Abstract:Topological insulators (TIs) are bulk insulators with unusual gapless metallic surface states protected by time reversal symmetry. The topological surface states are expected to yield unique phenomena, such as spin-momentum locking and the suppression of non-magnetic backscattering. The surface states with a Dirac cone like dispersion relation have been observed directly using Angle-resolved photoemission spectroscopy (ARPES). Their signatures in electrical transport properties have also been reported although the transport behaviors are complicated by the fact that the samples often have dominating conduction from bulk channels due to high carriers density from impurity states. It is theoretically predicted that the surface states are robust against strong disorders, but it has not been tested experimentally. Bi2Te3, a member of the Bi2Se3 family, has been demonstrated to be a promising candidate of 3D topological insulators. In this work, various transport studies have been carried out on Bi2Te3 nanotubes with strong disorders. As essentially narrow gap semiconductors with band gaps of 100 to 300 meV, the Bi2Se3 family often have conducting bulk due to impurity doping and lattice imperfection, such as vacancies, dislocations, and defects. Several approaches have been applied to reduce bulk conductivity. The first one is to compensate bulk carriers by chemical doping or field effect, which drags Fermi level back to bang gap. Another is to fabricate nano-scale samples with enhanced surface-to-volume ratio, and effectively reduce the weight of bulk conduction. In our work we have prepared Bi2Te3 nanotubes by solution phase method utilizing Kirkendall effect. Due to the nature of this process, polycrystalline Bi2Te3 nanotubes form with extremely strong disorders. In this way, bulk carriers are strongly localized and the samples are brought from a heavily doped band semiconductor to the regime of Anderson insulator. We have demonstrated that the bulk conductance of the nanotubes is truly insulating and characterized by Mott Variable Range Hopping (VRH) mechanism. Despite the strongly disordered bulk channel, Aharonov-Bohm (AB) like oscillations in magnetoconductance have been observed on the nanotubes at low temperatures. The conductance oscillations differ from those on either ballistic or diffusive normal metals. With the combination of theoretical analysis and simulations, we show that these oscillations originate from the outer surface states of the nanotubes. Their behaviors are consistent with the prediction of the “anomalous AB effect” of topological surface states. In comparison with published work on clean TIs, we provide a direct demonstration of the fundamental aspect of topological surface states, namely their robustness to time-reversal invariant disorder. The interplay between a TI and a superconductor (SC) is another interesting topic to explore the exotic behaviors of topological surface states. For example, proximity induced superconductivity on topological insulators leads to the new phase of…

Topological columnar nano-SQUID based on a 3D topological insulator

Experimental realization of SQUIDs with topological insulator junctions

Artificial Topological Superconductor by the Proximity Effect

Superconducting Quantum Interference Devices Made of Sb-doped Bi2Se3 Topological Insulator Nanoribbons

Observation of Topological Surface State Quantum Hall Effect in an Intrinsic Three-Dimensional Topological Insulator

Aharonov-Bohm Oscillations in a Quasi-Ballistic 3D Topological Insulator Nanowire

Electrostatic environment and Majorana bound states in full-shell topological insulator nanowires

Single-Electron Transistor Made of a 3D Topological Insulator Nanoplate

Electrical Transport Studies Of Topological Insulator Bi2te3 Nanotubes

Magnetoconductance, Quantum Hall Effect, and Coulomb Blockade in Topological Insulator Nanocones

Topological superconductor from superconducting topological surface states and fault-tolerant quantum computing

Three-Dimensional Quantum Anomalous Hall Effect in Magnetic Topological Insulator Trilayers of Hundred-Nanometer Thickness

Gate-switchable SQUID Based on Dirac Semimetal Cd3As2 Nanowires

Integration of Topological Insulator Josephson Junctions in Superconducting Qubit Circuits

Emergent helical edge states in a hybridized three-dimensional topological insulator

Magnetically Confined States and Transport Property on the Surface of a Topological Insulator

Topological Phase Transitions in a Hybridized Three-Dimensional Topological Insulator

Spin transport properties in a topological insulator sandwiched between two-dimensional magnetic layers

A Single‐Electron Transistor Made of a 3D Topological Insulator Nanoplate

One-dimensional helical transport in topological insulator nanowire interferometers

Robust gap closing and reopening in topological-insulator Josephson junctions