Characterization of Carrier Cooling Bottleneck in Silicon Nanoparticles by Extreme Ultraviolet (XUV) Transient Absorption Spectroscopy

Ilana J. Porter,Angela Lee,Scott K. Cushing,Hung-Tzu Chang,Justin C. Ondry,A. Paul Alivisatos,Stephen R. Leone
DOI: https://doi.org/10.1021/acs.jpcc.1c02101
2021-04-23
The Journal of Physical Chemistry C
Abstract:Silicon nanoparticles have the promise to surpass the theoretical efficiency limit of single-junction silicon photovoltaics by the creation of a "phonon bottleneck," a theorized slowing of the cooling rate of hot optical phonons that in turn reduces the cooling rate of hot carriers in the material. Verifying the presence of a phonon bottleneck in silicon nanoparticles requires simultaneous resolution of electronic and structural changes at short timescales. Here, extreme ultraviolet transient absorption spectroscopy is used to observe the excited-state electronic and lattice dynamics in polycrystalline silicon nanoparticles following 800 nm photoexcitation, which excites carriers with 0.35 ± 0.03 eV excess energy above the Δ<sub>1</sub> conduction band minimum. The nanoparticles have nominal 100 nm diameters with crystalline grain sizes of about ∼16 nm. The extracted carrier–phonon and phonon–phonon relaxation times of the nanoparticles are compared to those for a silicon (100) single-crystal thin film at similar carrier densities (2 × 10<sup>19</sup> cm<sup>–3</sup> for the nanoparticles and 6 × 10<sup>19</sup> cm<sup>–3</sup> for the film). The measured carrier–phonon and phonon–phonon scattering lifetimes for the polycrystalline nanoparticles are 870 ± 40 fs and 17.5 ± 0.3 ps, respectively, versus 195 ± 20 fs and 8.1 ± 0.2 ps, respectively, for the silicon thin film. The reduced scattering rates observed in the nanoparticles are consistent with the phonon bottleneck hypothesis.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.jpcc.1c02101?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.jpcc.1c02101</a>.Description of TEM, XPS, and powder XRD measurements; figures of thin-film characterization, modeled differential Si L<sub>2,3</sub> edge, and growth of trap state feature (<a class="ext-link" href="/doi/suppl/10.1021/acs.jpcc.1c02101/suppl_file/jp1c02101_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
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