Abstract:Plasma-enhanced atomic layer deposition (PE-ALD) is widely employed in microelectronics, energy, and sensing applications. Typically, PE-ALD processes for metal oxides utilize remote inductively coupled plasmas operated at powers of >200 W, ensuring a sufficient flux of oxygen radicals to the growth surface. However, this approach often leads to significant oxidation of chemically sensitive substrates, including most technological semiconductors. Here, we demonstrate that plasma powers as low as 5 W can effectively suppress substrate oxidation while maintaining the structural, optical, and electronic quality of the films. Specifically, we investigate the growth of titanium oxide (TiOx) using two commonly used metalorganic precursors, titanium isopropoxide and tetrakis(dimethylamino)titanium. Films deposited with 5 and 300 W oxygen plasma power are nearly indiscernible from one another, exhibiting significantly lower defect concentrations than those obtained from thermal ALD with H2O. The low plasma power process preserves desired physical characteristics of PE-ALD films, including large optical constants (n > 2.45 at 589 nm), negligible defect-induced sub-bandgap optical absorption (α < 102 cm−1), and high electrical resistivity (>105 Ω cm). Similar behavior, including suppressed interface oxidation and low defect content, is observed on both Si and InP substrates. As an example application of this approach, the assessment of InP/TiOx photocathodes and Si/TiOx photoanodes reveals a significant improvement in the photocurrent onset potential in both cases, enabled by suppressed substrate oxidation during low power PE-ALD. Overall, low power PE-ALD represents a generally applicable strategy for producing high quality metal oxide thin films while minimizing detrimental substrate reactions.

Low temperature atomic layer deposition of PbO 2 for electrochemical applications

Effect of the Current Density on Electrodepositing Alpha-Lead Dioxide Coating on Aluminum Substrate

Fabrication and Electrochemical Treatment Application of an Al-Doped PbO2 Electrode with High Oxidation Capability, Oxygen Evolution Potential and Reusability

Preparation And Characterization Of Pbo2 On Aluminum Substrate

ALD grown zinc oxide with controllable electrical properties

Pd Nanoparticles on Zno-Passivated Porous Carbon by Atomic Layer Deposition: an Effective Electrochemical Catalyst for Li-O-2 Battery

Atomic Layer Deposition for Lithium‐Based Batteries

Synthesis Of Porous Carbon Supported Palladium Nanoparticle Catalysts By Atomic Layer Deposition: Application For Rechargeable Lithium-O-2 Battery

Quick Fabrication of Evenly Porous PbO2 Through Potential Linear Increase Electrodeposition

Quick fabrication of evenly porous PbO 2 through potential linear increase electrodeposition

Suppressing substrate oxidation during plasma-enhanced atomic layer deposition on semiconductor surfaces

The Mechanisms for the Growth of the Anodic Pb(II) Oxides Films Formed on Pb–Sb and Pb–Sn Alloys in Sulfuric Acid Solution

Effects of Fatty Alcohol Polyoxyethylene Ether AEO on PbO2Structure and Electrodeposition Behavior

Constructing Conductive MoOx Thin Films by Plasma Enhanced Atomic Layer Deposition

Zinc Oxide Grown by Atomic Layer Deposition: From Heavily n‐Type to p‐Type Material

Atomic Layer Deposition of Al2O3 on LiNi0.68Co0.10Mn0.22O2 for Enhanced Electrochemical Performance

Atomic Layer Deposition for Electrochemical Energy: from Design to Industrialization

Atomic layer deposition for tuning the surface chemical composition of nickel iron phosphates for oxygen evolution reaction in alkaline electrolyzers

Use Of Electrochemical Measurements To Investigate The Porosity Of Ultra-Thin Al2o3 Films Prepared By Atomic Layer Deposition

Advanced TiO 2 /Al 2 O 3 Bilayer ALD Coatings for Improved Lithium-Rich Layered Oxide Electrodes

Stabilized PbO2 Electrode Prepared Via Crystal Facet Controlling for Outstanding Degradation of MePB