Ultra-broadband on-chip power splitters for arbitrary ratios on silicon-on-insulator

Xiang Liu,Zhen Sheng,Yingxuan Zhao,Fuwan Gan

DOI: https://doi.org/10.1364/oe.508058

IF: 3.8

2024-01-06

Optics Express

Abstract:Xiang Liu, Zhen Sheng, Yingxuan Zhao, Fuwan Gan We propose and demonstrate on-chip power splitters based on adiabatic rib waveguide enabling arbitrary splitting ratios on a monolithic ... [Opt. Express 32, 2029-2038 (2024)]

optics

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Ultra-broadband On-Chip Multimode Power Splitter with an Arbitrary Splitting Ratio

Hongnan Xu,Daoxin Dai,Yaocheng Shi

DOI: https://doi.org/10.1364/osac.396024

2020-01-01

OSA Continuum

Abstract:The multimode power splitter is a basic component in mode-division multiplexing systems. In this paper, we propose an ultra-broadband silicon multimode power splitter enabling arbitrary power splitting ratios. The proposed multimode splitter is designed based on a waveguide crossing with an obliquely embedded subwavelength grating (SWG) transflector. The incident multiple guided-modes can be split into two beams with low excess losses and low crosstalk by the SWG transflector where the thin-film interference effect happens. As an example, a silicon multimode power splitter is designed to work with the three lowest-order modes of TE polarization. Any desired splitting ratio ranging from 0% to 100% can be achieved by engineering the structural parameters of the SWG. Moreover, the desired splitting ratio can be very uniform over an extremely broad bandwidth of ≥ 415 nm, covering O-, E-, S-, C-, L- and U-bands. The intermodal crosstalk is < −20 dB for all the input modes in theory. To the best of our knowledge, the proposed structure is the first multimode power splitter enabling any desired power splitting ratios in all the optical communication bands.
Mid-Infrared, Ultra-Broadband, Low-Loss, Compact Arbitrary Power Splitter Based on Adiabatic Mode Evolution

Jia Xu Brian Sia,Wanjun Wang,Xin Guo,Jin Zhou,Zecen Zhang,Mohamed Said Rouifed,Xiang Li,Zhong Liang Qiao,Chong Yang Liu,Callum Littlejohns,Graham T. Reed,Hong Wang

DOI: https://doi.org/10.1109/jphot.2019.2907788

IF: 2.4

2019-01-01

IEEE Photonics Journal

Abstract:We designed and demonstrated TE-mode arbitrary power splitters based on adiabatic mode evolution. The power splitters are designed with a footprint of smaller than 12 × 2.9 μm2, fabricated on a 400-nm silicon-on-insulator platform, requiring only a single etch step. The optimization process and the conditions for arbitrary-power splitting are performed using three-dimensional-FDTD simulations. We prove this concept through the fabrication of asymmetrical adiabatic evolution-based power splitters with splitting ratios of 50:50, 60:40, and 70:30. The fabricated devices are shown to agree closely with simulation results. Broadband operation with low insertion loss of 0.11–0.6 dB is demonstrated across the 3.66–3.89 μm wavelength range (230 nm). This component has applications in a multitude of areas such as spectroscopic optical sensing and optical phased arrays photonic integrated circuits etc.
Ultra-broadband, Compact, CMOS Compatible Arbitrary Ratio Power Splitter with Very Low Excess Loss

Han Liao,Haiyang Huang,Yingxuan Zhao,Xiaojuan She,Rui Huang,Yang Li,Lue Tao,Zijian Zhu,Xiang Liu,Zhen Sheng,Fuwan Gan

DOI: https://doi.org/10.1117/12.2617210

2022-01-01

Abstract:We designed an ultra-broadband, compact, CMOS compatible, arbitrary ratio power splitter based on 220-nm-thick silicon-on-insulator (SOI) platform. The geometry of power splitter was digitalized into 20 parameters. For each different power splitting ratio (PSR), these 20 parameters were optimized to achieve low excess loss, using variational finite difference time domain (varFDTD) simulation and adjoint shape optimization. After many iterations of optimization, the structure was finally determined. The simulated excess loss was optimized to a low value, which was below 0.13dB. The PSR variation was limited to less than 0.459dB over 500 nm, across the O band and C band, showing that the PSR of the device was wavelength independent. An order of magnitude smaller than other kind of typical power splitters, the footprint of the proposed device is only about 1.2 μm × 2 μm, ensuring the compactness of the photonic integrated circuits (PICs). Simultaneously, it is easy to fabrication since the boundaries are smooth with a fairly large feature size.
Broadband and High Uniformity Y Junction Optical Beam Splitter with Multimode Tapered Branch

Chonglei Sun,Jia Zhao,Zuojia Wang,Liuge Du,Weiping Huang

DOI: https://doi.org/10.1016/j.ijleo.2018.12.013

IF: 3.1

2018-01-01

Optik

Abstract:A high uniformity and broad bandwidth Y junction optical beam splitter is proposed and analyzed in this paper based on silicon-on-insulator platform. By replacing the uniform branch with the multimode tapered branch, the bandwidth and the power uniformity of two output ports are unproved prominently. Furthermore, the sensitivity to fabrication accuracy is reduced by widening the splitting angle. The simulation and the experimental results confirm that the bandwidth is larger than 100 nm, the power uniformity of two output ports is enhanced 4 dB, whereas the insertion loss is less than 0.6 dB and the return loss is larger than 26 dB, respectively.
Compact, Broadband, and Low-Loss Silicon Photonic Arbitrary Ratio Power Splitter Using Adiabatic Taper.

Junbo Zhu,Qiu Chao,Haiyang Huang,Yingxuan Zhao,Yang Li,Lue Tao,Xiaojuan She,Han Liao,Rui Huang,Zijian Zhu,Xiang Liu,Zhen Sheng,Fuwan Gan

DOI: https://doi.org/10.1364/ao.413949

IF: 1.9

2020-01-01

Applied Optics

Abstract:The arbitrary ratio power splitter is widely used in photonic integrated circuits (PICs), for signal monitoring, power equalization, signal feedback, and so on. Here we designed a fabrication-tolerant, compact, broadband, and low-loss arbitrary ratio power splitter. The proposed arbitrary ratio power splitter was realized with an adiabatically tapered silicon rib waveguide with 70 nm shallow etches and an Si3N4 waveguide. The fabrication analysis confirmed that both of them are robust to fabrication errors. 3D finite-difference time-domain simulations show a very low excess loss (less than 0.02 dB for Si3N4 waveguide and 0.05 dB for Si rib waveguide), and a broadband operating wavelength range (100 nm). Good fabrication tolerance and standard critical dimensions make the arbitrary ratio power splitter compatible with the standard fabrication process of commercial silicon photonic foundries.
Ultra-compact dual-mode silicon power splitter using sub wavelength gratings couplers

Qi Zhang,Mengyuan Ye,Lijun Zhang,Zhepei Chen

DOI: https://doi.org/10.1117/12.2603917

2021-01-01

Abstract:We propose and demonstrate a 3dB optical power splitter based on silicon on insulator (SOT) platform. Simulations results show that 50:50 split ratio for TE0 and TE1 modes can be achieved simultaneously by mode dispersion engineering. A compact size of 28.1 mu m can be achieved by introducing subwavelength gratings (SWG) structure. The proposed device can be utilized for multi-mode signal processing.
Compact, Ultrabroadband and Temperature-Insensitive Arbitrary Ratio Power Splitter Based on Adiabatic Rib Waveguides

Xiang Liu,Yingxuan Zhao,Haiyang Huang,Yang Li,Xiaojuan She,Han Liao,Junbo Zhu,Zijian Zhu,Rui Huang,Hongbao Liu,Zhen Sheng,Fuwan Gan

DOI: https://doi.org/10.1364/ao.479304

IF: 1.9

2023-01-01

Applied Optics

Abstract:We propose a compact, ultrabroadband and temperature-insensitive adiabatic directional coupler based on rib silicon waveguide-enabling arbitrary splitting ratios. Simulation results show that the device can achieve arbitrary splitting ratios from 1400 to 1600 nm, equal to 50%:50%, 60%:40%, 70%:30%, 80%:20%, and 90%:10% for the fundamental transverse electric mode. The designed device has an excess loss of less than 0.19 dB on the operational waveband. Furthermore, the proposed device shows a great robustness to fabrication imperfection, with a waveguide width deviation of 50 nm and ambient temperature change from 0°C to 200°C. These properties make the design a potential candidate for ultrahigh-density photonic integration chips.
Compact, Broadband, And Polarization-Insensitive 3 Db Power Splitter On Silicon

Xiaohui Jiang,Daoxin Dai

DOI: https://doi.org/10.1109/acp.2018.8595913

2018-01-01

Abstract:An ultra-compact, ultra-broadband and polarization-insensitive 2x2 3 dB power splitter on silicon is proposed and demonstrated with a coupling region as short as 4.6 mu m. The fabricated 3dB power splitter works very well for both TE and TM polarizations in a broad band from 1520 nm to 1610 nm.
Broadband Arbitrary Ratio Power Splitters Based on Directional Couplers with Subwavelength Structure

Shi Zhao,Yaocheng Shi

DOI: https://doi.org/10.1109/lpt.2021.3070464

IF: 2.6

2021-01-01

IEEE Photonics Technology Letters

Abstract:We propose an 1×2 power splitter enabling arbitrary splitting ratios based on a directional coupler with subwavelength structure. The simulation results show that arbitrary power splitting can be achieved over a broad bandwidth ~120 nm.
Inversely Designed 1 × 4 Power Splitter with Arbitrary Ratios at 2-Μm Spectral Band

Hucheng Xie,Yingjie Liu,Wenzhao Sun,Yujie Wang,Ke Xu,Jiangbing Du,Zuyuan He,Qinghai Song

DOI: https://doi.org/10.1109/jphot.2018.2863122

IF: 2.4

2018-01-01

IEEE Photonics Journal

Abstract:We demonstrate integrated 1 × 4 power splitters at 2-μm spectral range with arbitrary power-splitting ratios. The devices are based on digital meta-structures that are designed by algorithm. Four devices with split ratios of 1:1:1:1, 2:2:1:1, 2:2:2:1, and 4:3:2:1 are inversely designed to conceptually prove the capability of arbitrary split ratios. Up to four design objectives including both efficiency and power ratios between the four outputs of each device have been jointly optimized. The total transmission efficiencies of all the algorithm-optimized splitters are above 80%, which is predicted by simulations. The power ratios are well consistent with the design targets as well. Then, the devices are fabricated on silicon-on-insulator platform with the device footprint of only 3.6 μm × 3.6 μm. The fabricated splitters are characterized at wavelength range from 1945 to 1975 nm. The total transmission efficiencies of all the splitters are measured to be higher than 70%, and the power ratios agree with the simulation results.
Ultra-broadband 3 Db Power Splitter from 1.55 to 2 Μm Wave Band

Zelu Wang,Yingjie Liu,Zi Wang,Yilin Liu,Jiangbing Du,Qinghai Song,Ke Xu

DOI: https://doi.org/10.1364/ol.430827

IF: 3.6

2021-01-01

Optics Letters

Abstract:Extending the optical communication wavelengths to 2 µm can significantly increase data capacity. Silicon photonics, which is a proven device integration technology, has made rapid progress at 2 µm recently. As a fundamental functional element in the photonic design kit, the 3 dB power splitter has been extensively studied in both the 1.55 µm and 2 µm regime. While the device is highly desirable to operate over both wave bands, the large waveguide dispersion in silicon makes it challenging. In this work, we demonstrate an ultra-broadband power splitter on silicon, which has a 0.2 dB bandwidth exceeding 520 nm from 1500 to 2020 nm according to simulations. The beam splitter is realized by a triple tapered Y-junction, and its operational bandwidth is greatly increased by subwavelength grating structure. The device has an ultra-compact footprint of only 3 µ m × 2 µ m . Due to the limitations on the setup and coupling technique, we measure the device bandwidth in 1.55 µm and 2 µm wave bands. The device insertion loss is measured to be below 0.4 dB from 1500 to 1620 nm and from 1960 to 2020 nm, respectively. According to these results, the proposed device is believed to be capable of operating over a broadband from 1.55 µm and 2 µm wavelengths.
Inversely Designed 1 x 4 Power Splitter With Arbitrary Ratios at 2-mu m Spectral Band

Xie Hucheng,Liu Yingjie,Sun Wenzhao,Wang Yujie,Xu Ke,Du Jiangbing,He Zuyuan,Song Qinghai

DOI: https://doi.org/10.1109/JPHOT.2018.2863122

IF: 2.4

2018-01-01

IEEE Photonics Journal

Abstract:We demonstrate integrated 1 x 4 power splitters at 2-mu m spectral range with arbitrary power-splitting ratios. The devices are based on digital meta-structures that are designed by algorithm. Four devices with split ratios of 1:1:1:1, 2:2:1:1, 2:2:2:1, and 4:3:2:1 are inversely designed to conceptually prove the capability of arbitrary split ratios. Up to four design objectives including both efficiency and power ratios between the four outputs of each device have been jointly optimized. The total transmission efficiencies of all the algorithm-optimized splitters are above 80%, which is predicted by simulations. The power ratios are well consistent with the design targets as well. Then, the devices are fabricated on silicon-on-insulator platform with the device footprint of only 3.6 mu m x 3.6 mu m. The fabricated splitters are characterized at wavelength range from 1945 to 1975 nm. The total transmission efficiencies of all the splitters are measured to be higher than 70%, and the power ratios agree with the simulation results.
On-chip Y-junction with adaptive power splitting toward ultrabroad bandwidth

Wu You,Guo Xiaoyuan,Zhang Zimeng,Xiao Shumin,Song Qinghai,Xu Ke

DOI: https://doi.org/10.1364/OL.497530

IF: 3.6

2023-01-01

Optics Letters

Abstract:Growing research interests have been directed to the emerging optical communication band at 2-& mu;m wavelengths. The silicon photonic components are highly desired to operate over a broad bandwidth covering both C-band and the emerging 2-& mu;m wave band. However, the dispersions of the silicon waveguides eventually limit the optical bandwidth of the silicon photonic devices. Here, we introduce a topology-optimized Y-junction with a shallow-etched trench and its utility to reverse the detrimental dispersion effect. The shallow trench enables the Y-junction to have an adaptive splitting capability over a broad spectral range. The 0.2-dB bandwidth of the power splitter exceeds 800 nm from 1400 nm to 2200 nm. The device has a compact footprint of 3 & mu;m x 1.64 & mu;m. The device is characterized at the C-band and 2-& mu;m band with a measured excess loss below 0.4 dB for a proof-of-concept demonstration.& COPY; 2023 Optica Publishing Group
On-chip Y-junction with Adaptive Power Splitting Toward Ultrabroad Bandwidth.

You Wu,Xiaoyuan Guo,Zimeng Zhang,Shumin Xiao,Qinghai Song,Ke Xu

DOI: https://doi.org/10.1364/ol.497530

IF: 3.6

2023-01-01

Optics Letters

Abstract:Growing research interests have been directed to the emerging optical communication band at 2-µm wavelengths. The silicon photonic components are highly desired to operate over a broad bandwidth covering both C-band and the emerging 2-µm wave band. However, the dispersions of the silicon waveguides eventually limit the optical bandwidth of the silicon photonic devices. Here, we introduce a topology-optimized Y-junction with a shallow-etched trench and its utility to reverse the detrimental dispersion effect. The shallow trench enables the Y-junction to have an adaptive splitting capability over a broad spectral range. The 0.2-dB bandwidth of the power splitter exceeds 800 nm from 1400 nm to 2200 nm. The device has a compact footprint of 3 µm × 1.64 µm. The device is characterized at the C-band and 2-µm band with a measured excess loss below 0.4 dB for a proof-of-concept demonstration.
On-chip Y-junction with adaptive power splitting towards ultrabroad bandwidth

You Wu,Xiaoyuan Guo,Zimeng Zhang,Shumin Xiao,Qinghai Song,Ke Xu

DOI: https://doi.org/10.1364/ol.497530

IF: 3.6

2023-07-28

Optics Letters

Abstract:Growing research interests have been directed to the emerging optical communication band at 2-µm wavelengths. The silicon photonic components are highly desired to operate over a broad bandwidth covering both C-band and the emerging 2-µm wave band. However, the dispersions of the silicon waveguides eventually limit the optical bandwidth of the silicon photonic devices. Here, we introduce a topology-optimized Y-junction with a shallow-etched trench and its utility to reverse the detrimental dispersion effect. The shallow trench enables the Y-junction to have an adaptive splitting capability over a broad spectral range. The 0.2-dB bandwidth of the power splitter exceeds 800 nm from 1400 nm to 2200 nm. The device has a compact footprint of 3 µm × 1.64 µm. The device is characterized at the C-band and 2-µm band with a measured excess loss below 0.4 dB for a proof-of-concept demonstration.

optics
Ultra-broadband Power Splitter using subwavelength grating

Yu Ting,Liu Yingjie,Xu Ke

2020-01-01

Abstract:A silicon-based ultra-broadband power splitter is proposed using a subwavelength grating (SWG) structure. The bandwidth of loss is less than 0.2dB can over the 1.55-mu m waveband and 2-mu m waveband. the total bandwidth is over 500nm. (C) 2020 The Author(s)
Integrated Photonic Power Divider with Arbitrary Power Ratios

Ke Xu,Lu Liu,Xiang Wen,Wenzhao Sun,Nan Zhang,Ningbo Yi,Shang Sun,Shumin Xiao,Qinghai Song

DOI: https://doi.org/10.1364/ol.42.000855

IF: 3.6

2017-01-01

Optics Letters

Abstract:Integrated optical power splitters are one of the fundamental building blocks in photonic integrated circuits. Conventional multimode interferometer-based power splitters are widely used as they have reasonable footprints and are easy to fabricate. However, it is challenging to realize arbitrary split ratios, especially for multi-outputs. In this Letter, an ultra-compact power splitter with a QR code-like nanostructure is designed by a nonlinear fast search method. The highly functional structure is composed of a number of freely designed square pixels with the size of 120×120 nm which could be either dielectric or air. The light waves are scattered by a number of etched squares with optimized locations, and the scattered waves superimpose at the outputs with the desired power ratio. We demonstrate 1×2 splitters with 1:1, 1:2, and 1:3 split ratios, and a 1×3 splitter with the ratio of 1:2:1. The footprint for all the devices is only 3.6×3.6 μm. Well-controlled split ratios are measured for all the cases. The measured transmission efficiencies of all the splitters are close to 80% over 30 nm wavelength range.
Compacted Splitter Based On The Interlaced Metallic Particle Arrays

Xian Chen,Hui Yu,Fan Wang,Qiang Zhou,Jianyi Yang,Minghua Wang,Xiaoqing Jiang

DOI: https://doi.org/10.1109/LEOSWT.2009.4771651

2009-01-01

Abstract:We propose ultra-short 1x2 and 1x3 power splitters with nanometer sized. The power splitters are designed by utilizing surface plasmon polaritons for the localization of electromagnetic energy in sub-wavelength interlaced metallic particle arrays.
Ultra-broadband 3-dB power splitter using thin-film lithium niobite from 1.2 to 2 µm waveband

Qiyuan Yi,An Pan,Jinsong Xia,Cheng Zeng,Linfang Shen

DOI: https://doi.org/10.1364/ol.498536

IF: 3.6

2023-01-01

Optics Letters

Abstract:The 3 dB power splitters are fundamental building blocks for integrated photonic devices. As data capacity requirements continue to rise, there is a growing interest in integrated devices that can accommodate multiple spectral bands, including the conventional O-, C-, and L-bands, and the emerging 2 µm band. Here we propose and experimentally demonstrate a 3 dB power splitter based on adiabatic mode evolution using a thin-film lithium niobate, with ultra-broadband operation bandwidth from 1200 to 2100 nm. The fabricated power splitter exhibits low insertion losses of 0.2, 0.16, and 0.53 dB for wavelengths at 1310, 1550, and 2000 nm, respectively. The measured 1 dB bandwidth covers 1260-1360, 1480-1640, and 1930-2030 nm, which we believe that the proposed device is capable of operating in both O-, C-, L-, and 2 µm bands.

Ultra-broadband on-chip power splitters for arbitrary ratios on silicon-on-insulator

Ultra-broadband On-Chip Multimode Power Splitter with an Arbitrary Splitting Ratio

Mid-Infrared, Ultra-Broadband, Low-Loss, Compact Arbitrary Power Splitter Based on Adiabatic Mode Evolution

Ultra-broadband, Compact, CMOS Compatible Arbitrary Ratio Power Splitter with Very Low Excess Loss

Broadband and High Uniformity Y Junction Optical Beam Splitter with Multimode Tapered Branch

Compact, Broadband, and Low-Loss Silicon Photonic Arbitrary Ratio Power Splitter Using Adiabatic Taper.

Ultra-compact dual-mode silicon power splitter using sub wavelength gratings couplers

Compact, Ultrabroadband and Temperature-Insensitive Arbitrary Ratio Power Splitter Based on Adiabatic Rib Waveguides

Compact, Broadband, And Polarization-Insensitive 3 Db Power Splitter On Silicon

Broadband Arbitrary Ratio Power Splitters Based on Directional Couplers with Subwavelength Structure

Inversely Designed 1 × 4 Power Splitter with Arbitrary Ratios at 2-Μm Spectral Band

Ultra-broadband 3 Db Power Splitter from 1.55 to 2 Μm Wave Band

Inversely Designed 1 x 4 Power Splitter With Arbitrary Ratios at 2-mu m Spectral Band

On-chip Y-junction with adaptive power splitting toward ultrabroad bandwidth

On-chip Y-junction with Adaptive Power Splitting Toward Ultrabroad Bandwidth.

On-chip Y-junction with adaptive power splitting towards ultrabroad bandwidth

Ultra-broadband Power Splitter using subwavelength grating

Integrated Photonic Power Divider with Arbitrary Power Ratios

Compacted Splitter Based On The Interlaced Metallic Particle Arrays

Ultra-broadband 3-dB power splitter using thin-film lithium niobite from 1.2 to 2 µm waveband