Two-Dimensional GeS/SnSe 2 Tunneling Photodiode with Bidirectional Photoresponse and High Polarization Sensitivity

Shengdi Chen,Jingyi Ma,Nabuqi Bu,Tao Zheng,Jianru Chen,Jianming Huang,Xin Luo,Zhaoqiang Zheng,Nengjie Huo,Jingbo Li,Wei Gao
DOI: https://doi.org/10.1021/acsami.4c02341
IF: 9.5
2024-06-23
ACS Applied Materials & Interfaces
Abstract:A two-dimensional (2D) broken-gap (type-III) p-n heterojunction has a unique charge transport mechanism because of nonoverlapping energy bands. In light of this, type-III band alignment can be used in tunneling field-effect transistors (TFETs) and Esaki diodes with tunable operation and low consumption by highlighting the advantages of tunneling mechanisms. In recent years, 2D tunneling photodiodes have gradually attracted attention for novel optoelectronic performance with a combination of...
materials science, multidisciplinary,nanoscience & nanotechnology
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