Abstract:An efficient dendrite‐function‐like negative‐differential‐resistance (NDR) neuron is proposed for the first time. By co‐integrating electrochemicalrandom‐access memory (ECRAM) and ionic regulation, the non‐ideality of devicesis mitigated and it can also be trained to enhance neural network performancefor edge learning. Finally, the NDR neuron can work synergistically with 1T1R arrays to achieve full hardware implementation of neural networks. Computing‐in‐memory (CIM) architecture inspired by the hierarchy of human brain is proposed to resolve the von Neumann bottleneck and boost acceleration of artificial intelligence. Whereas remarkable progress has been achieved for CIM, making further improvements in CIM performance is becoming increasingly challenging, which is mainly caused by the disparity between rapid evolution of synaptic arrays and relatively slow progress in building efficient neuronal devices. Specifically, dedicated efforts are required toward developments of more advanced activation units in terms of both optimized algorithms and innovative hardware implementations. Here a novel bio‐inspired dendrite function‐like neuron based on negative‐differential‐resistance (NDR) behavior is reported and experimentally demonstrates this design as a more efficient neuron. By integrating electrochemical random‐access memory (ECRAM) with ionic regulation, the tunable NDR neuron can be trained to enhance neural network performances. Furthermore, based on a high‐density RRAM chip, fully hardware implementation of CIM is experimentally demonstrated by integrating NDR neuron devices with only a 1.03% accuracy loss. This work provides 516 × and 1.3 × 105 × improvements on LAE (Latency‐Area‐Energy) property, compared to the digital and analog CMOS activation circuits, respectively. With device‐algorithm co‐optimization, this work proposes a compact and energy‐efficient solution that pushes CIM‐based neuromorphic computing into a new paradigm.

The Origin of CBRAM With High Linearity, On/Off Ratio, and State Number for Neuromorphic Computing

An 8-Bit in Resistive Memory Computing Core with Regulated Passive Neuron and Bitline Weight Mapping

BRoCoM: A Bayesian Framework for Robust Computing on Memristor Crossbar.

Lower Power, Better Uniformity, and Stability CBRAM Enabled by Graphene Nanohole Interface Engineering

Circuit Modeling for RRAM-Based Neuromorphic Chip Crossbar Array with and Without Write-Verify Scheme.

Effect of conductance linearity of Ag-chalcogenide CBRAM synaptic devices on the pattern recognition accuracy of an analog neural training accelerator

Device and circuit optimization of RRAM for neuromorphic computing

Hardware Implementation Of Rram Based Binarized Neural Networks

Optimized Programming Scheme Enabling Symmetric Conductance Modulation in HfO₂ Resistive Random-Access Memory (RRAM) for Neuromorphic Systems

Impact of the Interconnection Structure on RRAM-Based Crossbar Array in Neuromorphic Chip

Fully Hardware Memristive Neuromorphic Computing Enabled by the Integration of Trainable Dendritic Neurons and High‐Density RRAM Chip

Neuroinspired unsupervised learning and pruning with subquantum CBRAM arrays

Modeling of Gate Tunable Synaptic Device for Neuromorphic Applications

Enabling RRAM-Based Brain-Inspired Computation by Co-design of Device, Circuit, and System

Improvement of State Stability in Multi-Level Resistive Random-Access Memory (RRAM) Array for Neuromorphic Computing

Novel Three-Dimensional Artificial Neural Network Based on an Eight-Layer Vertical Memristor with an Ultrahigh Rectify Ratio (>107) and an Ultrahigh Nonlinearity (>105) for Neuromorphic Computing.

A Hardware Neural Network for Handwritten Digits Recognition Using Binary RRAM As Synaptic Weight Element

Binary Neural Network with 16 Mb Rram Macro Chip for Classification and Online Training

Investigation of Non-Linear Selection Effect on RRAM Based Neuromorphic Computing Array with Passive Selective Element

Intra-array Non-Idealities Modeling and Algorithm Optimization for RRAM-based Computing-in-Memory Applications

33.1 A 74 TMACS/W CMOS-RRAM Neurosynaptic Core with Dynamically Reconfigurable Dataflow and In-situ Transposable Weights for Probabilistic Graphical Models.