Modulation of carrier transport in bipolar response BDD/SnO2 p+-n heterojunction UV photodetectors

Jingjing Xue,Kang Liu,Benjian Liu,Bing Dai,Lei Yang,Jiecai Han,Jiaqi Zhu
DOI: https://doi.org/10.1016/j.apsusc.2023.158246
IF: 6.7
2023-12-01
Applied Surface Science
Abstract:A unique band-to-band tunneling (BTBT) phenomenon has been discovered in heavily boron-doped diamond (BDD)/SnO2 p+-n heterojunctions. This phenomenon can be modulated by varying the bias voltage, changing the thickness of the SnO2 film, and adjusting the power density of incident UV light. The near-broken-gap band alignment of the BDD/SnO2 heterojunction and the existence of electrons in degenerate states in the valence band of BDD are the key to achieving BTBT. Moreover, BDD/SnO2 p+-n heterojunction UV photodetectors (PDs) prepared by radio-frequency magnetron sputtering exhibit a binary photoresponse, large open-circuit voltage (Voc-l), and high photo/dark current ratio (Ip/Id). Those behaviors can be produced through periodic on/off UV light irradiation and by changing tunneling, drift, and thermionic emission currents. Our work, which is the first to achieve a binary photoresponse by modulating BTBT in BDD/SnO2 heterojunctions, demonstrates the feasibility of extending BTBT theory to logical optoelectronic devices.
chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
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