Occurrence and solution to overcome 1st RESET resistance pinning effect in Ti/HfOx based RRAM for low power nonvolatile memory applications

S. Z. Rahaman,Heng-Yuan Lee,Yu-De Lin,Chien-Hua Hsu,K. Tsai,Weisu Chen,Yu-Sheng Chen,Pang-Shiu Chen,Pei-Hua Wang
DOI: https://doi.org/10.1109/VLSI-TSA.2017.7942471
2017-04-01
Abstract:In summary, we have optimized the operation current to obtain stable endurance and retention properties in Ti/HfOx based bipolar RRAM for future low power nonvolatile memory applications. Furthermore, the 1st RESET resistance pinning effect after the FORMING process at lower current is greatly improved by selecting the Ti/HfOx thickness ratio in TiN/Ti/HfOx/TiN 1T1R RRAM. Thus, in order to achieve the reliable switching at low operation current, the design of the memory element is crucial.
What problem does this paper attempt to address?