Abstract:A dicing process that combines the laser scribing and mechanical breaking procedures is demonstrated to achieve high-quality n -type 4 H-silicon carbide (SiC) without generating the edge defect and chipping phenomenon. Presented dicing process is successfully implemented on a 40 mm × 40 mm SiC workpiece with a thickness of 150 μm, and it separated 1 mm × 1 mm and 2 mm × 2 mm chips. However, the process-induced stress introduces stress-induced amorphization into the cut cross section of fabricated SiC. Moreover, vertical thermal cracking is found on the periodic tip region treated with laser scribing. To investigate the influence of stress-induced damage on mechanical characteristics of fabricated SiC, the nanoindentation technique is utilized to identify modulus gradient and mapping behavior. Analysis results reveal that damage-induced degradation on modulus behavior is observed from the edge of the periodic tip region to the hinterland region, which the measured reduced modulus results of aforementioned regions are 325.87±56.21 and 284.85±30.02 GPa, respectively. Moreover, the thickness of the damaged layer that covers the cut cross section is estimated to be at least 150 nm by utilizing continuous stiffness measurement (CSM) nanoindentation. The modulus mapping characteristics on the molten and unmolten regions are within the range of 90–160 GPa and 180–300 GPa, respectively. The composition of molten region is investigated by the EDS analysis and the corresponding reduced modulus results is revealed as 105.86±16.46 GPa.

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Atomistic Investigations of Single-Crystal Silicon with Pre-Existing Defects

Measurement of Sub-Surface Microstructures Based on a Developed Ultrasonic Atomic Force Microscopy

Study of Local Stress Using Stress-Absorbing Si Diaphragm

Investigation of interfacial matching between 3C-SiC substrate crystals and its surface layer deposited Cu elements using molecular dynamics simulations

Subatomic Imaging of Si (001) Surface by Molecular Dynamic Simulation

Study of the deposition of nanopillar-patterned 4H-SiC by molecular dynamics simulation

Atomic scale imaging of monocrystalline Si （001） surface by molecular dynamic simulation

Deep Investigation of Two-Dimensional Structure Arrays Formed on Si Surface

Nanoindentation and Deformation Behaviors of Silicon Covered with Amorphous SiO2: a Molecular Dynamic Study

Study of Femtosecond Laser Ablation Effect on Micro-Processing for 4H-SiC Substrate

Lattice Defects Distribution of H+ Implanted 4H-Sic Investigated by Deep-Ultraviolet Raman Spectroscopy

Investigation of Material Removal Mechanism of Silicon Wafer in the Chemical Mechanical Polishing Process Using Molecular Dynamics Simulation Method

Probing lattice vibration at surface and interface of SiO$_2$/Si with nanometer resolution.

Unprecedented atomic surface of silicon induced by environmentally friendly chemical mechanical polishing

Investigation of process-induced periodic structure on n -type 4H-SiC with corresponding mechanical characteristics estimation

Nanoscale Quantification of Charge Injection and Transportation Process in Si-nanocrystal Based Sandwiched Structure.

Nano-Structured Silicon: Fabrication, Optical Property, Defect States and Device Application

Modification Mechanism of Collaborative Ions Implanted into 4H-Sic by Atomic Simulation and Experiment

Microscopic Observation of Lateral and Vertical Charge Transportation in Si Nanocrystals Sandwiched by Amorphous SiC Layers

Mechanical Load-Induced Atomic-Scale Deformation Evolution and Mechanism of SiC Polytypes Using Molecular Dynamics Simulation