Thermoelectric La-doped SrTiO3 epitaxial layers with single-crystal quality: from nano to micrometers

Mihai Apreutesei,Régis Debord,Mohamed Bouras,Philippe Regreny,Claude Botella,Aziz Benamrouche,Adrian Carretero-Genevrier,Jaume Gazquez,Geneviève Grenet,Stéphane Pailhès,Guillaume Saint-Girons,Romain Bachelet
DOI: https://doi.org/10.1080/14686996.2017.1336055
2017-06-20
Abstract:High-quality thermoelectric La0.2Sr0.8TiO3 (LSTO) films, with thicknesses ranging from 20 nm to 0.7 μm, have been epitaxially grown on SrTiO3(001) substrates by enhanced solid-source oxide molecular-beam epitaxy. All films are atomically flat (with rms roughness < 0.2 nm), with low mosaicity (<0.1°), and present very low electrical resistivity (<5 × 10-4 Ω cm at room temperature), one order of magnitude lower than standard commercial Nb-doped SrTiO3 single-crystalline substrate. The conservation of transport properties within this thickness range has been confirmed by thermoelectric measurements where Seebeck coefficients of approximately -60 μV/K have been recorded for all films. These LSTO films can be integrated on Si for non-volatile memory structures or opto-microelectronic devices, functioning as transparent conductors or thermoelectric elements.
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