultraviolet sensing

All-Dielectric High-Q Metasurfaces for Infrared Absorption Spectroscopy Applications

InP-based GaAsSb/AlGaAsSb/T2SL barrier-type low-bias tunable dual-band NIR/eSWIR photodetectors

Achieving Infrared Detection by All-Si Plasmonic Hot-Electron Detectors with High Detectivity.

Long-wave infrared to short-wave infrared upconversion through sum-frequency generation in a silicon symmetric metasurface integrated with two-dimensional material

High-index-contrast dielectric metasurface optics for MWIR imaging (Conference Presentation)

Refractive Index Sensing Using All-Dielectric Metasurface with Analogue of Electromagnetically Induced Transparency

Comprehensive Investigation of GeSn Metasurface Photodetector for Short-Wave Infrared Application

On‐Chip Room‐Temperature Operated Short‐Wavelength‐Infrared Si:S Photodetector with a Vertical Junction

Mid-infrared Photodetectors Based on InSb Micro/nanostructures Grown on Low-Cost Mica Substrates