Abstract:Single-Dirac-cone topological insulators (TI) are the first experimentally discovered class of three dimensional topologically ordered electronic systems, and feature robust, massless spin-helical conducting surface states that appear at any interface between a topological insulator and normal matter that lacks the topological insulator ordering. This topologically defined surface environment has been theoretically identified as a promising platform for observing a wide range of new physical phenomena, and possesses ideal properties for advanced electronics such as spin-polarized conductivity and suppressed scattering. A key missing step in enabling these applications is to understand how topologically ordered electrons respond to the interfaces and surface structures that constitute a device. Here we explore this question by using the surface deposition of cathode (Cu/In/Fe) and anode materials (NO$_2$) and control of bulk doping in Bi$_2$Se$_3$ from P-type to N-type charge transport regimes to generate a range of topological insulator interface scenarios that are fundamental to device development. The interplay of conventional semiconductor junction physics and three dimensional topological electronic order is observed to generate novel junction behaviors that go beyond the doped-insulator paradigm of conventional semiconductor devices and greatly alter the known spin-orbit interface phenomenon of Rashba splitting. Our measurements for the first time reveal new classes of diode-like configurations that can create a gap in the interface electron density near a topological Dirac point and systematically modify the topological surface state Dirac velocity, allowing far reaching control of spin-textured helical Dirac electrons inside the interface and creating advantages for TI superconductors as a Majorana fermion platform over spin-orbit semiconductors.

Atomically Abrupt Topological p-n Junction

Electrically Tunable Wafer-Sized Three-Dimensional Topological Insulator Thin Films Grown by Magnetron Sputtering

Three-dimensional Photonic Topological Insulator Without Spin–orbit Coupling

Artificial Topological Superconductor by the Proximity Effect

Electron dynamics in topological insulator semiconductor-metal interfaces (topological pn interface)

Electron dynamics in topological insulator based semiconductor-metal interfaces (topological p-n interface based on Bi2Se3 class)

Robust topological interface states in a lateral magnetic-topological heterostructure

Single-Electron Transistor Made of a 3D Topological Insulator Nanoplate

Electron behavior in topological insulator based P-N overlayer interfaces

Topological Properties Determined by Atomic Buckling in Self-Assembled Ultrathin Bi(110)

Topological columnar nano-SQUID based on a 3D topological insulator

A realistic topological p–n junction at the Bi2Se3 (0001) surface based on planar twin boundary defects

Topological Phase Transitions in a Hybridized Three-Dimensional Topological Insulator

A Single‐Electron Transistor Made of a 3D Topological Insulator Nanoplate

Inducing Quantum Phase Transitions in Non-Topological Insulators Via Atomic Control of Sub-Structural Elements

Few-layer Nanoplates of Bi 2 Se 3 and Bi 2 Te 3 with Highly Tunable Chemical Potential.

Double-sided van der Waals epitaxy of topological insulators across an atomically thin membrane

Controlling and distinguishing electronic transport of topological and trivial surface states in a topological insulator

Few-layer Nanoplates of Bi2Se3 and Bi2Te3 with Highly Tunable Chemical Potential

Lattice-matched heterojunctions between topological and normal insulators: A first-principles study

Direct atom-by-atom chemical identification of nanostructures and defects of topological insulators.