Abstract:Because of its atomic thickness, excellent properties, and widespread applications, graphene is regarded as one of the most promising candidate materials for nanoelectronics. The wider use of graphene will require processes that produce this material in a controllable manner. In this Account, we focus on our recent studies of the controllable chemical vapor deposition (CVD) growth of graphene, especially few-layer graphene (FLG), and the applications of this material in electronic devices. CVD provides various means of control over the morphologies of the produced graph ene. We studied several variables that can affect the CVD growth of graphene, including the catalyst, gas flow rate, growth time, and growth temperature and successfully achieved the controlled growth of hexagonal graphene crystals. Moreover, we developed several modified CVD methods for the controlled growth of FLGs. Patterned CVD produced FLGs with desired shapes in required areas. By introducing dopant precursor in the CVD process, we produced substitutionally doped FLGs, avoiding the typically complicated post-treatment processes for graphene doping. We developed a template CVD method to produce FLG ribbons with controllable morphologies on a large scale. An oxidation-activated surface facilitated the CVD growth of polycrystalline graphene without the use of a metal catalyst or a complicated postgrowth transfer process. In devices, CVD offers a controllable means to modulate the electronic properties of the graphene samples and to improve device performance. Using CVD-grown hexagonal graphene crystals as the channel materials in field-effect transistors (FETs), we improved carrier mobility. Substitutional doping of graphene in CVD opened a band gap for efficient FET operation and modulated the Fermi energy level for n-type or p-type features. The similarity between the chemical structure of graphene and organic semiconductors suggests potential applications of graphene in organic devices. We used patterned CVD FLGs as the bottom electrodes in pentacene FETs. The strong π-π interactions between graphene and pentacene produced an excellent interface with low contact resistance and a reduced injection barrier, which dramatically enhances the device performance. We also fabricated reversible nanoelectromechanical (NEM) switches and a logic gate using the FLG ribbons produced using our template CVD method. In summary, CVD provides a controllable means to produce graphene samples with both large area and high quality. We developed several modified CVD methods to produce FLG samples with controlled shape, location, edge, layer, dopant, and growth substrate. As a result, we can modulate the properties of FLGs, which provides materials that could be used in FETs, OFETs, and NEM devices. Despite remarkable advances in this field, further exploration is required to produce consistent, homogeneous graphene samples with single layer, single crystal, and large area for graphene-based electronics.

Chemical vapor deposition of graphene and its characterizations and applications

Chemical Vapour Deposition of Graphene—Synthesis, Characterisation, and Applications: A Review

Chemical vapor deposition-grown nitrogen-doped graphene’s synthesis, characterization and applications

Chemical vapor deposited graphene: From synthesis to applications

Review of Chemical Vapor Deposition of Graphene and Related Applications

Graphene Transfer: Paving the Road for Applications of Chemical Vapor Deposition Graphene

Synthesis Of Doped Porous 3d Graphene Structures By Chemical Vapor Deposition And Its Applications

Recent Understanding in the Chemical Vapor Deposition of Multilayer Graphene: Controlling Uniformity, Thickness, and Stacking Configuration

Achievements and Challenges of Graphene Chemical Vapor Deposition Growth

Controllable Chemical Vapor Deposition Growth of Few Layer Graphene for Electronic Devices.

Bridging the Gap between Reality and Ideal in Chemical Vapor Deposition Growth of Graphene

Chemical vapor deposition (CVD) growth of graphene films

Quasistatic Equilibrium Chemical Vapor Deposition of Graphene

Surface Engineering of Substrates for Chemical Vapor Deposition Growth of Graphene and Applications in Electronic and Spintronic Devices

In Situ Investigating the Mechanism of Graphene Growth by Chemical Vapor Deposition

Chemical Vapor Deposition Method for Graphene Fiber Materials

Engineering of Chemical Vapor Deposition Graphene Layers: Growth, Characterization, and Properties

Effect of Gas-Phase Reaction on the CVD Growth of Graphene

Kinetics of Graphene and 2D Materials Growth

Theoretical Study of Chemical Vapor Deposition Synthesis of Graphene and Beyond: Challenges and Perspectives.

Toward the commercialization of chemical vapor deposition graphene films