Simulations of Schottky-barrier nanowire field effect transistors

Jaehyun Lee,C. Ahn,M. Shin
DOI: https://doi.org/10.1109/NMDC.2006.4388898
2006-10-01
Abstract:Quantum simulations of Schottky-barrier silicon nanowire field effect transistors and carbon nanotube field effect transistors have been carried out by solving the Poisson's equation and non-equilibrium Green's function self-consistently and their device characteristics are investigated.
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