Abstract:Memristive devices have been explored as electronic synaptic devices to mimic biological synapses for developing hardware-based neuromorphic computing systems. However, typical oxide memristive devices suffered from abrupt switching between high and low resistance states, which limits access to achieve various conductance states for analog synaptic devices. Here, we proposed an oxide/suboxide hafnium oxide bilayer memristive device by altering oxygen stoichiometry to demonstrate analog filamentary switching behavior. The bilayer device with Ti/HfO2/HfO2-x(oxygen-deficient)/Pt structure exhibited analog conductance states under a low voltage operation through controlling filament geometry as well as superior retention and endurance characteristics thanks to the robust nature of filament. A narrow cycle-to-cycle and device-to-device distribution were also demonstrated by the filament confinement in a limited region. The different concentrations of oxygen vacancies at each layer played a significant role in switching phenomena, as confirmed through X-ray photoelectron spectroscopy analysis. The analog weight update characteristics were found to strongly depend on the various conditions of voltage pulse parameters including its amplitude, width, and interval time. In particular, linear and symmetric weight updates for accurate learning and pattern recognition could be achieved by adopting incremental step pulse programming (ISPP) operation scheme which rendered a high-resolution dynamic range with linear and symmetry weight updates as a consequence of precisely controlled filament geometry. A two-layer perceptron neural network simulation with HfO2/HfO2-x synapses provided an 80% recognition accuracy for handwritten digits. The development of oxide/suboxide hafnium oxide memristive devices has the capacity to drive forward the development of efficient neuromorphic computing systems.

A Bias‐Dependent Weight Update Characteristics of Low Power Synaptic Pass‐Transistors with a Hf‐Doped ZnO Channel Layer

Reverse Charge Injection Dual-Gate Synaptic Transistors for Effective Weight Update

Sub-Boltzmann Switching, Hysteresis-Free Charge Modulated Negative Differential Resistance FinFET

The Influence of the Hafnium Doping on Negative Bias Stability in Zinc Oxide Thin Film Transistor

Electret/High-<i>k</i> Solution Dielectric for Low Voltage Synaptic Transistors With Near Linear and Ambipolar Weight Update

Incremental Drain-Voltage-Ramping Training Method for Ferroelectric Field-Effect Transistor Synaptic Devices

Electret/High-k Solution Dielectric for Low Voltage Synaptic Transistors With Near Linear and Ambipolar Weight Update

MoS 2 Synaptic Transistor with Tunable Weight Profile

A synapse with low power consumption based on MoTe 2 /SnS 2 heterostructure

Energy-efficient transistors: suppressing the subthreshold swing below the physical limit

Bias-independent subthreshold swing in ballistic cold-source field-effect transistors by drain density-of-states engineering

Thickness-controlled black phosphorus tunnel field-effect transistor for low-power switches

Microfluidic Shearing Regulated in Spin-Coated Dielectrics for Ultra-Low Voltage and High-Performance Synaptic Transistors

A Physical Model for Metal–Oxide Thin-Film Transistor under Gate-Bias and Illumination Stress

Effect of nitrogen-doping on drain current modulation characteristics of an indium-gallium-zinc oxide thin-film transistor

On the Reliability of an InGaZnO Thin-Film Transistor under Negative Bias Illumination Stress

Optimization of post-annealing temperature for high-performance synaptic transistors based on In–Ga–Zn–O channel and trap layers

Improvement of the Symmetry and Linearity of Synaptic Weight Update by Combining the InGaZnO Synaptic Transistor and Memristor

Enhanced linear and symmetric synaptic weight update characteristics in a Pt/p-LiCoOx/p-NiO/Pt memristor through interface energy barrier modulation by Li ion redistribution

Linear and symmetric synaptic weight update characteristics by controlling filament geometry in oxide/suboxide HfOx bilayer memristive device for neuromorphic computing

Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors