First-principles study of strain effect on the thermoelectric properties of LaP and LaAs

Chia-Min Lin,Wei-Chih Chen,Cheng-Chien Chen

DOI: https://doi.org/10.1039/d1cp02871e

IF: 3.3

2021-01-01

Physical Chemistry Chemical Physics

Abstract:The thermoelectric figure of merit ZT value of quantum materials lanthanum monopnictides can be boosted to ZT > 2 by isotropic strain at high temperature.

chemistry, physical,physics, atomic, molecular & chemical

What problem does this paper attempt to address?

First-Principles Study of Strain Effect on Thermoelectric Properties of LaP and LaAs

Chia-Min Lin,Wei-Chih Chen,Cheng-Chien Chen

DOI: https://doi.org/10.1039/D1CP02871E

2020-08-15

Abstract:Rare-earth monopnictides have attracted much attention due to their unusual electronic and topological properties for potential device applications. Here, we study rock-salt structured lanthanum monopnictides LaX (X = P, As) by density functional theory (DFT) simulations. We show systematically that a meta-GGA functional combined with scissor correction can efficiently and accurately compute electronic structures on a fine DFT $k$-grid, which is necessary for converging thermoelectric calculations. We also show that strain engineering can effectively improve thermoelectric performance. Under the optimal condition of 2% tensile strain and carrier concentration $n=3\times10^{20}~\textrm{cm}^{-3}$, LaP at temperature 1200 K can achieve a figure of merit $ZT$ value $>2$, which is enhanced by 90% compared to the unstrained value. With carrier doping and strain engineering, lanthanum monopnictides thereby could be promising high-temperature thermoelectric materials.

Materials Science
Thermoelectric Properties of Topological Insulator Lanthanum Phosphide Via First-Principles Study

Yu Zhou,Wang-Li Tao,Zhao-Yi Zeng,Xiang-Rong Chen,Qi-Feng Chen

DOI: https://doi.org/10.1063/1.5043170

IF: 2.877

2019-01-01

Journal of Applied Physics

Abstract:We systematically investigate the thermoelectric properties of lanthanum phosphide (LaP) using first-principles calculations together with the Boltzmann transport theory. The dynamic stability of LaP is confirmed based on phonon dispersion. The different atomic masses of La and P atoms lead to an acoustic-optical bandgap that prohibits scattering between acoustic and optical phonon modes. The lattice thermal conductivity κl is 3.19 W/mK at room temperature, which is less than that of LaAs because of the smaller group velocities and the larger Grüneisen parameter. The calculated phonon-mode contribution to κl, scattering rate, and mean free path may provide significant guidance to further theoretical and experimental research. The power factor reaches 0.012 W m−1 K−2 at a carrier concentration of 1.05×1020cm−3, which is comparable to the power factor of the typical thermoelectric material Bi2Te3. This reasonable power factor and thermal conductivity suggest that LaP is a promising thermoelectric material. The dependence of the figure of merit ZT on carrier concentration n and temperature T indicates that a high ZT can be obtained by increasing the temperature and tuning the carrier concentration.
Unravelling the Thermoelectric Properties and Suppression of Bipolar Effect under Strain Engineering for the Asymmetric Janus SnSSe and PbSSe Monolayers

Shulin Bai,Shuwei Tang,Mengxiu Wu,Dongming Luo,Jingyi Zhang,Da Wan,Shaobin Yang

DOI: https://doi.org/10.1016/j.apsusc.2022.153962

IF: 6.7

2022-01-01

Applied Surface Science

Abstract:Inspired by the groundbreaking discovery of the two-dimensional (2D) MoSSe materials, the electronic, thermal, and thermoelectric properties of asymmetric Janus SnSSe and PbSSe monolayers are theoretically evaluated by the first-principles calculations. The SnSSe and PbSSe monolayers are indirect semiconductors with bandgaps of -1.39 and -0.44 eV by the HSE06 functional in combination with spin-orbital coupling (SOC) calculation. The further analysis of phonon dispersion curves and mechanical stabilities indicate that the SnSSe and PbSSe monolayers are thermodynamically and mechanically stable in the absence of negative frequency and elastic constant. The optimal dimensionless figure-of-merit (ZT) values of the SnSSe and PbSSe monolayers are -1.20 and -2.99 at 900 K, respectively. Furthermore, the strong bipolar effect is observed in the PbSSe monolayer at high temperature, which is detrimental for thermoelectric applications. Nevertheless, the strain engineering could modulate the bandgap of the PbSSe monolayer, which is benifical to improving the thermoelectric performance of the PbSSe monolayer (ZT -3.77 @ 900 K). Our present work would not only provide a fundamental understanding of electrical and thermal transport properties of asymmetric Janus SnSSe and PbSSe monolayers but also shed some light on the theoretical design of low-dimensional nanomaterials under strain engineering in thermoelectric applications.
Improving Thermoelectric Performance of Asymmetrical Janus 1T-Snsse Monolayer by the Synergistic Effect of Band Convergence and Crystal Lattice Softening under Strain Engineering

Shuwei Tang,Shulin Bai,Mengxiu Wu,Dongming Luo,Jingyi Zhang,Dongyang Wang,Shaobin Yang,Li-Dong Zhao

DOI: https://doi.org/10.1016/j.mtphys.2022.100923

IF: 11.021

2022-01-01

Materials Today Physics

Abstract:Recently, the 1T-SnSSe monolayer has attracted increasing attention in the thermoelectric community on ac-count of its low-cost and environmental friendliness. In this paper, the thermoelectric properties of asymmetrical 1T-SnSSe monolayer under strain engineering are comprehensively evaluated using density functional theory (DFT) and semiclassical Boltzmann transport theory calculations. The analysis of mechanical stability, phonon spectrum, and ab initio molecular dynamics (AIMD) simulations demonstrates that the strained 1T-SnSSe monolayers are mechanically, dynamically, and thermally stable. The improvement of the Seebeck coefficient for the strained 1T-SnSSe monolayers mainly originates from the band convergence. Meanwhile, the thermal transport properties of the strained 1T-SnSSe monolayers are suppressed by crystal lattice softening. As a result, the optimal ZT of-1.75 and-1.56 @ 900 K for the p-type and n-type 1T-SnSSe monolayers are obtained at the biaxial tensile strain of 6% with the optimal carrier concentrations of-1 x 1014 and-2 x 1013 cm-2. Our present work not only provides a fundamental understanding of electronic and thermal transport properties of the strained 1T-SnSSe monolayers, but also sheds some light on the theoretical exploration of low-dimensional nanomaterials for thermoelectric applications.
First-principles calculations and high thermoelectric performance of La–Nb doped SrTiO3 ceramics

Yan Li,Qing-Yu Hou,Xiao-Huan Wang,Hui-Jun Kang,Xinba Yaer,Jian-Bo Li,Tong-Min Wang,Lei Miao,Jun Wang

DOI: https://doi.org/10.1039/c8ta10079a

IF: 11.9

2019-01-01

Journal of Materials Chemistry A

Abstract:SrTiO3 is a promising thermoelectric material for high temperature application of waste heat electrical generation. However, its dimensionless figure of merit (zT) is restricted by its high thermal conductivity, which results from the simple perovskite structure and light elements of SrTiO3. In this paper, we successfully obtained complex structured bulk SrTiO3 with a TiO2 second phase and a porous structure by tuning the doping ratios of the heavy elements La and Nb, resulting in a low thermal conductivity of 1.97 W m(-1) K-1 and a high zT value of 0.31 at 1050 K. The first-principles calculation was utilized to calculate the formation energy, effective mass and electron band structure of La-Nb co-doped SrTiO3, and the effects of the parameters on the thermoelectric properties were also discussed. We found that the doping ratio of La to Nb changed the electron band structure and controlled the formation of the TiO2 second phase, which affected the electrical transport and thermal transport properties, respectively. The formation of the in situ TiO2 second phase was related to the high formation energy derived from the high Nb concentration. These results offer an approach for the design of other thermoelectric materials with low thermal conductivity and a high power factor.
Enhancing thermoelectric performance of 2D Janus ISbTe by strain engineering: A first principle study

Anuja Kumari,Abhinav Nag,Santanu K. Maiti,Jagdish Kumar

2024-03-04

Abstract:Recent developments in the 2D materials laid emphasis on finding the materials with robust properties for variety of applications including the energy harvesting. The recent discovery of Janus monolayers with broken symmetry has opened up new options for engineering the properties of 2D layered materials. Present study focuses on enhancing thermoelectric properties of 2H-ISbTe 2D Janus monolayer. All the calculations have been performed using fully relaxed unit cell and employing the pseudo potential based quantum espresso code. Calculated structural parameters are in good agreement with previous literature reports. The lattice dynamics calculations predicts this monolayer can withstand a strain of up to 4% beyond which imaginary frequencies appear in the phonon dispersion curves. Computed electronic structure reveals that the monolayer is an indirect wide bandgap material and the bandgap decreases with tensile strain. Furthermore, the computed thermoelectric properties show that the studied monolayer has high Seebeck coefficient of ~ 300 {\mu}V/K and low thermal conductivity which yields reasonably high ZT of ~ 1.31 for a strain of 2% at 300 K with p-type doping. Therefore, our study signifies the fact that tensile strain and p-type doping of 2D Janus monolayer ISbTe can enhance ZT from 0.87 to 1.31 at room temperature which makes it a promising candidate for thermoelectric applications.

Materials Science,Mesoscale and Nanoscale Physics
Strain‐induced effects on thermoelectric performance of layered LaCuOSe

Shan Feng,Xiaotao Zu,Liang Qiao,Haiyan Xiao

DOI: https://doi.org/10.1111/jace.19603

IF: 4.186

2023-12-09

Journal of the American Ceramic Society

Abstract:In this study, the strain‐induced effects on thermal and electrical transport properties of LaCuOSe are studied by combining first‐principles calculations with semi‐classical Boltzmann transport theory. The results show that external strain affects the crystal and electronic structures of LaCuOSe significantly. It is interesting to find that the electrical conductivity of n‐type LaCuOSe is improved by the tensile strain. In addition, the tensile strain also has positive effects on the Seebeck coefficient of p‐type doped LaCuOSe. Consequently, the power factor of p‐type doped LaCuOSe is enhanced by 18.2% under 10% tensile strain at 800 K. However, due to the obviously affected mechanical properties of LaCuOSe under external strain, the decreased Grüneisen constant and reduced Debye temperatures are resulted, and the lattice thermal conductivity of LaCuOSe at 300 K increases from 2.91 to 5.95 Wm/K with the tensile strain increasing from 0% to 10%. The sharply increased thermal conductivity finally results in the optimal ZT value of 0.076 and 0.417 for ideal p‐ and n‐type LaCuOSe at 800 K being reduced to 0.048 and 0.286 under 10% tensile strain, respectively. These results suggest that the thermoelectrical properties of LaCuOSe need to be further improved for its application under stress.

materials science, ceramics
Effect of crystal size distribution on thermoelectric performance for Lanthanum-doped strontium titanate bulk material

boyu zhang,jun wang,xinba yaer,zhenzhen huo,yin wu,yan li,lei miao,chengyan liu,tao zou,wen ma

DOI: https://doi.org/10.1142/S1793604715500708

IF: 1.4901

2015-01-01

Functional Materials Letters

Abstract:Effect of crystal size distribution on thermoelectric performance of Lanthanum-doped strontium titanate (La-SrTiO3) ceramics are investigated in this study. Thermoelectric performance measurement, coupled with microstructure studies, shows that the electrical conductivity strongly depends on the crystal size, potential barrier on the grain boundary and porosity. Meantime, because the average potential barriers height are increased along with the reduction of crystal size, the Seebeck coefficients are increased by energy filtering effect at the large number of grain boundaries. As a result, by controlling of crystal size distribution, ZT value of La-SrTiO3 is improved.
The Strain-Induced Excellent Thermoelectric Performance of PbTe

Donglin Guo,Chunhong Li,Kejian Li,Bin Shao,Dengming Chen,Yilong Ma,Jianchun Sun,Xianlong Cao,Wen Zeng,Rui Yang

DOI: https://doi.org/10.1016/j.physe.2021.114685

IF: 3.369

2021-01-01

Physica E Low-dimensional Systems and Nanostructures

Abstract:Through Density functional theory and Boltzmann transport theory, the ideal strength, electronic structure, elastic constants and thermoelectric performance of cubic phase PbTe are investigated. When the compressive strain is applied, both band gap and Seebeck coefficient decrease, while the electrical conductivity, power factor, thermal conductivity and ZT increase. According to the ZT of PbTe, the thermoelectric performance of p type is superior to that of n type. The optimal ZT value of p type could reach 3.88 at 0.5% strain, while the optimal ZT value of n type could reach 3.05 at 2.0% strain. Compared to the thermoelectric performance without strain, the thermoelectric performance under strain could be significantly improved, indicating that the strain engineering could be an effective strategy to improve the thermoelectric performance of PbTe.
The use of strain to tailor electronic thermoelectric transport properties: A first principles study of 2H-phase CuAlO2

Evan Witkoske,David Guzman,Yining Feng,Alejandro Strachan,Mark Lundstrom,Na Lu

DOI: https://doi.org/10.1063/1.5058275

2018-12-13

Abstract:Using first principles calculations, the use of strain to adjust electronic transport and the resultant thermoelectric (TE) properties is discussed using 2H phase CuAlO2 as a test case. Transparent oxide materials, such as CuAlO2, a p-type transparent conducting oxide (TCO), have recently been studied for high temperature thermoelectric power generators and coolers for waste heat. Given TCO materials with relative ease of fabrication, low cost of materials, and non-toxicity, the ability to tailor them to specific temperature ranges, power needs, and size requirements, through the use of strain opens an interesting avenue. We find that strain can have a significant effect on these properties, in some cases detrimental and in others beneficial, including the potential for n-type power factors larger than the highest p-type case. The physical reasons for this behavior are explained in the terms of the thermoelectric transport distribution and the Landauer distribution of modes.

Materials Science
Strain Induced Enhancement of Thermoelectric Properties of Monolayer WS2 through Valley Degeneracy

Jayanta Bera,Satyajit Sahu

DOI: https://doi.org/10.48550/arXiv.1905.10405

2019-05-24

Computational Physics

Abstract:Two-dimensional transition metal dichalcogenides show great potential as promising thermoelectric materials due to their lower dimensionality, the unique density of states and quantum confinement of carriers. The effect of mechanical strain on the thermoelectric performances of monolayer WS 2 has been investigated using density functional theory associated with semiclassical Boltzmann transport theory. The variation of Seebeck coefficient and band gap with applied strain has followed the same type of trend. For n-type material the relaxation time scaled power factor(S 2 {\sigma}/{\tau}) increases by the application of compressive strain whereas for p- type material it increases with the application of tensile strain. A 77% increase in the power factor has been observed for the n-type material by the application of uniaxial compressive strain. A decrease in lattice thermal conductivity with the increase in temperature causes an almost 40% increase in ZT product under applied uniaxial compressive strain. From the study, it is observed that uniaxial compressive strain is more effective among all types of strain to enhance the thermoelectric performance of monolayer WS 2 . Such strain induced enhancement of thermoelectric properties in monolayer WS 2 could open a new window for the fabrication of high-quality thermoelectric devices.
Strain Tunable Thermoelectric Material: Janus ZrSSe Monolayer

Si-Zhao Huang,Cheng-Ge Fang,Qing-Yi Feng,Bi-Yi Wang,Hong-Dong Yang,Bo Li,Xia Xiang,Xiao-Tao Zu,Hong-Xiang Deng

DOI: https://doi.org/10.1021/acs.langmuir.2c03185

IF: 3.9

2023-02-08

Langmuir

Abstract:Thermoelectric (TE) performance of the Janus ZrSSe monolayer under biaxial strain is systematically explored by the first-principles approach and Boltzmann transport theory. Our results show that the Janus ZrSSe monolayer has excellent chemical, dynamical, thermal, and mechanical stabilities, which provide a reliable platform for strain tuning. The electronic structure and TE transport parameters of the Janus ZrSSe monolayer can be obviously tuned by biaxial strain. Under 2% tensile strain, the optimal power factor PF of the n-type-doped Janus ZrSSe monolayer reaches 46.36 m W m<sup>-1</sup> K<sup>-2</sup> at 300 K. This value is higher than that of the most classical TE materials. Under 6% tensile strain, the maximum ZT values for the p-type- and n-type-doped Janus ZrSSe monolayers are 4.41 and 4.88, respectively, which are about 3.83 and 1.49 times the results of no strain, respectively. Such high TE performance can be attributed to high band degeneracy and short phonon relaxation time under strain, causing simultaneous increase of the Seebeck coefficient and suppression of the phonon thermal transport. Present work demonstrates that the Janus ZrSSe monolayer is a promising candidate as a strain-tunable TE material and stimulates further experimental synthesis.

chemistry, multidisciplinary, physical,materials science
Strain engineering of electronic structure, phonon, and thermoelectric properties of p-type half-Heusler semiconductor

Shakeel Ahmad Khandy,Jeng-Da Chai

DOI: https://doi.org/10.1016/j.jallcom.2020.156615

IF: 6.2

2021-01-01

Journal of Alloys and Compounds

Abstract:We thoroughly inspected the strain induced electronic properties, phonon dynamics and thermoelectric performance of ZrRhSb compound via density functional theory calculations. The optimized lattice parameters are in accord with the experimental observations. The equilibrium lattice constant is utilized to predict the p-type semiconducting and indirect energy gap of 1.15 eV between the X and Γ symmetry points. The application of strain widens the band gap up to 1.5 eV at 10% of compressive strain keeping the indirect nature consistent. Phonon studies display only positive frequencies up to 5% of expansion and 25% of compression and thus confirm the dynamic stability of ZrRhSb under strain. Machineability and elastic properties, evidenced from elastic constants and Pugh's parameter characterize it as a ductile alloy while maintaining its Debye temperature to 333 K. Herein, using ab initio quantum mechanical calculations and Boltzmann theory, optimization of thermoelectric performances in strained and robust ZrRhSb phase was performed. Starting from 300 K, it displays satisfactory thermoelectric performances, namely figure of merit ZT > 0.65 and Seebeck coefficient >190 μV/K. Better performances via strain engineering were obtained at room temperature, where ZT values reach 0.81 with a minimal fluctuation over broad temperature spectrum. The optimal strain conditions are achieved at 10% compression, where the S = 426 μV/K and figure of merit reaches up to a maximum of 0.91 at 800 K, which signifies the possible exploitation of ZrRhSb for thermoelectric applications.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Strain Effects on Thermoelectric Properties of Two-Dimensional Materials

Gang Zhang,Yong-Wei Zhang

DOI: https://doi.org/10.1016/j.mechmat.2015.03.009

IF: 4.137

2015-01-01

Mechanics of Materials

Abstract:Two-dimensional (2D) materials, such as graphene, hexagonal boron nitride (hBN), phosphorene, transition metal dichalcogenides (e.g., MOS2, WS2, etc.), metal oxides (e.g., MoO3) have attracted much attention recently due to their extraordinary structural, mechanical and physical properties. In particular, 2D materials have shown great potential for thermal management and thermoelectric energy generation due to their fascinating electrical and thermal transport properties, which can lead to a significantly large figure-of-merit. Also due to their large stretchability, 2D materials are promising for using strain engineering to tune and modulate their electronic and thermal properties, which can further enhance their figure-of-merit. In this article, we give a review on the recent advances in the study of strain-engineering on the thermoelectric properties of 2D materials. We first review some important aspects in thermoelectric effects, such as Peltier effect, Seebeck effect, the coefficient of performance and figure-of-merit (ZT) and discuss why 2D materials are ideal candidates for thermal management and thermoelectric applications. We then briefly discuss the strain (stress) generation in 2D materials and their structure integrity under strain (stress). Next, we discuss how strain affects the electronic properties of 20 materials, followed by the discussion on the effects of strain on the thermal properties of 2D materials. Subsequently, we discuss the strain effects on two important thermoelectric properties, Seebeck coefficient and figure-of-merit Zr. Finally, we present our conclusions and future perspective. (C) 2015 Elsevier Ltd. All rights reserved.
Enhancement of the electronic thermoelectric properties of bulk strained silicon-germanium alloys using the scattering relaxation times from first principles

F. Murphy-Armando

DOI: https://doi.org/10.1063/1.5117345

2019-11-27

Abstract:We use first-principles electronic structure methods to calculate the electronic thermoelectric properties (i.e. due to electronic transport only) of single-crystalline bulk $n$-type silicon-germanium alloys vs Ge composition, temperature, doping concentration and strain. We find excellent agreement to available experiments for the resistivity, mobility and Seebeck coefficient. These results are combined with the experimental lattice thermal conductivity to calculate the thermoelectric figure of merit $ZT$, finding very good agreement with experiment. We predict that 3% tensile hydrostatic strain enhances the $n$-type $ZT$ by 50% at carrier concentrations of $n=10^{20}$ cm$^{-3}$ and temperature of $T=1200K$. These enhancements occur at different alloy compositions due to different effects: at 50% Ge composition the enhancements are achieved by a strain induced decrease in the Lorenz number, while the power factor remains unchanged. These characteristics are important for highly doped and high temperature materials, in which up to 50% of the heat is carried by electrons. At 70% Ge the increase in $ZT$ is due to a large increase in electrical conductivity produced by populating the high mobility $\Gamma$ conduction band valley, lowered in energy by strain.

Materials Science
Enhanced Thermoelectric Performance of Phosphorene by Strain-Induced Band Convergence

H. Y. Lv,W. J. Lu,D. F. Shao,Y. P. Sun

DOI: https://doi.org/10.1103/physrevb.90.085433

IF: 3.7

2014-01-01

Physical Review B

Abstract:The newly emerging monolayer phosphorene was recently predicted to be a promising thermoelectric material. In this work, we propose to further enhance the thermoelectric performance of phosphorene using the strain-induced band convergence. The effect of the uniaxial strain on the thermoelectric properties of phosphorene was investigated by using the first-principles calculations combined with the semiclassical Boltzmann theory. When the zigzag-direction strain is applied, the Seebeck coefficient and electrical conductivity in the zigzag direction can simultaneously be greatly enhanced at the critical strain of 5%, at which the band convergence is achieved. The largest ZT value of 1.65 at 300 K is then conservatively estimated by using the bulk lattice thermal conductivity. When the armchair-direction strain of 8% is applied, the room-temperature ZT value can reach 2.12 in the armchair direction of phosphorene. Our results indicate that strain-induced band convergence could be an effective method to enhance the thermoelectric performance of phosphorene.
Strain tunable pudding-mold-type band structure and thermoelectric properties of SnP$_3$ monolayer

Shasha Wei,Cong Wang,Guoying Gao

DOI: https://doi.org/10.1063/5.0003241

2019-12-27

Abstract:Recent studies indicated the interesting metal-to-semiconductor transition when layered bulk GeP3 and SnP3 are restricted to the monolayer or bilayer, and SnP3 monolayer has been predicted to possess high carrier mobility and promising thermoelectric performance. Here, we investigate the biaxial strain effect on the electronic and thermoelectric properties of SnP3 monolayer. Our first-principles calculations combined with Boltzmann transport theory indicate that SnP3 monolayer has the pudding-mold-type valence band structure, giving rise to a large p-type Seebeck coefficient and a high p-type power factor. The compressive biaxial strain can decrease the energy gap and result in the metallicity. In contrast, the tensile biaxial strain increases the energy gap, and increases the n-type Seebeck coefficient and decreases the n-type electrical conductivity. Although the lattice thermal conductivity becomes larger at a tensile biaxial strain due to the increased maximum frequency of the acoustic phonon modes and the increased phonon group velocity, it is still low, only e.g. 3.1 W/(mK) at room temperature with the 6% tensile biaxial strain. Therefore, SnP3 monolayer is a good thermoelectric material with low lattice thermal conductivity even at the 6% tensile strain, and the tensile strain is beneficial to the increase of the n-type Seebeck coefficient.

Computational Physics,Materials Science
Optimizing the Thermoelectric Transmission of Monolayer HfSe2 by Strain Engineering

Juan Xiang,Hao Wang,Bo Dai,Wen-Long Cheng,Xiao-Wei Zhang,Zhi-Guo Wang,Ni-Na Ge

DOI: https://doi.org/10.1016/j.jpcs.2022.110834

IF: 4.383

2022-01-01

Journal of Physics and Chemistry of Solids

Abstract:The demand for clean energy is driving enhancements in the efficiency of conversion of thermoelectric materials. The electronic and phononic properties of thermoelectric materials can be adjusted through straining to improve their figure of merit. In this work, the authors systematically examine the effects of biaxial strain on the phononic, electronic, and thermoelectric properties of monolayer 1T-HfSe2 by using first-principles calculations combined with semi-classical Boltzmann transport theory. The results show that the monolayer HfSe2 is a good n-type thermoelectric material. The tensile strain caused the valence band to converge and increased the Seebeck coefficient to induce the transition of HfSe2 from n-type to p-type thermoelectric material. The thermal conductivity kappa(l) of the lattice decreased from 5.54 Wm(-1)kappa(-1) to 1.16 Wm(-1)kappa(-1) at 300 K owing to stronger phonon scattering and lower velocity of the phonon group as the tensile strain increased the bond distance and weakened the bonds. Due to improvements in electrical and thermal transport, ZT(max) significantly increased from 0.16 to 2.41 for the p-type material, and from 0.53 to 1.91 for the n-type material. This shows that strain engineering can improve electrical transport and reduce thermal conductivity to improve thermoelectric performance.
Novel Electro-Strain-effect in La-doped Pb(Zr,Ti)O3 Relaxor Ferroelectrics

L. X. Zhang,X. Ren,Y. Wang,X. Q. Ke,X. D. Ding,J. Sun

DOI: https://doi.org/10.1109/isaf.2009.5307586

2009-01-01

Abstract:Lanthanum doped lead zirconate titanate [(Pb,La)(Zr,Ti)O3] transparent ceramics show relaxor behavior when the content of Lanthanum is 4-14% and molar ratio of Zr/Ti is 65/35. They were known as important electro-optical materials, but few researches had been focused on their electromechanical behavior. In the present work, we report a large recoverable electrostrain of about 0.2% at 1.0 kV/mm in (Pb,La) (Zr,Ti)O3 8/65/35 ceramics. This electro-strain effect is stable over a wide temperature range around its glass transition temperature Tf. In-situ Raman study reveals that the significant strain effect is due to an electric-field-induced reversible transition from a relaxor state to a normal ferroelectric state. A phenomenological explanation based on a revised Laudau theory is given for the origin of the recovery of the initial relaxor state. Such an electro-strain mechanism, being similar to that of the recently-discovered novel superelasticity effect in strain glass system, may provide a novel and general way to achieve ultrahigh electromechanical coupling in relaxor ferroelectrics.
First-Principles Study of Effect of Strain on the Band Structure of Zno Monolayer

Wang Zhi-Gang,Zeng Xiang-Ming,Zhang Yang,Huang Rao,Wen Yu-Hua

DOI: https://doi.org/10.3866/pku.whxb201506301

2015-01-01

Abstract:The effect of strain on the band structure of the ZnO monolayer has been investigated by first-principles calculations based on density functional theory. The results reveal that the band structure of the ZnO monolayer presents different dependences on three types Of strain. The band gap linearly and steeply varies under uniaxial zigzag compressive strain and armchair tensile strain, while it shows nonlinear dependence on the other types of strain. Therefore, uniaxial zigzag compressive strain and armchair tensile strain should be the most effective to tune the band gap. This work has significant implications for application of strain to tune the optical and catalytic properties of ZnO nanofilms.

First-principles study of strain effect on the thermoelectric properties of LaP and LaAs

First-Principles Study of Strain Effect on Thermoelectric Properties of LaP and LaAs

Thermoelectric Properties of Topological Insulator Lanthanum Phosphide Via First-Principles Study

Unravelling the Thermoelectric Properties and Suppression of Bipolar Effect under Strain Engineering for the Asymmetric Janus SnSSe and PbSSe Monolayers

Improving Thermoelectric Performance of Asymmetrical Janus 1T-Snsse Monolayer by the Synergistic Effect of Band Convergence and Crystal Lattice Softening under Strain Engineering

First-principles calculations and high thermoelectric performance of La–Nb doped SrTiO3 ceramics

Enhancing thermoelectric performance of 2D Janus ISbTe by strain engineering: A first principle study

Strain‐induced effects on thermoelectric performance of layered LaCuOSe

Effect of crystal size distribution on thermoelectric performance for Lanthanum-doped strontium titanate bulk material

The Strain-Induced Excellent Thermoelectric Performance of PbTe

The use of strain to tailor electronic thermoelectric transport properties: A first principles study of 2H-phase CuAlO2

Strain Induced Enhancement of Thermoelectric Properties of Monolayer WS2 through Valley Degeneracy

Strain Tunable Thermoelectric Material: Janus ZrSSe Monolayer

Strain engineering of electronic structure, phonon, and thermoelectric properties of p-type half-Heusler semiconductor

Strain Effects on Thermoelectric Properties of Two-Dimensional Materials

Enhancement of the electronic thermoelectric properties of bulk strained silicon-germanium alloys using the scattering relaxation times from first principles

Enhanced Thermoelectric Performance of Phosphorene by Strain-Induced Band Convergence

Strain tunable pudding-mold-type band structure and thermoelectric properties of SnP$_3$ monolayer

Optimizing the Thermoelectric Transmission of Monolayer HfSe2 by Strain Engineering

Novel Electro-Strain-effect in La-doped Pb(Zr,Ti)O3 Relaxor Ferroelectrics

First-Principles Study of Effect of Strain on the Band Structure of Zno Monolayer